• 专利附录
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    • 专利摘要:
    The invention relates to an apparatus for magnetic resonance spectroscopy or tomography with a magnet (20) for generating a magnetic field in the direction of a z-axis in a working volume arranged on the z-axis by z = 0 and a cryogenic MR receiving (FIG. 29) and / or MR transmission device (24) with an electronic circuit having one or more semiconductor components (10), wherein the apparatus is set to an operating temperature below 100 K and a magnetic field B 0 of at least 1 T in the MR apparatus produce. At least one semiconductor junction of at least one of the semiconductor components (10) of the electronic circuit is arranged so that the average direction of movement of the charge carriers in the semiconductor junction is substantially parallel to the magnetic field lines of the magnetic field B 0, wherein the corresponding semiconductor component (10) is mounted directly on a carrier ( 12) is arranged, which is constructed of a material with good thermal conductivity properties. This ensures an unadulterated characteristic of the semiconductor components used despite the very strong magnetic field and the low operating temperatures. The invention further relates to a use of an electronic circuit in the MR apparatus.
    公开号:CH707283B1
    申请号:CH01880/13
    申请日:2013-11-11
    公开日:2017-09-29
    发明作者:Schwilch Arthur；Daniel Marek Dr；Luke Martin
    申请人:Bruker Biospin Ag；
    IPC主号:
    专利说明:

    The invention relates to an apparatus for magnetic resonance spectroscopy or tomography with a magnet for generating a magnetic field in the direction of a z-axis in a z-axis arranged on the z-axis and a cryogenic MR receiving and / or MR transmission device with an electronic circuit having one or more semiconductor components, wherein the apparatus is adapted to generate an operating temperature below 100 K and a magnetic field B0 of at least 1 T in the MR apparatus.
    Such an arrangement is known from Wosik J, Nesteruk K, Camel MR, Ip F, Xue L, Wright AC, Wehrli FW, Cryogenic Varactor-Tuned 4-element Array and Cryostat for μ-MRI of Trabecular Bone in the Distal Tibia, Proc. Inti. Soc. Mag. Reson. Med, 16 (2008) (= reference [11]).
    Introduction [0003] In NMR (= nuclear magnetic resonance), in particular MRI (= Magnetic Resonance Imaging), cryogenically cooled receiving systems can be used to increase the sensitivity for receiving the high-frequency signals. For this purpose, cooled coil arrangements are used.
    Such is shown for MRI in Fig. 2. A magnet 20 with the magnetic field B0 is located in a Dewar 21. In the room temperature bore 23 of the magnet 20 is the shim and gradient system 22 and the transmitting and receiving device. In the example shown, this consists of a transmitting coil 24, which is realized here as a volume coil which generates an excitation high-frequency field B1, and of a receiving coil 25. The volume coil is also often referred to in the literature as a volume resonator. The receiving coil 25 is advantageously designed as a surface coil. The transmitting coil 24 is normally at room temperature, but could also be cooled.
    The cryogenic receiving device 29 includes the receiving coil 25 with associated electronic circuit 28, which in turn consists of a tune / match / detune circuit 26 and an advantageously also cooled preamplifier 27. By "tune / match" circuit is meant a circuit that accomplishes the impedance matching of the receiver coil to the preamplifier at the operating frequency (NMR resonant frequency). This is necessary to achieve an optimum signal-to-noise ratio and also common practice. The tune / match circuit is often considered separately in function. Details of the «Detune» circuit are discussed below.
    The cooling of the cryogenic receiving device 29 can be accomplished in various ways, e.g. by a cryogenic closed circuit by means of a cooler 30, or by immersing the receiving coil 25 and at least parts of the electronic circuit 28 in liquid nitrogen. The cooled receiver coil 25 is arranged in the immediate vicinity of the sample 31, which is usually at room temperature. The transmitter coil 24 is driven in the example shown by the transmitter TX to generate the excitation field B1. The signal from the preamplifier 27 is fed to the receiver RX, which ultimately digitizes the signals. Transmitter TX and receiver RX are connected to MRI electronics 32, which contains the remaining components for operation.
    In the above example, only a single receiving coil 25 is shown in modern MRI systems usually not only one, but several parallel-operated receiver coils are used ("receive-only coil arrays") [1], [2]. Each of these is then connected to its associated electronic circuit (28) and a corresponding downstream receiver RX. It is also possible to first combine the signals from several receiver coils and then route them together to a receiver.
    Arrangements are also conceivable (and common in high-resolution NMR) in which one or more of the receiving coils are also used for transmission. For this purpose, an electronic switching element (TX / RX switch) is connected at a suitable location between the receiving coil 25 and the preamplifier 27, which can switch the receiving coil in the transmission case to the transmitter TX. Such arrangements can be used in the form of TX / RX single coils, TX / RX arrays as well as combinations of TX / RX coils for different frequencies (nuclei) in MRI as well as NMR (not shown). In such arrangements, the switching element should advantageously also be operated in the magnetic field B0 within the room temperature bore 23 in order to minimize the losses to the preamplifier.
    Application Requirements The goal of such arrangements with a cryogenically cooled receiving system is to achieve the greatest possible signal-to-noise ratio, but this as far as possible without impairing or restricting any other properties of the system. Here are the key points to be met by the application: 1. To minimize the noise of the receiver coil itself, it is cooled and made of good electrically conductive metals or superconducting materials.
    2. In addition, it must be ensured that the additional noise of the downstream electronic circuit 28 is minimized.
    [0012] 3. In the MRI systems, there is a further requirement: The receiving coil must be sufficiently decoupled from the transmitting coil, because the transmitting B1 of the transmitting coil and thus the excitation in the sample may by the presence of the receiving coil (in the Reception case to the same NMR resonance frequency as the transmitter coil is tuned) are not affected in order to avoid artifacts by an inhomogeneous excitation. The interaction of the receiving coil with the B1 field of the transmitting coil must not lead to any damage or destruction of the receiving coil itself or other components. The decoupling can be realized according to the prior art in that the receiving coil is deactivated in the transmission case.
    This deactivation is necessary for a geometry optimizing the measurement results in a general arrangement and any orientation of the receiver coils (compared to the sample and thus also with respect to the transmitter coil), be it in the case of individual coils or in particular of arrays. Only with a single receiving coil or receiving coil arrangements in which the enclosed surfaces of all receiving coils are oriented exactly parallel to the B1 magnetic field of the transmitting coil, such an interaction can be minimized ("geometric decoupling"), since then resulting from B1 magnetic flux in the receiving coil is zero and therefore no voltage is induced and thus no induced current in the or the receiving coil (s) can flow. However, even with a somewhat more general arrangement of several receiving coils, there are always receiving coils which couple to the B1 field of the transmitting coil. In modern devices, in particular, so-called quadrature Sen coils are used (which generate a B1 rotating field, wherein the B1 vector rotates about the axis, which is given by the B0, with the NMR frequency, corresponding to a 90 degrees phase-shifted superposition of two perpendicular to the magnetic field B0 linearly polarized B1 field components). This rotating field (or at least one of the linear B1 components) then generally couples to each receiving coil. Flier it is no longer possible to decouple all receiving coils geometrically from the transmitting coil.
    4. The cryogenic receiving device must not generate any further artifacts, e.g. in the form of B0 field interference in the region of the sample caused by magnetizable materials, in particular from the receiver coils themselves as well as from the electronic components of the electronic circuit. Magnetizable materials are understood to mean those having a high magnetic susceptibility over 10-3 volume susceptibility MKS, in particular ferromagnetic materials such as iron, nickel and cobalt.
    Requirements for Implementation The following are the most important points to be met in a concrete implementation: 1. In the approach of cooled receiver coils considered here, in which the thermal noise is reduced and, depending on the technology, also a reduced FIF Resistance, it is advantageous that the downstream electronic circuit is also cryogenically cooled in order to minimize additional noise, in particular should also be cooled in preamplifier in cryogenic receiving coils. It is advantageous if the preamplifier is as close as possible to the receiving coil in order to minimize losses through the lines.
    2. The cooling system must be able to keep all cooled components (receiving coil, lines, electronic circuit) at the intended temperature, and this in turn without causing any further disturbances or instabilities.
    3. The materials and components used must not be magnetizable, so as not to cause disturbances of the static magnetic field B0 in the sample, which can lead to coarse Messartefakten or even signal cancellations.
    4. In order to ensure the above-discussed decoupling of the receiving coil from the transmitting coil, an additional functionality is required to disable the receiving coil during the transmission process. (This is accomplished in practice by effectively opening / interrupting the coil current path so that no induced current flows through the receiving coil. [1] The term "detuning" is also often used in the literature for this process.) For this deactivation The receiver coils require additional electronics. This should now be very close to the receiving coil to minimize RF losses and associated additional noise, since this circuit is a part of the receiving coil, because through this circuit as well as through the associated connecting lines to the receiving coil in the receiving case, the entire resonant coil current flows.
    5. The above requirements call for a high signal strength (since they have to withstand the i.a high power of the transmitting coil, which moves in the order of kW), cooled electronics in the immediate vicinity of the coil and thus in the magnetic field.
    Flat Conductor Effects In the case of cryogenically cooled NMR / MRI systems, it is generally the case that semiconductors are operated in a strong magnetic field at low temperatures and with good cooling, and the components must not be magnetizable. These semiconductor components are, for example, RF switching (PIN), RF limiter, varactor diodes or active elements such as field-effect transistors. All of these can occur in different semiconductor technologies.
    The simplest case is shown in Fig. 3. It is a planar diode with the negative and positive doped regions (n, p). When an electrical potential is applied between anode 40 and cathode 41, the electrons (e-) move from the cathode to the anode. If the applied potential is reversed, the barrier layer (w) builds up and no current flows anymore.
    4, a junction field effect transistor (FET) is shown in finger structure with the semiconductor material (N). The charge carrier flow 45 of the charge carriers (e +) from the drain 42 to the source 44 is controlled by the electrical potential at the gate 43.
    In an attempt to operate semiconductors at the required boundary conditions above, there are some problems: 1. Deflection in the magnetic field: There is the problem that moving charge carriers in the magnetic field are deflected depending on the direction of movement. As a result, the characteristic (gain, forward voltage, etc.) of the semiconductors is alienated until the component is unusable. Different directions of the B-field are possible.
    In the example of FIG. 4, the E-field is aligned in the x-direction by the applied voltage between drain 42 and source 44. The electric field exerts on the charge carriers (e +) with the charge q (in FIG Holes shown) a force in the x-direction, which leads depending on the mobility (μ) [3] of the semiconductor to a current along the x-direction. When creating a B-field, an additional Lorentz force (F = q · v × B) acts where v corresponds to the velocity of the charge carriers (F, v and B are vectors, the "x" character is the cross-product). The force can now be different depending on the orientation of B.
    A) At B in the x-direction only, no further effect occurs because the cross product v x B = 0.
    B) At B in the z-direction, the Lorentz force acts in the xy plane.
    In Fig. 5, the xy plane is shown. The figure shows the movement of a charge carrier without collision when applied E-field in the x-direction of -1 V / pm and a B-field in the z-direction of -10 T. For the mass of the carrier was for a hole in GaAs with the effective mass of 0.45 me (me denotes the electron mass). The charge carrier is at time zero at the origin and at a standstill. The general solution for the motion of a charge carrier in a homogeneous E and B field results in a cyclotron motion superimposed with a drift motion given by the direction E x B. At the given starting conditions, the particle initially moves in the x-direction. As the speed increases, so does the Lorentz force, directing the particle into a curved path, and the particle comes back to the zero point of the x-axis, where it reverses its direction, and the motion starts again identically from the beginning. As the magnetic field increases, the curvature of the web increases and the pattern then scales down in both spatial dimensions, x and y.
    However, this movement only applies until the first collision. Without collision, the global motion leads only in y-direction and it flows, if the distance from the drain to the source does not fall below a certain value (in Fig. 5 would be about 50 nm), no flow from drain to source. However, since the motion in a semiconductor is usually slowed down by collisions, the charge carrier can only travel undisturbed for a certain distance from the origin. After a collision, the process begins again and again with the same initial conditions. This leads to an average movement which, depending on the frequency of the collisions and the strength of the magnetic field, can be between the x (frequent collisions or weak magnetic field) and the y direction (few collisions or strong magnetic field). Another expression for the frequency of collisions is the mobility (μ), which is given by: μ = q · nc / me, where nc corresponds to the mean free time until the next collision and me the effective charge carrier mass.
    The angle of deviation of the mean direction of movement of the E-field direction is now shown in Fig. 6 as a function of the magnetic field for different mobilities μ, the sake of clarity, the Dc as fixed (always the same) and not statistically distributed in the Invoice received.
    As long as the angle is small (e.g., less than 20 degrees), there is no significant change in the trajectory and hence the characteristics of the semiconductor. With increasing angle, the distance to be covered increases, to the extreme case of 90 degrees, then to infinity. This leads to an ever greater resistance between drain and source. With a typical mobility of μ = 1 m2 / (Vs), which applies to GaAs (gallium arsenide) at 300 K, and a field strength of 1 T, the charge carriers are deflected on average by almost 20 degrees with respect to the E field direction. At lower temperatures, the mobility of GaAs becomes much larger (e.g., μ = 5 m2 / (Vs) at 77K). Further data are presented in [4] for silicon. The deflection here is almost 80 degrees, so now hardly more charge carriers from the drain to the source and the semiconductor is no longer functional. The above consideration applies to semiconductor geometries, which are much larger in the y-direction than in the z-direction, which is usually the case with modern field effect transistors.
    C) At B in y-direction acts on the charge carriers a force in the z-direction. As a result, the charge carriers are deflected in the z direction in addition to their normal movement in the x direction. Since the thickness (z-direction) of the field-effect transistors is very small, the drift motion of the charge carrier is stopped at the boundary of the conducting region and an opposing electric field (Hall field, [4]) builds up, which is adjacent to the E field in Direction (caused by the
    Gate-source voltage) is superimposed and thus leads to changes in the characteristic. Because of the complex geometry, this effect is not exactly quantifiable.
    The adverse effects described in b) and c) typically occur at magnetic field strengths B0 of 1 T or above, and depending on the boundary conditions, the measures according to the invention become more and more necessary for fields above 1.5 T, 3 T or above. At very high field strengths of 7 T or more, they are virtually unavoidable.
    2. Freezing: In addition, at low temperatures increased charge carriers freeze, their concentration thus decreases, which also leads to an increase in electrical resistance. Concretely, the two effects 1 and 2 increase and can have the following effects: In the case of a field-effect transistor, the conductivity of the channel can be reduced to virtually zero, whereby the element is no longer usable. In a diode, the conductivity also decreases, with a given current, the forward voltage increases, so that in extreme cases, the diode practically completely isolated.
    3. Dissipation: Depending on the application, a dissipation takes place in the electronic components which massively heats the component when the power can not be dissipated. This can completely prevent cooling in cryogenic operation or, in pulsed operation, heat the component in a pulsed manner. For example, a FET should be cooled to reduce its inherent noise. Due to the quiescent current at the operating point, so much power can already be dissipated that the FET can not be adequately cooled and thus the noise is much too high.
    4. Cooling: At high power densities in semiconductor components, these must be sufficiently cooled, which is often realized with liquid nitrogen. This has the advantage that thermal performance can be dissipated locally even without further constructional precautions. As an undesirable side effect, however, boiling with bubbling occurs above a certain power density. This results in a modulation of the signal in the immediate vicinity of all electrical components due to the variation of the density and thus of the dielectric constant. This often results in very strong stochastic phase modulations, resulting in artifacts in the measurement data.
    State of the Art Overall Arrangement Only a few published articles can be found today.
    Most cryogenically cooled receiving systems can be classified into the following three categories (TX means transmit, RX means receive): a) TX / RX through the same coil for both functions. This arrangement does not require any electronics in the vicinity of the coil and is published in many variants of the literature.
    For NMR applications, an arrangement was published in [5]. This includes a cooled volume coil for transmission and reception. The associated electronic circuit is located outside the magnet.
    In [6] an arrangement for MRI is shown, with an HTS surface coil cooled in LN2 and operated in an RX / TX mode.
    [7] discloses a further refined embodiment which generates a quasi-homogeneous volume field with a Helmholtz arrangement. This arrangement is also operated in RX / TX mode. Both arrangements have in common that they have no refrigerated electronics.
    B) RX-only (receive only) by a receiving coil, in which case this is geometrically decoupled from the transmitting coil (volume coil or resonator) (as shown in Fig. 2, but with B1 parallel to the coil surface of the receiving coil ).
    As such, such an arrangement would also require no electronics in the immediate vicinity of the receiving coil. However, since in practice the coupling between the transmitting coil and the receiving coil can not be reduced sufficiently, the remaining coupling requires further measures. A simplest rudimentary arrangement of this kind has been described in [8]. Here, the function of the cooled electronics limited to a purely passive reduction of the coupling of the receiving coil relative to the transmitting coil, which is done by two crossed diodes. However, this is only functional at high powers (hard pulses), at lower powers, as often used in NMR and MRI ("shaped pulse"), the diodes are no longer effective. In this arrangement, the diodes are apparently cooled directly in the liquid N 2 bath. The rest of the electronics is not cooled.
    An improved arrangement has been published in [9]. This includes a much larger electronic circuit. In this case, results were published with this cryogenic arrangement, which only makes low demands on the electronic circuit with appropriate orientation to the transmitting coil. Also, the preamplifier is not cooled in this arrangement.
    In [10] a planar array arrangement in liquid N2 was published. This planar arrangement, which allows a geometric decoupling of the transmitting coil, thus makes only low demands on the electronic circuit. However, it severely limits the scope of application. Nothing is disclosed about the orientation of the electronic components.
    C) An arrangement with any orientation of the receiving coil to the transmitting coil has been published in [11]. This is an apparently coolable electronic circuit in the immediate vicinity of the coil and thus in the magnetic field. It is not clear if and if so how the electronic components (barrier layers of semiconductors) are aligned. The preamplifier is not part of the cooled arrangement, thus leading to a loss of sensitivity. This arrangement is prepared for a cryogenic operation. However, the published measurements with the 2-element array, in which an electronic circuit in the immediate vicinity of the coil is required for the deactivation, have been recorded at room temperature. In addition, the proposed cooling with liquid nitrogen would lead to the above-described signal modulations and thus to artifacts in the measurements.
    In summary, the literature provides a few possible devices, the function of which, however, has been demonstrated only with restrictions. In particular, there are no devices in a general arrangement of the receiving coils, which could be used for receiving arrays. Apparently, it has not yet been possible to realize for a general arrangement of the coils the necessary and all requirements fulfilling electronics.
    PRIOR ART OF ARRANGEMENT OF ELECTRONICS In FIGS. 7 and 8, such known arrangements are outlined. The printed circuit board 70, 70 'is located directly in the liquid nitrogen 73 or is mounted on a heat sink 74, which in turn is located in the liquid nitrogen. The semiconductor components 72, 72 'are in a standard plastic housing 71, 71'. The vertical orientation of the semiconductor junction to the magnetic field B0 is often not controllable in such an embodiment.
    The obvious solution to build up the circuit with commercially available components often fails due to the ferromagnetic (Kovar) materials used for the housings. The heat dissipation in commercially available components is not optimal, because you would normally mount the housing on a heat sink, but this leads to a conflict with the RF signal, which often has to be performed electrically isolated. 1. Plastic housing This is completely unusable at low temperatures for heat transfer. The transmission takes place only via the metallic connecting legs, which, however, generally have an electrical potential and therefore can not be mounted directly on a metallic thermal sink. The thermal conductivity of plastics is very low at low temperatures and thus unsuitable [12]. 2. Ceramic Housing Ceramic enclosures usually provide better thermal bonding and metal, but the ceramic housings often have Kovar components, resulting in uncontrollable field distortions and even the magnetic field in the immediate vicinity of the semiconductor can bundle. Often, metal sheaths also contain nickel layers, which also lead to field distortions and are therefore completely undesirable in the magnetic field. All housings with magnetizable materials in the immediate vicinity of the measuring range additionally distort the B0 field in the measuring volume and, as already mentioned, can lead to artifacts in the measurement results.
    OBJECT OF THE INVENTION The present invention is based on the object, in an apparatus for magnetic resonance MR spectroscopy or tomography with an electronic circuit of the type defined in the introduction, with the simplest possible technical measures, an unadulterated characteristic of the semiconductor components used to ensure very strong magnetic field and low operating temperatures.
    BRIEF DESCRIPTION OF THE INVENTION This object is achieved in a surprisingly simple and effective manner by an apparatus for magnetic resonance MR spectroscopy or tomography of the type mentioned at the outset, which is characterized in that at least one semiconductor junction of at least one of the semiconductor components of the electronic circuit is arranged so that the average direction of movement of the charge carriers in the semiconductor junction is substantially parallel to the magnetic field lines of the magnetic field B0, wherein the corresponding semiconductor component is disposed directly on a support which is constructed of a material with good thermal conductivity properties.
    Contrary to all problems in the implementation, the real solution is a waiver of all housing of the semiconductor components (legs, leads, etc.) and a direct mounting of the semiconductor chips on a thermally well-conductive substrate.
    By "direct" can here also be understood a thin adhesive or solder layer, since this has no significant effect on the thermal and electrical properties. "Essentially" means a deviation of at most 45 degrees. By "good thermal conductivity" is meant more than 10 Wm 1K, preferably more than 100 Wm 1K 1.
    For most applications, the requirement is that the carrier material consists of an electrical insulator. As a substrate must be deviated from the substrates commonly used in electronics such as FR4, Teflon, etc. The materials used must have maximum thermal conductivity [12] at cryogenic temperatures. This is made possible by the support material consists of ceramic alumina, aluminum nitride, sapphire, beryllium oxide and / or silicon oxide. However, other suitable materials may be used. As a practically optimal solution for the desired cryogenic use sapphire offers, which is completely unusual in electronics. This makes it necessary to use the following technologies: The mounting and thermal connection of the semiconductors to a sapphire substrate poses a technological challenge. This can be done by soldering, gluing (thermal grease) etc., but has to cope with the extreme temperature cycles of cooling and Warm up withstand. - Also problematic is the electrical connection to the semiconductor components. This can typically be done by bonding with aluminum or gold wire. - The overall arrangement is to be oriented accordingly, that the condition of the orientation of the B0 field lines parallel to the charge carrier movement direction is met.
    In Fig. 1, a concrete example of such an arrangement is outlined, which is the simplest case of a minimum cryogenic two-door.
    For a trouble-free operation, it is strongly advantageous that no phase transition can take place in the medium 17 surrounding the device in the operating state. Such a phase transition would be the case with cooling in liquid nitrogen, for example. Advantageously, the device is designed so that it is in a vacuum. Thus, any modulation due to density variations of a cooling medium is avoided. However, this requires that the entire heat conduction takes place exclusively via a solid. For this purpose, a sapphire substrate is optimally used as carrier 12.
    Furthermore, the carrier is connected to a thermal sink. The sink acts here as the heat sink 14, which is cooled by a cooling medium 15. The connection is shown here with a screw connection 13 and heat-conducting grease between carrier 12 and heat sink 14. The sapphire substrate is metallized accordingly with a conductor structure 18. The semiconductor component 10 is soldered or glued onto the pad and electrically contacted by means of a bond connection 11. The terminals 16 to the remaining circuit elements of the overall circuit, which are not critical with respect to the above requirements, may be routed via solder pads.
    The arrangement is oriented so that the requirement for the orientation of the barrier layer in the semiconductor component 10 to the magnetic field B0 is met.
    This arrangement is only the basic principle, of course, much more complex circuits can be realized in this way. In circuits with a plurality of semiconductor elements, it is advantageous that all semiconductor junctions are oriented so that the direction of movement of the charge carriers is substantially parallel to the magnetic field lines.
    In certain cases (semiconductor component has all the connections accessible above, which are contacted with two or more bonding wires or even those in which the chip is contacted directly to ground, such as in limi ter diodes), the substrate may be electrically conductive be. For metals, this also corresponds to a good thermal conductivity. This allows the components to be arranged such that the semiconductor components are thermally conductively connected to a carrier which consists of an electrically conductive carrier material. Typically, the carrier material may consist of copper, silver or aluminum.
    The solution outlined here ensures that all the materials used are not magnetizable.
    The details listed can also be implemented differently. Depending on the application, RF switching, RF limiter and / or varactor diodes can be used as circuit components as semiconductor components. The electronic components can be executed in different technologies. The starting materials GaAs, GaN, silicon, germanium, SiGe can be used for the semiconductor components.
    Further fall within the scope of the present invention, the use of an electronic circuit according to the preamble of claim 13, which is characterized in that at least one semiconductor junction of at least one of the semiconductor components of the electronic circuit is arranged so that the average direction of movement of the charge carriers in the semiconductor junction is substantially parallel to the magnetic field lines of the magnetic field B0, and the corresponding semiconductor component is arranged directly on a support, which is constructed of a material having thermally conductive properties, for amplifying an MR signal. The circuits can be used for a variety of purposes, such as: that the electronic circuit is used to amplify a signal, wherein as semiconductor components active elements such as FET and / or bipolar transistors are used; - That the electronic circuit is used to tune a receiver coil; - That the electronic circuit is used to match a receiving coil; - That the electronic circuit for reducing the induced by the transmitter resonator in the receiving coil current is used; - That the electronic circuit used to switch the receiving coil in the transmission case to a transmitter.
    The above described inventive solution opens up new possibilities to realize systems with much better performance for NMR and MRI receiving devices. Of course, other variations not described are possible, which can be realized by the skilled person.
    Further advantages of the invention will become apparent from the description and the drawings. Likewise, according to the invention, the above-mentioned features and those which are still further developed can each be used individually for themselves or for several in any desired combinations. The embodiments shown and described are not to be understood as exhaustive enumeration, but rather have exemplary character for the description of the invention.
    DETAILED DESCRIPTION OF THE INVENTION AND DRAWING The invention is illustrated in the drawing and will be explained in more detail by means of exemplary embodiments. Show it:
    1 shows an embodiment of the electronic circuit of the device according to the invention;
    FIG. 2 is a schematic overview of an MRI system; FIG.
    3 shows the cross section of a planar diode constructed;
    4 shows a FET structure with finger structure in an oblique view;
    5 shows the movement of a charge carrier in the xy plane under the influence of an E and B field;
    6 shows the average drift angle of a charge carrier;
    Fig. 7 prior art 1; and FIG. 8 prior art 2.
    1 illustrates an embodiment of the electronic circuit according to the invention with one or more semiconductor components 10 for use in an apparatus for MR (= "magnetic resonance") spectroscopy or tomography with a preferably superconducting magnet 20 for generating a magnetic field in the direction a z-axis in a arranged on the z-axis z = 0 working volume, wherein the electronic circuit as part of a cryogenic MR receiving 29 and / or MR transmitting device 24 at an operating temperature below 100 K and in a magnetic field B0 of at least 1 T is arranged in the MR apparatus, which is characterized in that at least one semiconductor junction of at least one of the semiconductor components 10 of the electronic circuit is arranged so that the average direction of movement of the charge carriers in the semiconductor junction substantially parallel to the magnetic field lines of the magnetic field B0 runs, the corresponding semiconductor component 10 is arranged directly on a support 12, which is constructed of a material with good thermal conductivity properties.
    List of Reference Numerals [0069]
    Semiconductor component 10
    Bond connection 11
    Carrier 12
    Screw connection 13 heat sink 14 cooling medium 15
    Connections 16
    Medium 17
    Ladder structure 18
    Magnetic field B0
    Magnetic coil system 20
    Dewar 21st
    Shim and gradient system 22
    Room temperature bore 23
    Transmitting coil 24
    Receiver coil 25
    Tune / Match / Detune Circuit 26 Preamplifier 27
    Electronic circuit 28
    Cryogenic Receiver 29 Cooler 30
    Sample 31 MRI electronics 32
    Excitation field B-,
    Transmitter TX
    Receiver RX
    Anode 40
    Cathode 41
    Barrier layer w
    Electron e-
    Positively doped area p
    Negatively doped area n
    Drain 42
    Gate 43
    Source 44
    Charge carrier flow 45
    Semiconductor material N
    Charge carrier e +
    Printed circuit board 70
    Plastic housing 71
    Semiconductor component 72
    Liquid nitrogen 73
    Printed circuit board 70 '
    Plastic housing 71 '
    Semiconductor component 72 '
    权利要求:
    Claims (15)
    [1]
    Liquid Nitrogen 73 Heatsinks 74 Reference List [1] Roemer P B, Gemstone W A, Hayes C E, Souza S P, Mueller Ο M, The NMR Phased Array, Magnetic Resonance in Medicine 16 (1990), 192-225. [2] Pruessmann K P, Weiger M, Scheidegger B, Boesiger P, SENSE: Sensitivity Encoding for Fast MRI, Magnetic Resonance in Medicine 42 (1999), 952-962. [3] http: // de. wikipedia.org/wiki/mobility_(Physics) [4] Sze S M, Semiconductor Devices, Physics and Technology, J. Wiley & Sons (1985), ISBN 0-471-87424-8. [5] Styles P, Sublease NF, Scott CA, Cragg DA, Row F, White DJ, White PCJ, A High-Resolution NMR Probe in Which the Coil and Preamplifier Are Cooled with Liquid Helium, Journal of Magnetic Resonance 60 (1984) , 397-404. [6] Black R D, Early T, Roemer P, Mueller O, Mogro-Campero A, Turner L, Johnson G, A high-temperature superconducting receiver for nuclear magnetic resonance microscopy, Science 259 (1993), 793-795. [7] Nouls J C, Izenson M G, Greeley H P, Johnson G A, Design of a superconducting volume coil for magnetic resonance microscopy of the mouse brain, Journal of Magnetic Resonance 191 (2008), 231-238. [8] Wright A C, Song K, Wehrli F W, in Vivo MR Micro Imaging With Conventional Radiofrequency Coils Cooled to 77 K, Magnetic Resonance in Medicine 43 (2000), 163-169. [9] Wosik J, Bockhorst K H, l-Chih T, Narayana P A, Superconducting Receive-only 7 Tesla Coil for High Resolution Rat Brain DTI, Proc. Inti. Soc. Mag. Reson. Med. 20 (2012). [10] US 7 002 348 B2 [11] Wosik J, Nesteruk K, Camel MR, Ip F, Xue L, Wright AC, Wehrli FW, Cryogenic Varactor-Tuned 4-element Array and Cryostat for μ-MRI of Trabecular Bone in the Distal Tibia, Proc. Inti. Soc. Mag. Reson. Med. 16 (2008). [12] Edited by Reed P R, Clark A F, Materials at Low Temperatures, National Bureau of Standards Boulder, Colorado American Society for Metals, ISBN: 0-87170-146-4. claims
    1. Apparatus for magnetic resonance spectroscopy or tomography with a magnet (20) for generating a magnetic field in the direction of a z-axis in a working volume arranged on the z-axis by z = 0 and a cryogenic MR reception (29). and / or an MR transmission device (24) having an electronic circuit with one or more semiconductor components (10), wherein the apparatus is set up to produce an operating temperature below 100 K and a magnetic field B0 of at least 1 T in the MR apparatus, characterized in that at least one semiconductor junction of at least one of the semiconductor components (10) of the electronic circuit is arranged so that the mean direction of movement of the charge carriers in the semiconductor junction is substantially parallel to the magnetic field lines of the magnetic field B0, the corresponding semiconductor component (10) being mounted directly on a support (12) which is made of a material having a thermal conductivity of more than 10 Wm "1K" 1, preferably more than 100 Wm "1K'1, is constructed.
    [2]
    2. MR apparatus according to claim 1, characterized in that all the semiconductor junctions of the semiconductor components (10) of the electronic circuit are oriented so that the direction of movement of the charge carriers is substantially parallel to the magnetic field lines.
    [3]
    3. MR apparatus according to claim 1 or 2, characterized in that the carrier (12) is constructed from an electrically conductive carrier material, and that the semiconductor components (10) of the electronic circuit with the carrier (12) are thermally conductively connected.
    [4]
    4. MR apparatus according to claim 3, characterized in that the carrier material comprises copper, silver and / or aluminum.
    [5]
    5. MR apparatus according to claim 1 or 2, characterized in that the carrier (12) is constructed of an electrical insulator material.
    [6]
    6. MR apparatus according to claim 5, characterized in that the carrier material comprises ceramic aluminum oxide, aluminum nitride, sapphire, beryllium oxide and / or silicon oxide.
    [7]
    7. MR apparatus according to one of the preceding claims, characterized in that the electronic circuit is arranged in a vacuum.
    [8]
    8. MR apparatus according to one of the preceding claims, characterized in that the carrier (12) is thermally conductively connected to a thermal sink.
    [9]
    9. MR apparatus according to one of the preceding claims, characterized in that all the materials used are not magnetizable.
    [10]
    10. MR apparatus according to one of the preceding claims, characterized in that as semiconductor components (10) RF switching diodes, RF limiter diodes and / or varactor diodes are provided.
    [11]
    11. MR apparatus according to one of the preceding claims, characterized in that as semiconductor components (10) active elements are provided.
    [12]
    12. MR apparatus according to one of the preceding claims, characterized in that the starting materials of the semiconductor components (10) comprise GaAs and / or GaN and / or silicon and / or germanium and / or SiGe.
    [13]
    13. Use of an electronic circuit with one or more semiconductor components (10), which is arranged at an operating temperature below 100 K and in a magnetic field B0 of at least 1 T in the MR apparatus according to any one of claims 1 to 12, wherein at least one semiconductor junction at least one of the semiconductor components (10) of the electronic circuit is arranged such that the mean direction of movement of the charge carriers in the semiconductor junction is substantially parallel to the magnetic field lines of the magnetic field B0, and the corresponding semiconductor component (10) is arranged directly on a carrier (12), which is constructed of a material with thermally conductive properties, for amplifying an MR signal.
    [14]
    14. Use according to claim 13, characterized in that the electronic circuit is used for tuning and / or matching a MR reception coil (25).
    [15]
    15. Use according to claim 13 or 14, characterized in that the electronic circuit for reducing the current through an MR transmitting coil (24) in the MR receiving coil (25) induced current and / or for switching the MR receiving coil (25) in Transmission case is used on a transmitter.
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    法律状态:
    2019-10-31| PFA| Name/firm changed|Owner name: BRUKER SWITZERLAND AG, CH Free format text: FORMER OWNER: BRUKER BIOSPIN AG, CH |
    优先权:
    申请号 | 申请日 | 专利标题
    DE102012220978A|DE102012220978B3|2012-11-16|2012-11-16|Electronic circuit in the magnetic field of an MR apparatus and method for operating such a circuit|
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