MANUFACTURING METHOD AND INTEGRATED CIRCUIT SUBSTRATE

专利摘要:
non-lithographic patterned directed self-assembly alignment promotion layers. a method of an aspect includes forming a self-assembly alignment promoting layer directed onto a surface of a substrate having a first patterned region and a second patterned region. a first directed self-assembly alignment promoting material is selectively formed over the first patterned region without using lithographic patterning. the method also includes forming an assembled layer over the directed self-assembly alignment promoting layer by directed self-assembly. a plurality of assembled structures are formed, each predominantly including a first type of polymer over the first directed self-assembly alignment-promoting material. the assembled structures are each adjacently surrounded predominantly by a second different type of polymer over the second patterned region. the first directed self-assembly alignment-promoting material has a greater chemical affinity with the first type of polymer than with the second different type of polymer.
公开号:BR112015029548B1
申请号:R112015029548-7
申请日:2013-06-27
公开日:2021-06-01
发明作者:Robert L. Bristol；Rami Hourani；Eungnak Han；James M. Blackwell
申请人:Intel Corporation；
IPC主号:

专利说明:

Field
[0001] The modalities refer to the directed self-assembly field. In particular, the modalities refer to alignment or positioning structures formed through directed self-assembly. Background Information
[0002] Integrated circuits, in general, include interconnecting structures to electrically couple circuitry formed on a semiconductor substrate (for example, transistors and other circuit elements) with an external signaling means (for example, a package, pins, printed circuit board, etc.). In general, the multilayer interconnecting structures that are employed include multiple levels of generally coplanar metal or other interconnecting lines disposed within a dielectric or insulating layer. Pathways are generally used to provide selective electrical couplings between interconnecting lines at different levels by providing electrically conductive paths through dielectric or insulating materials between interconnecting lines at different levels.
[0003] Metal lines and roads are typically formed by a process that uses lithographic patterning to define their locations and dimensions. In the case of copper interconnect lines commonly revealed in many modern processors, a double damascene type process is generally employed. Representatively, in such a process, a photoresist layer may be spin coated over a dielectric layer on a substrate, generally with a thin rigid mask layer in between to facilitate cauterization transfer. The pathway openings can be initially patterned into the photoresist layer by exposing the photoresist layer to patterned actinic radiation through one or more patterned masks and then developing the photoresist layer to form the pathway openings. The lithographically defined openings for the pathways can then be used as a cauterizing mask to cauterize the openings for the pathways in the underlying dielectric layer. Subsequently, the openings for the metal lines can be similarly lithographically formed in the photoresist layer. Lithographically defined openings for metal lines can be used as a etch mask to etch line or trench openings for metal lines in the underlying dielectric layer. Metal (eg one or more barrier layers, bulk copper, etc.) can be introduced into the openings for the pathways and metal lines that have been formed in the dielectric layer. Chemical mechanical polishing (CMP) is commonly used to remove excess metal that lies outside the metal lines. Such a process can, in general, be repeated to form additional overlying levels of interconnecting pathways and lines. In general, lithography is used to position and align the pathways and interconnecting lines of an upper/overlying level relative to that of the adjacent lower/overlying level.
[0004] There is a general trend, from the past to the present, always towards decreasing the sizes and spacing of interconnecting structures for at least certain types of integrated circuits (eg processors, chipset components, graphics chips, etc.) . It is likely that in the future the sizes and spacing of interconnecting structures will continue to progressively decrease. A measure of the size of interconnecting structures is their critical dimensions (for example, line widths or road opening widths). A measure of the spacing of the interconnects is the pitch (for example, the line pitch and/or the via pitch). The pitch can represent the center-to-center distance between the nearest adjacent interconnecting structures (eg, adjacent lines or adjacent pathways).
[0005] When standardizing extremely small interconnecting structures and/or interconnecting structures in extremely small steps by such lithographic processes, several challenges tend to present themselves, especially when steps are about 50 nanometers (nm) or less and/or when the critical dimensions of the lines and/or tracks are about 20nm or less. A potential challenge is that overlap between roads and overlying interconnects and overlap between roads and overlying settlement interconnects, in general, need to be controlled to high tolerances. As steps (eg, track steps) become smaller and smaller over time, overlap tolerances tend to scale with them at an even greater rate than lithographic equipment is able to keep up.
[0006] Another potential challenge is that the critical dimensions of the openings (eg, the lane openings) in general tend to scale faster than the resolution capabilities of lithographic scanning devices. Shrink technologies exist to shrink the critical dimensions of openings. However, the amount of shrinkage tends to be limited by the minimum pitch as well as the ability of the shrinkage process to be sufficiently neutral to optical proximity correction (OPC) and not to significantly compromise the linewidth roughness (LWR) and/or critical dimension uniformity (CDU).
[0007] Yet another potential challenge is that the characteristics of LWR and/or photoresist CDUs in general need to improve as critical dimensions decrease in order to maintain the same overall fraction of the critical dimension budget. However, currently, the LWR and/or CDU characteristics of most photoresists are not improving as quickly as the critical dimensions are decreasing. BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS
[0008] The invention can be better understood by referring to the following description and the attached drawings which illustrate the embodiments of the invention. In the drawings: Figure 1 illustrates a block copolymer molecule suitable for embodiments.
[0009] Figure 2 is a block flowchart of a modality of a method to promote the positioning or alignment of assembled structures during self-assembly.
[00010] Figures 3A to E are cross-sectional views at different stages of one embodiment of an approach to form a directed self-assembly alignment promoting layer that uses one or more reactions that are selective or at least preferred for a material in relation to the other.
[00011] Figure 4 is a block flowchart of an embodiment of a method for forming a directed self-assembly alignment promoting layer by performing one or more reactions that are selective or at least preferred for one material over another.
[00012] Figures 5A to E are cross-sectional views at different stages of an embodiment of an approach to form a directed self-assembly alignment promoting layer using different heights of patterned regions.
[00013] Figure 6 is a block flowchart of an embodiment of a method to form a directed self-assembly alignment promotion layer using different heights of patterned regions.
[00014] Figures 7A to H are cross-sectional views at different stages of a detailed exemplary embodiment of an approach to form a directed self-assembly alignment promoting layer using different heights of patterned regions.
[00015] Figures 8A to C are cross-sectional views at different stages of an exemplary embodiment of a method for forming a DSAAP layer using a surface passivation treatment.
[00016] Figures 9A to C are cross-sectional views at different stages of an embodiment of an approach to form a directed self-assembly alignment promoting layer that utilizes a difference in porosity between materials.
[00017] Figure 10 illustrates a computing device suitable for modalities. DETAILED DESCRIPTION
[00018] In the following description, several specific details are presented, such as, for example, specific materials, reactions, material deposition and removal approaches, operations orders and the like. However, it is understood that embodiments of the invention can be practiced without such specific details. In other circumstances, well-known structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
[00019] Some modalities pertain to the directed self-assembly of block copolymers. Figure 1 illustrates a block copolymer molecule 100 suitable for embodiments. A block copolymer molecule is a polymer molecule formed from a chain of covalently linked monomers. In a block copolymer molecule, there are at least two different types of monomers. In addition, there are typically at least two contiguous blocks or sequences of monomers that have different monomer compositions. The illustrated block copolymer molecule includes an A 101 polymer block and a 102 B polymer block. The A polymer block predominantly includes a covalently bonded A monomer chain (e.g., AAAAA...), while the polymer block B predominantly includes a covalently bonded monomer chain B (e.g., BB-BBB.). Polymer A block and polymer B block are covalently bonded together. Monomers A and B can represent any of the different types of monomers used in block copolymers known in the art. As a specific example, monomer A can represent monomers for polystyrene and monomer B can represent monomers for poly(methyl methacrylate) (PMMA). In the illustrated example, each block includes only one type of monomer, although in other embodiments, at least one of the blocks can include two or more different types of monomer.
[00020] Typically, polymer blocks (for example, polymer A block and polymer B block) may each have different chemical properties. As an example, one of the blocks may be relatively more hydrophobic (eg water aversion) and the other relatively more hydrophilic (appreciation for water). Such differences in chemical properties (eg, a hydrophilic-hydrophobic difference or the other way around) can cause block copolymer molecules to separate or self-assemble microphase into different regions, domains or microphases. Differences in hydrophilicity or other chemical properties between polymer blocks can lead to a microphase separation in which different polymer blocks try to "separate" from each other due to their different chemical properties. However, due to the fact that the polymer blocks are covalently bonded together, they cannot completely "separate" on a macroscopic scale. Instead, polymer blocks of the same type belonging to different molecules may tend to realign or reposition and segregate or conglomerate into extremely small (eg, nano-sized) regions, domains or microphases. The size and shape of these domains generally depend in part on the relative lengths of the polymer blocks. By way of example, if one polymer block is smaller than the other but not much smaller, the block copolymer molecules can line up to form columnar structures with the separate smaller polymer blocks inside the columns and the polymer blocks larger that surround the columns.
[00021] A challenge in targeted self-assembly of block copolymers is controlling the locations or positions at which assembled structures are formed during self-assembly. For one thing, the overlying surface on which self-assembly is carried out, in general, tends to influence the positions of the assembled structures. In some embodiments, the overlying surface may have different materials. In some cases, different materials may tend to promote undesirable positions for the assembled structures. In other cases, different materials may not have a sufficient or at least not ideal influence on the positions of the assembled structures. For example, in the case of interconnecting structures, metal and dielectric materials may not have ideally different chemical properties to achieve the desired level of control over the positions of the assembled structures. Furthermore, in some cases, the chemical properties of the overlying surface can potentially vary from one region to another in a way that is difficult to control and/or that depends on conditions during one or more previous process operations.
[00022] Figure 2 is a block flow diagram of an embodiment of a method 204 to promote the positioning or alignment of assembled structures during self-assembly of two or more different polymers. The method includes forming a directed self-assembly alignment promoting (DSAAP) layer on a surface of a substrate having a first patterned region and a second patterned region at block 205. The DSAAP layer includes a first DSAAP material formed of selective mode on the first standardized region. In some embodiments, the first DSAAP material is not substantially formed over the second patterned region (e.g., not formed over more than about 10% of the second patterned region). In practice, there may be some small violation of the first DSAAP material over the second patterned region, although the amount is generally expected to be relatively small. However, the first DSAAP material can be substantially aligned over the first patterned region and reflect the boundary between the first and second patterned regions.
[00023] In some embodiments, the first DSAAP material can be selectively formed over the first patterned region without using lithographic patterning. In some embodiments, the first patterned region itself can be used to selectively align or form the first DSAAP material over the first patterned region. As an example, in some embodiments, the first and second patterned regions may include different types of materials and the first DSAAP material may include a product of a reaction from a precursor material that is capable of reacting selectively, or at least preferably, with a material from the first patterned region as compared to a material other than the second patterned region. As another example, in some embodiments, the first and second patterned regions may be at different heights (eg, one region may be recessed relative to the other) and the height difference may be used to align or form the first material of DSAAP selectively over the first standardized region. As yet another example, in some modalities one of the first and second patterned regions may have deeper pores than the other, the first DSAAP material may be introduced into the deeper pores and then chemical mechanical polishing or cauterization may be used to remove all of the first directed self-assembly except those deeper within the pores. Accordingly, in some embodiments, a first patterned region boundary may be used to selectively align or form the first DSAAP material over the first patterned region and/or may be "made in" the pattern of the first DSAAP material.
[00024] A possible alternative approach would be to use lithographic patterning to form the first DSAAP material selectively over the first patterned region. For example, this may involve depositing a layer of the first DSAAP material. Then, the layer can be lithographically patterned by lithographically exposing the layer to patterned actinic radiation with one or more masks and then removing a patterned portion of the layer based on the lithographic patterned exposure. However, especially when standardizing dimensions and/or extremely small steps, such use of lithography may tend to have the disadvantages mentioned in the preceding section. Furthermore, such use of lithography does not natively/naturally utilize the boundary of the overlying first patterned region to selectively align or form the first DSAAP material over the first patterned region. Finally, additional lithography operations tend to significantly increase the cost of general processes and may tend to involve overlapping errors.
[00025] The DSAAP layer and/or the first DSAAP material can be used to expose chemical properties different from those of the overlying surface for the two or more different polymers subsequently to be self-assembled on it. In some embodiments, the alignment-promoting layer/material can be used to expose chemical properties that are better suited to achieving the desired/desired positions of the assembled polymer structures than those of the overlying surface. For example, the alignment-promoting layer/material can be used to expose chemical properties (eg, hydrophilicity, hydrophobicity, water contact angles, etc.) that are more similar to one or more of the different types of polymers than those of the overlying surface. As another example, the alignment-promoting layer/material can be used to expose chemical properties that are relatively more different than those of the overlying surface. In some embodiments, the first DSAAP material can have a greater chemical affinity for a first type of polymer than the overlying surface has for any of the polymers to be mounted thereon.
[00026] Again referring to Figure 2, the method also includes forming an assembled layer on top of the DSAAP layer by directed self-assembly, at block 206. In some embodiments, this may include forming assembled structures, each predominantly including (by example, more than 70% by volume) a first type of polymer on the first DSAAP material. The assembled structures may each be enveloped predominantly adjacent (eg, greater than 70% by volume) by a second different type of polymer over the second patterned region. The DSAAP layer and/or the first DSAAP material can chemically affect or aid the alignment or positioning of the first polymer and, optionally, the second polymer during self-assembly. For example, the first DSAAP material can help expose favorable surface energy conditions to cause the first type of polymer to segregate, conglomerate, or microphase separate in it when opposed over the second patterned region. As a result, the first type of polymer may selectively or preferentially position or align over the first DSAAP material rather than the second patterned region. Advantageously, this can help to transfer or recreate the first patterned overlying region (eg, its dimensions and/or its pitch) in the overlying assembled structures of the assembled layer.
[00027] The sizes of the assembled structures (eg their critical dimensions or in cross-section) do not need to be defined lithographically, but instead may depend largely on the properties of the polymers (eg the lengths of the polymer blocks) . In some embodiments, assembled structures can be used to form extremely small structures (eg interconnecting structures) and/or structures in extremely small steps. For example, in some embodiments, the assembled structures can be used to form interconnecting structures that have critical dimensions of about 20 nm or less and/or interconnecting structures in steps of about 50 nm or less. Such extremely small structures and/or steps in general tend to present challenges for lithography. Other modalities are not limited to such small sizes and/or pitches.
[00028] Figures 3A to E are cross-sectional views at different stages of an embodiment of an approach to form a layer of DSAAP and then form a layer mounted on the layer of DSAAP. The approach uses one or more reactions that are selective or at least preferable to one material over another. The features described below for this approach can optionally be used with the method in Figure 2. Alternatively, this approach can be used with a similar or different method than the one in Figure 2. In addition, the method in Figure 2 can have approach same, similar or different and corresponding features.
[00029] Figure 3A shows a substrate 308. In some embodiments, the substrate may represent a semiconductor substrate. The semiconductor substrate can represent a general workpiece object used to fabricate integrated circuits. The semiconductor substrate generally includes a wafer or other piece of silicon or other semiconductor material. Suitable semiconductor substrates include, but are not limited to, single crystal silicon, polycrystalline silicon and silicon in insulator (SOI), as well as substrates formed from other types of semiconductor materials. The semiconductor substrate, depending on the stage of manufacture, generally has transistors, integrated circuitry, and the like formed on it. In addition to semiconductors, the substrate can also include metals, dielectrics, dopants, and other materials commonly disclosed in integrated circuits. Alternatively, any other types of substrates in known use for directed self-assembly of block copolymers can be used instead (ie, not limited to integrated circuit fabrication only).
[00030] The substrate 308 has a surface 309. The surface has a first patterned region 310 that has a first material 311. The surface also has a second patterned region 312 that has a second different type of material. For example, one of the materials could represent a metal or conductor material and the other could represent a dielectric material. In other embodiments, other materials and/or three or more different materials may be surface exposed. For example, in an alternative embodiment, one of the materials can be a cap material over a metal material and the other material can be a dielectric material.
[00031] Figure 3B shows a layer of DSAAP 315B formed on surface 309 of substrate 308 of Figure 3A. The DSAAP layer includes a first DSAAP 316 material selectively formed over the patterned first region. As shown, the first DSAAP material is selectively formed over (e.g., in) the first material 311, but not substantially over the second material 313 (i.e., not over more than about 10% of the second material). In practice there may be some small invasion of the first DSAAP material onto the second material, although the amount is generally expected to be small.
[00032] In some embodiments, the first material of DSAAP 316 can be selectively formed in the first material 311 by a reaction that is selective, or at least preferential, for the first material 311 compared to the second material 313. DSAAP material can represent a reaction product of a precursor material that selectively or at least preferentially reacts to the first material compared to the second material. In various embodiments, the reaction may proceed at a greater rate and/or to a greater extent in the first material compared to the second material or a combination thereof.
[00033] Figure 3C shows an optional second DSAAP material 317 formed in the DSAAP layer 315B of Figure 3B to form the DSAAP layer 315C. The second DSAAP material 317 is selectively formed over the patterned second region 312. As shown, the second DSAAP material can be selectively formed over (e.g., in) the second material 313, but not substantially over the first. material 311 (ie, generally no more than about 10%).
[00034] In some embodiments, the second DSAAP 317 material may represent a reaction product of a precursor material that selectively or preferentially reacts to the second 313 material compared to the first DSAAP 316 material, which is over the first region standardized 310. The increased selectivity and/or preferential may be based on a higher reaction rate, a greater extent of reaction, or a combination of these. The second material of DSAAP 317 is optional. In other embodiments, the first DSAAP 316 material may be capable of achieving the desired positioning or alignment. For example, the second material may already have sufficient chemical attributes and/or the same may be sufficient to attract, align or position one but not both polymers with the first material of DSAAP 316.
[00035] Figure 3D shows an unassembled layer 318 that includes a first polymer and a second different type of polymer formed over the DSAAP layer 315C of Figure 3C. In some embodiments, the unassembled layer may include a layer of a block copolymer material. The unmounted layer can be applied in a variety of different ways. By way of example, a block copolymer material can be dissolved in a solvent and then coated or applied to the surface, eg spin coating, dip coating, dip coating, dip coating by spraying or other approaches used for block copolymer layers. In this unassembled form, the block copolymer does not yet have substantially phase-separated and/or self-assembled to form structures, but instead the positions and orientations of the polymer blocks are substantially randomized.
[00036] Figure 3E shows an assembled layer 319 formed from the unassembled layer 318 of Figure 3D. The assembled layer includes a plurality of assembled structures 320 on the first DSAAP material 316. Each of the assembled structures includes predominantly (e.g., at least 70%) of a first type of polymer on the first DSAAP material. Each of the assembled structures is surrounded adjacently and predominantly (eg, at least 70%) by a second different type of polymer 321 over the second patterned region 317.
[00037] In some embodiments, the first material of DSAAP316 may have a greater chemical affinity with the first type of polymer 320 than the first material 311 has with both the first 321 and the second 321 types of polymers. The first DSAAP 316 material may have a greater chemical affinity with the first type of polymer 320 than with the second type of polymer 321. In a particular example, the first and second polymers may represent a polystyrene (poly) block copolymer. (methyl methacrylate)). Polystyrene (PS) is more hydrophobic than poly(methyl methacrylate) or PMMA. Polystyrene has a contact angle with water of about 90°. PMMA has a contact angle with water of about 70°. In some embodiments, one of the DSAAP materials may have a contact angle with water within about +/- 5°, about +/- 3°, or about +/- 1°, of one of the polymer blocks. (eg polystyrene) and the other DSAAP material may have a contact angle with water within about +/- 5°, about +/- 3°, or about +/- 1° of the other block of polymer (eg PMMA).
[00038] Assembled structures can be formed by self-assembly or microphase separation as described elsewhere herein. In some embodiments, the unassembled layer can be heated and/or its temperature increased to initiate, accelerate, enhance the quality of, or otherwise promote microphase separation and/or self-assembly. For example, this can be achieved by cooking the substrate, heating the substrate in an oven, heating the unmounted layer with a heat lamp, applying infrared radiation to the unmounted layer, or otherwise applying heat to and/or increasing the temperature of the unmounted layer. Heating or increased temperature can provide energy to produce the most mobile/flexible block copolymer molecules and ability to reposition. The amount of heat applied and/or the maximum temperature should, in general, be sufficient to achieve microphase separation and/or self-assembly without damaging the polymers or any other important thermally sensitive materials or structures. Commonly, the desired temperature can range from between about 150°C to about 350°C or between about 170°C to about 300°C, but it does not extend any significant thermal degradation limits.
[00039] Advantageously, the first material of DSAAP 316 is aligned with respect to material boundaries having different overlying patterns (eg, aligned with respect to the first material 311). The first material of DSAAP 316 can help align or position the assembled structures 320 of the first polymer relative thereto. As a result, by extension, the assembled structures can be aligned with respect to boundaries of different overlying patterned material (eg, aligned with respect to the first material 311). This alignment need not depend on lithography to standardize the first DSAAP material. In some embodiments, the assembled structures can be further processed and used to form other structures, such as interconnecting structures, microelectromechanical systems (MEMS), nanowires, or other structures.
[00040] Figure 4 is a block flow diagram of an embodiment of a method 425 for forming a DSAAP layer by performing one or more reactions that are selective or at least preferential for one material over another. In some embodiments, the method of Figure 4 can be used in the method of Figure 2 and/or with the approach of Figure 3A-E. Alternatively, the method of Figure 4 can be used in a similar or different method or approach. In addition, the method of Figure 2 and/or the approach of Figure 3A-E may use a method similar or different to that of Figure 4.
[00041] The method includes selectively forming a first DSAAP material over a first patterned region, but not substantially over a second patterned region, in block 426. In some embodiments, this includes performing a reaction that is preferential, or at least selective, for a first material of the first patterned region as compared to a second material other than the second patterned region.
[00042] The method optionally includes forming a second different DSAAP material selectively over the second patterned region, but not substantially over the first patterned region, in block 427. In some embodiments, this includes performing a reaction that is preferential, or at least selective, for the second material of the second patterned region compared to the first material of DSAAP over the first patterned region.
[00043] To further illustrate certain concepts, it may be helpful to consider some illustrative examples. In some cases, one of the materials can be a dielectric material and the other material can be a metal material or a polymer material or other material that does not react with aminosilanes, halosilanes or alkoxysilanes. Aminosilanes, halosilanes (eg, chlorosilanes, fluorosilanes, etc.) and alkoxysilanes (eg, methoxysilanes, ethoxysilanes and other alkoxysilanes) are capable of reacting selectively or at least preferentially with hydroxy groups on the surface of the dielectric material compared to metal material. Specific examples of suitable silanes include, but are not limited to, trichlorooctadecylsilane, octadecylchlorosilane, diethylaminotrimethyl silanes, bis(dimethylamino)dimethylsilane, methoxysilanes, ethoxysilanes and other similar silanes and combinations thereof. The reaction products of these reactions can be used to selectively cover the exposed surface of the dielectric material. If a certain generally smaller amount of reaction takes place in the metal material, it can be removed, for example, by washing with water. The silanes can include one or more other groups, such as, for example, straight chain alkanes, branched chain alkanes, other straight or branched organic chains, benzyl groups or other groups or various other known functional groups, in order to change the properties silanes and achieve the desired final chemical properties or affinities (eg, hydrophilicity or hydrophobicity) for the surface coating. As another example, bifunctional, trifunctional or multifunctional electrophiles, or a combination thereof, can be reacted with hydroxylated groups of a material (eg, an ILD) followed by reaction with a functional group of a polymer with the resulting activated reaction product.
[00044] As another example of a reaction that is selective for a dielectric material, steam initiator with hexamethyldisilazane (HMDS) has the ability to react with the generally hydrophilic surface of the dielectric material and attach to a monolayer of trimethylsilyl groups to yield an angle of contact with water in the range of about 50° to about 60°. In some embodiments, a second component can be used to change this contact angle and/or to achieve a different range of contact angles depending on the relative amounts of the two components. For example, the relatively more reactive component diethylaminotrimethylsilazane (DEATS) can be included along with HMDS in varying amounts to increase the contact angle with water anywhere from about 50° to about 60° around 80°. The number of cycles and/or the amount of material allowed to react in general provides another way to control the final properties (eg water contact angle) of the layer. In addition, DEATS can also potentially help to increase selectivity or preferentially over the metal, polymer or other surface. In addition to steam starting, such materials can also be applied using a liquid phase.
[00045] In some cases, one of the materials can be a metal material and the other material can be a dielectric material or a polymer material or other material that does not react with phosphoric acids. Various phosphoric acids have the ability to selectively or at least preferentially react with metal surfaces, both native and oxidized, to form strongly bonded metal phosphonates preferentially or even selectively on the surfaces of dielectric materials (eg, silicon oxides ). A specific example of a suitable phosphonic acid is octadecyl phosphoric acid. Such surface coatings, in general, tend to be stable in many organic solvents, but can be removed using mild aqueous base and acid solutions. Phosphoric acids can include one or more other groups, such as, for example, straight chain alkanes, branched chain alkanes, other straight or branched organic chains, benzyl groups or other groups, or various other known functional groups, in order to alter chemical properties and achieving the desired final chemical properties or affinities (eg, hydrophilicity or hydrophobicity) for the surface coating.
[00046] Another example of a reaction that is selective or at least preferable for metal materials when compared to dielectric materials or polymer materials or other materials are various metal corrosion inhibitors, such as those used during polishing chemical mechanic to protect interconnecting structures. Specific examples include benzotriazole, other triazole functional groups, other suitable heterocycle groups (e.g., heterocycle based corrosion inhibitors) and other metal corrosion inhibitors known in the art. In addition to triazole groups, other functional groups can be used to provide the desired attraction or reactivity towards metals. Various metal chelating agents are also potentially suitable.
[00047] Yet another example is that various thiols can alternatively be used to selectively or at least preferentially react with the metal surface when compared to dielectrics, polymers or other surfaces that do not tend to significantly react with thiols. As another example, 1,2,4-triazole or similar aromatic heterocycle compounds can be used to selectively react with the metal as compared to dielectrics and certain other materials.
[00048] In some cases, one of the materials may be a metal material or a dielectric material and the material gold may be a polymer material or other material that does not react with polymer brush materials. Polymer brush materials can represent or be regarded as polymers having one or more reactive functional groups at or near an end thereof such that they are operable to react with a surface generally at or near the end. Various polymer brush materials commonly have terminal hydroxyl groups, amino groups, halogen groups, or the like, which can react with hydroxylated groups on metal surfaces or dielectric materials. Polymer materials and certain other materials (eg, gold, etc.) may not readily react with such polymer brush materials. Therefore, in some cases, selectivity can be achieved.
[00049] Figures 5A to E are cross-sectional views at different stages of an embodiment of a method for forming a DSAAP layer using different heights of patterned regions and then forming a layer mounted on the DSAAP layer. The features described below for this approach can optionally be used with the method in Figure 2. Alternatively, this approach can be used with a method similar to or different from that in Figure 2. Also, the method in Figure 2 can have the same , similar or different approach.
[00050] Figure 5A shows a substrate 508. The substrate has a surface 509. The surface includes a top surface of a first patterned region 510 and a top surface of a second patterned region 512. The top surface of the second region patterned is greater than (for example, has a greater distance from an opposite bottom surface of the substrate) than the top surface of the first patterned region. The top surface of the first patterned region is recessed relative to the top surface of the second patterned region. In some embodiments, the first and second patterned regions may have different corresponding types of materials. In other modalities, the first and second patterned regions may have the same material type, but only at different heights.
[00051] Figure 5B shows a layer of a first material of DSAAP 530 introduced onto the top surface 509 of Figure 5A. The layer is introduced over the top surfaces of both the first and second patterned regions. By way of example, in some embodiments, the first patterned recessed region may have hole openings (for example, for tracks) or trench openings (for example, for interconnecting lines) and the layer may completely fill the trench openings or of orifice. As before, in some embodiments, the first DSAAP material may have sufficient chemical affinity to attract, align, or position one of the polymers of a block copolymer targeted self-assembly. In some embodiments, any of the polymer mat or polymer brush materials known in the art for directed self-assembly of block copolymers can be coated, deposited, or otherwise introduced onto the surface. Spin coating, spray coating, dip coating or various other coating methods are suitable. In other embodiments, other materials can be deposited, coated, applied, produced or otherwise introduced.
[00052] Figure 5C shows a layer of DSAAP 515C formed by removing a portion of the layer of the first material of DSAAP 530 of Figure 5B. As shown, the first DSAAP material has been removed from the top surface of the second patterned region 512. Another portion of the first DSAAP material 516 remains on the top surface of the first patterned region 510. The portion of the first DSAAP material 516 remains in the recessed portions in and above the first patterned region 510. Removal of this material essentially selectively forms the first DSAAP material over the first patterned region, but not substantially over the second patterned region. Examples of suitable approaches to removing the layer portion include, but are not limited to, chemical mechanical polishing (CMP), other planarizing approaches, operable heat treatments to evaporate, vaporize or otherwise remove surface material, etching (e.g. , dry etching or wet etching), other top-down material removal methods and combinations thereof. The top surface of the first remaining DSAAP material 516 may also be substantially coplanar with (for example, as in the case of CMP), or recessed with respect to (for example, in some cases where overcauterization is used), the top surface of the second patterned region 512.
[00053] Figure 5D shows an optional second DSAAP material 517 formed in the DSAAP layer 515C of Figure 5C to form a revised DSAAP layer 515D. The second material of DSAAP 517 is selectively formed over the second patterned region 512, but not substantially over the first patterned region 510 with allowance for some possible small invasion. In some embodiments, the second DSAAP 517 material may represent a reaction product of a precursor material that selectively reacts, or at least preferentially, with a top surface material of the second patterned region 512 compared to the first DSAAP material. DSAAP 516, which remains on the top surface of the first patterned region. Increased selectivity and/or preference may be based on a higher reaction rate, a greater extent of reaction, or a combination of these.
[00054] Figure 5E shows an assembled layer 519 formed on top of the DSAAP layer 515D of Figure 5D. The assembled layer includes a plurality of assembled structures 520 on the first DSAAP material 516. Each of the assembled structures predominantly includes (e.g., at least 70%) a first type of polymer. Each of the assembled structures is predominantly adjacent (eg, at least 70%) surrounded by a second different type of polymer 521 over the second patterned region and/or potentially the second DSAAP material. In some embodiments, an unassembled layer can be coated or otherwise introduced and then heated to promote self-assembly.
[00055] Figure 6 is a block flowchart of an embodiment of a method 635 to form a DSAAP layer using different heights of patterned regions. In some embodiments, the method of Figure 6 can be used in the method of Figure 2 and/or with the approach of Figures 5A to E. Alternatively, the method of Figure 6 can be used in a similar or different method or approach. In addition, the method of Figure 2 and/or the approach of Figure 5A-E may use a method similar or different to that of Figure 6.
[00056] The method includes introducing a first DSAAP material onto a surface of a substrate which includes onto a top surface of a first patterned region that is recessed relative to a top surface of a second patterned region, in block 636. The method also includes removing a portion of the first DSAAP material from the top surface of the second patterned region while leaving a portion of the first DSAAP material on the top surface of the first patterned region at block 637.
[00057] The method may also optionally include, selectively forming a second different DSAAP material on the top surface of the second patterned region, after removing the portion of the first DSAAP material from the top surface of the second patterned region, in the block 638. In some embodiments, the second DSAAP material can be selectively formed on the top surface of the second patterned region by performing a reaction that is selective or at least preferable to a top surface material of the second patterned region in comparison with the first DSAAP material, which remains on the top surface of the first patterned region. Forming the second DSAAP material other than the second patterned region is optionally not required.
[00058] Figures 7A to H are cross-sectional views at different stages of a detailed exemplary embodiment of a method for forming a DSAAP layer using different heights of patterned regions. Figure 7A shows a dielectric or insulating material 711 and a metal material 713. Commonly, the dielectric material can include silicon and oxygen (for example, any one of several silicon oxides) optionally combined with one or more other materials (for example , carbon, fluorine, other additives used in weak dielectric constant materials, etc.) and optionally produced porous to further lower the dielectric constant. The metal material can include one or more different metals (eg, a single metal or an alloy, stacks, layers, and/or other combinations of two or more different metals. In some embodiments, the metal material can include potentially alloyed metals. by copper or otherwise combined with one or more other metals.
[00059] The metal material is at least partially disposed or incorporated within the dielectric material. A top surface of the dielectric material represents a first patterned region 710. A top surface of the metal material represents a second patterned region 712. In the illustrated example, the top surface of the metal material (or second patterned region) is larger than the top surface of the dielectric material (or the first patterned region). The top surface of the dielectric (or first patterned region) is recessed relative to the top surface of the metal material (or second patterned region). An alternative arrangement is also possible.
[00060] In some modalities, these surfaces can be lowered by performing a cauterization. Advantageously, etching can aid in a cleaning of the exposed top surface and/or make it "purer" for subsequent reaction with overlying materials. In some embodiments, metal and dielectric materials may be disposed on a substrate (for simplicity, not shown), which may be similar to the other substrates described above.
[00061] Figure 7B shows a layer of a first polymer brush material 730 introduced onto the top surface 709 of Figure 7A. In another embodiment, a first polymer mat material can be used. The first polymer mat and/or brush material represents an embodiment of a first DSAAP material. Any of a variety of polymer mat or brush materials can be used. As shown, the layer can be formed, in general, insulating either on top surfaces of metal or dielectric materials at different heights. The layer can be formed by coating (e.g., dip coating, spray coating, etc.), deposition, or any other suitable approaches to applying polymer mat or brush layers known in the art.
[00062] Figure 7C shows the chemically covalent attachment or attachment of a first contiguous portion 740 of the polymer brush material or layer 730 to the exposed top surfaces of the metal and dielectric materials of Figure 7B. In some embodiments, the polymer brush material can have functional groups that can react with exposed functional groups on the exposed top surfaces of the metal and dielectric materials. For example, in some embodiments, amino, halogen, alkoxy, or hydroxyl groups of polymer brush molecules can react with exposed hydroxyl groups on top surfaces of metal and dielectric materials. In general, a relatively thin contiguous layer (eg, approximately a monolayer) of the polymer brush material can react. In some embodiments, heating or increasing the temperature of the polymer brush material can be used to promote the reaction. As an example, depending on the particular polymer brush material and processes, the temperature of the polymer brush material can be increased to between about 160°C to about 300°C or from about 170°C to about 270 °C, without exceeding any significant thermal limits of materials, structures or processes. Heating can be carried out for a time sufficient to carry out the reaction to a desired extent, which is generally in the order that is in the range of tens of seconds to several minutes.
[00063] Figure 7D shows the removal of a portion of the first layer of polymer brush 730C from Figure 7C to expose top surfaces 712D of one of the patterned layers. In the illustrated example, top surfaces 712D of metal material 713 are exposed. A portion of the first 730D polymer brush material remains on the top surface of the patterned recessed region, which in the illustrated example is the top surface of the dielectric material 711. Examples of suitable approaches to removing the layer portion include, but are not limited to, limitation, CMP, other planarization approaches, etching (eg dry etching) and other top-down material removal methods. A particular example of a suitable approach, for certain types of polymer brush materials, is a dry etching (eg, an oxygen etching) for a period of time on the order of several seconds to several tens of seconds. The top surface of the remaining first 730D polymer brush material may be either substantially coplanar with (eg in the case of CMP) or recessed with respect to (eg in some cases where overcautery is used), top surface of metal material.
[00064] The portion of the first 730D polymer brush material that remains on the top surface of the patterned recessed region is found to include two different types of the first polymer brush material. In particular, the portion includes first polymer brush material 740 that is covalently bonded to or affixed to the top surfaces of the dielectric material and to the vertical side walls of the metal material. In addition, the portion includes first unreacted or unfixed polymer brush material 730D away from those attachment surfaces that have not reacted or have been attached to metals or dielectric materials. Retaining this unreacted portion 730D over the reacted or fixed portion 740 can aid in protecting the reacted or fixed portion during cauterization, CMP processes or other processes used to remove excess first polymer brush material on top surfaces of the metal material. This can help keep it pure for the purpose of alignment or self-assembly positioning of block copolymers, but is not required.
[00065] Figure 7E shows the unreacted or unfixed portion 730D of the first polymer brush material removed from the reacted or fixed portion 740 of the first polymer brush material of Figure 7D. In some embodiments, the portion can be removed by washing or otherwise contacting the layer with toluene, acetone or other suitable organic solvent appropriate for the particular type of polymer brush.
[00066] Figure 7F shows an optional layer of a second different polymer brush material 742 introduced over the top surfaces of Figure 7E. The second polymer brush material 742 is a different type of material than the first polymer brush material 730 and represents an embodiment of a different second DSAAP material. In a particular example, the first and second polymer materials can be poly(methyl methacrylate) and polystyrene brush materials. As shown, the second polymer brush material is introduced (e.g., coated) onto the larger exposed top surfaces 712D of the metal material (in this example), as well as the top surfaces of the fixed first polymer brush material 740.
[00067] Figure 7G shows chemically covalent attachment or attachment with a contiguous first portion 744 of the second material or polymer brush layer 742 to the exposed top surfaces of the larger patterned (non-reset) region of Figure 7F. In the illustrated example, the top surface of the larger patterned region (not recessed) is the top surface of the metal material. In some embodiments, the second polymer brush material can have functional groups that can react with exposed functional groups on the exposed top surfaces of the metal material. For example, in some embodiments, amino, halogen, alkoxy, or hydroxyl groups of polymer brush molecules may react with exposed hydroxy groups on the top surfaces of the metal material. Typically, the second polymer brush material will not react with the fixed first polymer brush material due to the fact that the first polymer brush material may not have hydroxy groups or other suitable functional groups capable of participating in such reactions. . In some embodiments, heating or increasing the temperature of the second polymer brush material can be used to promote the reaction.
[00068] Figure 7H shows the unreacted or unfixed portion 742G of the second polymer brush material removed from Figure 7G. Covalently bonded or attached moieties 744 remain. In some embodiments, the unreacted or unfixed portion can be removed by washing or otherwise contacting the layer with toluene, acetone or other suitable organic solvent appropriate for the particular type of polymer brush. The first reacted or fixed polymer mat or brush material 740 and the second reacted or fixed polymer mat or brush material 744 represent one embodiment of a DSAAP layer. In some embodiments, a layer of a block copolymer, or two or more different unbonded polymers, can be formed over the DSAAP layer and self-assembled as described elsewhere herein.
[00069] In the embodiment of Figures 7F-H, the second material of DSAAP is also a polymer brush material, although this is not required. In other embodiments, other types of materials with the ability to be selectively or at least preferably formed on exposed top surfaces or "tables" (e.g. the metal material in the illustrated example) compared to the first brush material/ Polymer mat can be used instead. For example, in the case of exposed metal materials, silanes (eg, amino silanes, halosilanes, alkoxysilanes, hexamethyldisilazane (HMDS), diethylaminotrimethylsilazane (DEATS), combinations thereof, etc.), phosphoric acids (eg, octadecyl phosphoric acid, etc.) or metal corrosion inhibitors (eg benzotriazole (BTA), other triazoles, etc.) or thiols or 1, 2, 4 triazoles or a combination thereof can be used.
[00070] In some embodiments, assembled structures formed on the assembled layer can be used to form interconnecting structures (eg metal lines, tracks, etc.). Advantageously, since the fixed first and second polymer brush materials are aligned with respect to boundaries having different overlying patterns (e.g., the different heights of the metal and dielectric materials) and since the first and second brush materials Polymer fixtures assist in aligning or positioning the assembled structures thereon, the assembled structures, as well as the interconnecting structures formed therefrom, may also be aligned or positioned by extension relative to different overlying patterned boundaries. This can help improve alignment without having to rely on lithography for such alignment, especially when forming extremely small structures or structures in extremely small steps.
[00071] This is just an illustrative modality. Design variations are contemplated. As an example, the relative heights of metal and dielectric materials can be interchanged. As another example, materials other than metal and dielectric materials can be used. For example, the same type of material can be used or two different types of materials in addition to metal and dielectric materials can be used. As another example, removal of the unreacted polymer depicted for Figure 7E could optionally be omitted and that unreacted polymer could be removed with removal of the unreacted polymer depicted for Figure 7H. As yet another example, the reaction described for Figure 7C could optionally be omitted and that reaction could be performed with the reaction described for Figure 7G. Other suitable variations will be apparent to those of skill in the art and who have benefited from the teachings of the present invention.
[00072] Figures 8A to C are cross-sectional views at different stages of an exemplary embodiment of a method for forming a DSAAP layer using a surface passivation treatment. Figure 8A shows carrying out a passivation treatment 880 on top surfaces of a dielectric material 811 and a metal material 813 of a substrate 808. In the illustrated embodiment, the top surfaces of the metal and dielectric materials are coplanar, although alternatively either can be demoted in relation to the other. A top surface of the dielectric material represents a first patterned region 810. A top surface of the metal material represents a second patterned region 812. The passivation treatment represents a surface treatment that assists in passivating the top exposed surface of the dielectric material 811. In some embodiments, the passivation treatment may passivate or alter the surface of the dielectric material differently (eg, more or to a greater extent) than the surface of the metal material. As shown, a surface of the dielectric material can represent a passivated surface 882.
[00073] Without claiming to be bound by theory, it is currently believed that passivation treatment can assist in removing and/or altering surface exposed reactor groups in order to reduce their availability to react with a polymer brush material or other DSSAP material to be applied subsequently. For example, as mentioned above, metal and dielectric surfaces generally have exposed hydroxyl groups that can react with reactor functional groups of polymer brush materials or other DSAAP materials. The passivation treatment can selectively remove and/or change or at least preferentially alter the hydroxyl groups of the dielectric surface over those of the metal surface thereby helping to selectively reduce the reactivity of the dielectric surface to the brush material of polymer or other DSAAP material. After treatment, the metal surface is still able to react with the polymer brush material or other DSAAP material, but the dielectric surface is not able to do the same to the same extent.
[00074] An example of a suitable passivation treatment is a fluoride-based cauterization. A specific example of a suitable fluorine-based etching is a low power timed carbon tetrafluoride (CF4) etching, although the scope of the invention is therefore not limited. Again, without claiming to be bound by theory, it is currently believed that such fluorine-based cauterization can help remove hydroxy groups on the dielectric surface or convert them to fewer reactor groups, such as fluoride groups or other groups that contain fluorine. Initial results indicate that such fluoride-based etching may be able to selectively significantly reduce dielectric surface reactivity for polymer brush materials without reducing metal surface reactivity for polymer brush materials to the same extent. After baking, the polymer brush material can be washed from the dielectric surface, for example with an organic solvent wash, without being washed from the metal surface.
[00075] In addition, fluoride-based cauterization may tend to increase the hydrophobicity of the dielectric surface. This increased hydrophobicity can be used to produce the dielectric surface to attract or align hydrophobic polymers such as polystyrene. In some cases, this can help to avoid the need to apply an additional separate DSAAP material to the dielectric surface. Alternatively, a separate additional DSAAP material can optionally be applied to the dielectric surface, if desired. Furthermore, passivation of the dielectric surface, and making it more hydrophobic, can be performed in a single etching operation rather than having to use multiple operations or multiple layers.
[00076] Figure 8B shows the application of a layer of a first polymer brush material 830 onto the substrate surface of Figure 8A and securing a portion 840 of the first polymer brush material to the top surfaces of the metal material . Portion 840 of the first polymer brush material is selectively attached or bonded to the metal surface, but not to the dielectric surface. The passivation surface 882 can help prevent the first polymer brush material from settling onto the dielectric surface. In some embodiments, a relatively more hydrophilic polymer brush material, such as a PMMA polymer brush material, can be used. This can help produce the second patterned region that has the PMMA attracted to or aligned with metal material.
[00077] Figure 8C shows the removal of the layer of the first 830 polymer brush material from the substrate surface of Figure 8B. Unreacted polymer brush material can be removed, for example, by washing or contacting the polymer brush material layer with a suitable solvent such as toluene, acetone, poly(ethylene glycol) methyl ether acrylate ( PEGMEA) or other suitable organic solvents. The remaining portion 840 of the first polymer brush material remains on the metal surface, but no significant portion of the first polymer brush material can remain on the dielectric surface. Also shown is an assembled layer that includes assembled structures 820 of a first polymer on the dielectric material and assembled structures 821 of a second polymer on the metal material. As mentioned above, fluorine-based cauterization or other passivation treatment can make the dielectric surface relatively more hydrophobic so that it can be able to attract or align a relatively more hydrophobic material, such as polystyrene. In some embodiments, the second polymer material is relatively less hydrophobic, such as, for example, PMMA, which can be attracted by a PMMA polymer brush material onto the metal surface. However, the scope of the invention is not limited to just these types of polymers. In addition, another DSAAP material can optionally be formed over the passivation layer or dielectric material, if desired.
[00078] Other modalities are not limited to the use of such fluoride-based cauterization as a passivation treatment. Instead, other embodiments can passivate or otherwise treat heterogeneous surfaces with other reagents or modifying agents that are capable of selectively or at least preferably modifying one of the surface types differently from the other. For example, in some embodiments, a corrosion inhibiting or metal bonding agent can be contacted with the surface to treat the metal surface. Examples of suitable corrosion inhibitors or other metal binding agents include, but are not limited to, benzotriazole and various other known triazole type corrosion inhibitors, various heterocyclic type corrosion inhibitors and other metal corrosion inhibitors known in the art. In some modalities, the treatment can be carried out during a chemical mechanical polishing operation. The treatment can aid in producing the metal surface selectively less reactive to polymer brush materials or other DSAAP materials similarly as described above for the passivation treatment.
[00079] Figures 9A to C are cross-sectional views at different stages of a modality of an approach to form a DSAAP layer that uses a difference in porosity between materials. In some embodiments, this approach can be used with the method of Figure 2 and/or the approach of Figures 3A to E, although this is not required.
[00080] Figure 9A shows a substrate 908 that has a patterned first region that has a first material 911 and a second patterned region that has a different second material 913. The second material has pores 945. In one aspect, both the second material it is porous insofar as the first material is substantially non-porous or, in another respect, the second material has deeper pores than the first material. In a particular embodiment, the first material may be a metal material and the second material may represent a dielectric material (e.g., a lower k-porous dielectric material).
[00081] Figure 9B shows a layer of a first material of DSAAP 946 formed or introduced onto the surface of Figure 9A. The first DSAAP material is also introduced into pores 945. In some embodiments, the first DSAAP material can have a molecular weight low enough to flow into the pores. In some embodiments, the polymer may be a polymer brush material and/or a polymer mat material and/or other type of polymer material with the ability to solidify or crosslink to help keep the polymer within the pores and/or reduce dissolution in solvents. In a still further embodiment, the polymer can be a common polymer material that does not need to have the ability to react with the surface or crosslink, but instead can be fluid into the pores at a higher temperature and thereafter solidified.
[00082] Figure 9C shows the portion of the layer 946 of Figure 9B removed from the top surface of the first material 911, but another portion of the first material of DSAAP that remains within filled pores 947. Examples of suitable approaches for removing the portion of layer include, but are not limited to, etching, CMP, other planarization approaches, and other top-down material removal approaches. If desired, another material may optionally be formed on top of the first material 911 (for example, using one of the selective reactions described elsewhere herein).
[00083] In some embodiments, each of two different DSAAP materials may have similar chemical properties to a corresponding different polymer to be self-assembled into them. For example, a first DSAAP material may have a contact angle with water within about +/- 5°, or about +/- 3°, or about +/- 1° of a first polymer and a second DSAAP material can have a contact angle with water within about +/- 5°, or about +/- 3°, or about +/- 1° of a second polymer. For example, brush materials from the same two polymers can be used. In other embodiments, one of the two DSAAP materials can have similar chemical properties to one of the polymers and the other DSAAP material can have substantially neutral properties that are intermediate or about halfway between the two different polymers. For example, the first DSAAP material may have a contact angle with water within about +/- 5°, or about +/3°, or about +/- 1° of a first polymer and second material. of DSAAP can have a water contact angle within about +/- 5° of the average water contact angle of the two polymers. That is, the second DSAAP material can have substantially the same chemical affinity for the two different types of polymers. For example, if the two different polymers are A-A-A-A... and B-B-B-B..., then suitable neutral polymers could be A-B-A-B-A-B-A-B., and A-A-B-B-A-A-B-B., A-B-B-A-A-B-A-B., and A-A-B-B-A-A-B-B., A-B-B-A-A-B-A-B. and the like. The second DSAAP material can be relatively neutral with respect to self-assembly such that the first DSAAP material primarily affects the positioning of the assembled structures. This can be beneficial when the second DSAAP material occupies relatively larger surface areas than the first DSAAP material. For example, a relatively larger surface area of dielectric material surrounding metal interconnecting structures can be made neutral so that the DSAAP material over the metal interconnecting structures primarily controls positioning.
[00084] It is verified that the approaches disclosed in this document can be used in several other combinations than those explicitly shown. For example, introducing a material into a pore can be combined with a selective reaction, a selective reaction can be combined with different pattern heights, pores can be combined with different heights, etc. For simplicity, two different locations (eg a metal surface and a dielectric surface) have been shown and described. However, in other embodiments, three or more different locations can optionally be used. The modalities were described in the context of forming interconnected structures. However, other modalities can be used to form semiconductor devices, memory devices, magnetic storage media, nanowires, photonic crystals, quantum dots, microelectromechanical systems (MEMS) or other devices and/or small structures in general.
[00085] Figure 10 illustrates a computing device 1060 according to an implementation of the invention. In many deployments, the computing device 800 can be a laptop-type computer, a netbook-type computer, a notebook-type computer, an ultrabook-type computer, a smart phone, a tablet-type computer, a personal digital assistant ( PDA), an ultra mobile PC, a mobile phone, a desktop computer, a server, a printer, a scanning device, a monitor, an encoder, an entertainment control unit, a digital camera, a music player laptop or a digital video recorder.
[00086] The computing device has a 1061 board. The motherboard may include components, including but not limited to a 1062 processor and one or more 1063 communication chips. In other implementations, the 806 communication chip may be part of the processor. The communication chip can enable wireless communication. Depending on your applications, the computing device may include other components. Examples of such other components include, but are not limited to, volatile memory (eg DRAM) 1064, non-volatile memory (eg ROM) 1065, flash memory (not shown), a graphics processor 1066, a signal processor digital (not shown), an encryption processor (not shown), a 1067 chip set, a 1068 antenna, a 1069 touch controller, a 1070 battery, an audio codec (not shown), a video codec ( not shown), a power amplifier 1073, a global positioning system (GPS) device 1071, a compass 1072, an accelerometer (not shown), a gyroscope (not shown). These and several other components that have integrated circuits can include one or more structures (e.g., interconnecting structures) formed using the modalities described herein. Examples include, but are not limited to, processors, communication chips, chip sets, graphics chips, semiconductor memory devices, etc. EXEMPLIFYING MODALITIES
[00087] The following examples belong to additional modalities. The specifications in the examples can be used anywhere in one or more modalities.
[00088] Example 1 is a method for fabrication that includes forming a directed self-assembly alignment promoting layer on a surface of a substrate having a patterned first region and a patterned second region. Forming the directed self-assembly alignment promoting layer includes forming a first directed self-assembly alignment promoting material selectively directed over the first patterned region. The formation of the first self-assembly alignment promoting material selectively directed over the first patterned region is optionally performed without using lithographic patterning. The method also includes forming an assembled layer over the directed self-assembly alignment promoting layer by directed self-assembly. Forming the assembled layer which includes forming a plurality of assembled structures, each of which predominantly includes a first type of polymer over the first directed self-assembly alignment-promoting material and which are each adjacently surrounded by a predominantly second different type of polymer over the second patterned region. The first directed self-assembly alignment-promoting material has a greater chemical affinity with the first type of polymer than with the second different type of polymer.
[00089] Example 2 includes the method of Example 1 in which optionally forming the first self-assembly alignment promoting material selectively directed over the first patterned region includes performing a reaction that is preferable to a material of the first patterned region over a second material different from the second patterned region.
[00090] Example 3 includes the method of Example 2 in which optionally one of the material of the first patterned region and the second material other than the second patterned region is a metal material and the other is a dielectric material.
[00091] Example 4 includes the method of any one of Examples 1 to 3 in which optionally carrying out the reaction includes at least one of: (1) reacting at least one of an aminosilane, a halosilane and an alkoxysilane with hydroxyl groups of the first standardized region; (2) reacting a functional group of a polymer with the hydroxy groups of the first patterned region; (3) reacting a phosphonic acid with a metal of the first patterned region; (4) reacting a thiol with the metal of the first patterned region; (5) reacting at least one of triazole and a corrosion inhibitor with the metal of the first patterned region; (6) reacting 1, 2, 4 triazoles with the metal of the patterned first region; (7) reacting a heterocycle corrosion inhibitor with the metal from the patterned first region and (8) reacting a multifunctional electrophile with hydroxy groups from the patterned first region.
[00092] Example 5 includes the method of any one of Examples 1 to 4 and optionally further including, after a formation of the first self-assembly alignment promoting material selectively directed over the first patterned region, forming a second Targeted self-assembly promotional material selectively differs on the second standardized region, but not on the first standardized region.
[00093] Example 6 includes the method of Example 5 in which optionally forming the second self-assembly alignment promoting material selectively directed over the second patterned region includes performing a reaction that is preferable to the second material of the second patterned region in comparison with the first directed self-assembly alignment promotion material that is over the first standardized region.
[00094] Example 7 includes the method of any of Examples 1 and 3 in which optionally forming the first self-assembly alignment promoting material selectively directed over the first patterned region includes introducing the first self-assembly alignment promoting material self-assembly directed over the top surfaces of both the first and second patterned regions, the top surface of the first patterned region recessed relative to the top surface of the second patterned region. Forming the first self-assembly alignment promoting material selectively directed over the first patterned region optionally further includes removing the first directed self-assembly alignment promoting material from the top surface of the second patterned region while leaving the first material of self-assembly alignment promotion directed over the top surface of the first patterned region.
[00095] Example 8 includes the method of Example 7 in which optionally removing the first directed self-assembly alignment promoting material includes performing at least one of etching and chemical mechanical polishing.
[00096] Example 9 includes the method of any one of Examples 7 to 8 and optionally further including, after a formation of the first self-assembly alignment promoting material selectively directed over the first patterned region, forming a second Targeted self-assembly promotional material selectively differs on the second standardized region, but not on the first standardized region. This optionally includes performing a reaction that is preferable to a second patterned region top surface material compared to the first directed self-assembly alignment promoting material that remains on the top surface of the first patterned region.
[00097] Example 10 includes the method of any one of Examples 1 to 9 in which optionally forming the directed self-assembly alignment promoting layer includes forming the first selectively directed self-assembly alignment promoting material over a targeting material. metal of the first standardized region. The first directed self-assembly alignment-promoting material optionally has greater chemical affinity with the first type of polymer than with the second type of polymer. Optionally, forming the directed self-assembly alignment promoting layer includes forming a second selectively different directed self-assembly promoting material over a patterned second region dielectric material. The second directed self-assembly alignment-promoting material optionally has one of a greater chemical affinity with the second type of polymer than with the first type of polymer and a substantially identical chemical affinity with the first and second types of polymer.
[00098] Example 11 includes the method of Example 1 in which optionally forming the first self-assembly alignment promoting material selectively directed over the first patterned region optionally includes introducing the first self-assembly alignment promoting material directed both over the first and the second patterned region, the first patterned region is more porous than the second patterned region. The first directed self-assembly alignment promoting material is introduced into the pores of the first patterned region. The first directed self-assembly alignment promoting material is removed from the second patterned region, at the same time leaving the first directed self-assembly alignment promoting material in the pores of the first patterned region.
[00099] Example 12 includes the method of any of the previous Examples and which includes optionally and additionally forming a second self-assembly alignment promoting material selectively directed over the second patterned region, but not the first patterned region.
[000100] Example 13 includes the method of any of the previous Examples in which optionally the formation of the directed self-assembly alignment promoting layer is included over an interconnecting line of one of the first and second standardized regions having a width of no more than 20 nanometers.
[000101] Example 14 is an integrated circuit substrate that includes a substrate. A surface of the substrate has a first patterned region that has a first material and a second patterned region that has a different second material. The integrated circuit substrate also includes a directed self-assembly alignment promoting layer that includes a first self-assembly alignment promoting material selectively directed over the first patterned region. The integrated circuit substrate also includes a layer mounted over the directed self-assembly alignment promoting layer. The assembled layer includes a plurality of assembled structures, each of which predominantly includes a first type of polymer on top of the first directed self-assembly alignment-promoting material and each is adjacently surrounded by predominantly a second different type of polymer on top of the second standardized region. The first directed self-assembly alignment-promoting material has a greater chemical affinity with the first type of polymer than with the second type of polymer.
[000102] Example 15 includes the IC substrate of Example 14 in which optionally the first directed self-assembly alignment promoting material is a reaction product of a precursor material that has the ability to preferentially react with the first material compared to the second material.
[000103] Example 16 includes the integrated circuit substrate of any one of Examples 14 to 15 in which optionally the first material is a metal material and the second material is a dielectric material.
[000104] Example 17 includes the integrated circuit substrate of any one of Examples 14 to 16 in which optionally the first directed self-assembly alignment promoting material includes at least one of: a reaction product of a phosphonic acid with the material of metal; a reaction product of a thiol with the metal material; a reaction product of at least one of triazole and a corrosion inhibiting metal with the metal material; a reaction product of a heterocycle corrosion inhibitor with the metal material; and a reaction product of 1, 2, 4 triazole with the metal material.
[000105] Example 18 includes the IC substrate of any of the preceding Examples in which optionally the first directed self-assembly alignment promoting material has greater chemical affinity with the first type of polymer than with the second type of polymer . Optionally additionally including a second selectively different directed self-assembly promotion material on the dielectric material. The second directed self-assembly alignment-promoting material optionally has one of a greater chemical affinity with the second type of polymer than with the first type of polymer and a substantially identical chemical affinity with the first and second types of polymer. 19 includes the integrated circuit substrate of any of the preceding Examples in which optionally the first material is a dielectric material and the second material is a metal material. Example 20 includes the integrated circuit substrate from Example 19 in which optionally the first material Directed self-assembly alignment-promoting material includes at least one of: a reaction product of at least one of an aminosilane, a halosilane, and an alkoxysilane with hydroxylated groups of the dielectric material; and a reaction product of a functional group of a polymer with hydroxylated groups of the dielectric material. Example 21 includes the integrated circuit substrate of any of the preceding Examples in which optionally the directed self-assembly alignment promoting layer includes a second material of self-assembly alignment promotion targeted selectively over the second patterned region but not the first patterned region.
[000106] Example 22 includes the IC substrate of Example 21 in which optionally the second directed self-assembly alignment promoting material is a reaction product of a precursor material that has the ability to preferentially react to the second material compared to the first targeted self-assembly alignment promotion material.
[000107] Example 23 includes the integrated circuit substrate of Example 14 in which optionally a top surface of one of the first and second patterned regions is recessed relative to a top surface of the other, in which the first material is a metal material and the second material is a dielectric material, wherein the first directed self-assembly alignment promoting material includes a first polymer material and which further includes a second polymer material different from the directed self-assembly alignment promoting layer selectively over the second standardized region.
[000108] Example 24 includes the IC substrate of any of the preceding Examples in which optionally the first material is more porous than the second material and in which the first directed self-assembly alignment promoting material is included in the pores of the first material.
[000109] Example 25 includes the integrated circuit substrate of any of the previous Examples in which optionally one of the first and second patterned regions includes an interconnecting line having a width that is not greater than 20 nanometers.
[000110] Example 26 is a method for fabrication that includes introducing a first directed self-assembly alignment promoting material onto top surfaces of a first patterned region and a second patterned region of a surface of a substrate, wherein the surface of top of the first patterned region recessed is relative to the top surface of the second patterned region; The method also includes removing the first self-assembly alignment promoting material directed through the top surface of the second patterned region, while leaving the first self-assembly alignment promoting material directed over the top surface of the first patterned region; The method also includes after removing the first directed self-assembly alignment promoting material from the top surface of the second patterned region, forming a second different directed self-assembly promoting material selectively on the top surface of the second patterned region by performing if a reaction that is preferable to the top surface of the second patterned region compared to the first directed self-assembly alignment promoting material, which remains on the top surface of the first patterned region. The method also includes assembling a layer that includes at least two different polymeric materials on top of the first and second directed self-assembly alignment promoting materials.
[000111] Example 27 includes the method of Example 26 in which optionally the introduction includes introducing a first polymer brush material over the top surfaces of the first and second patterned regions. The first polymer brush material includes a polymer with one or more reactive groups near an end thereof. The method further includes reacting a portion of the first polymer brush material with the top surfaces of the first and second patterned regions. Optionally forming the second different directed self-assembly promoting material selectively on the top surface of the second patterned region includes reacting a second different polymer brush material with the top surface of the second patterned region.
[000112] Example 28 includes the method of Example 27 and optionally which further includes retaining an unreacted portion of the first polymer brush material, which has not reacted with the top surface of the first patterned region, over the first patterned region, until after removing the first polymer brush material across the top surface of the second patterned region. Optionally, after removing the first polymer brush material across the top surface of the second patterned region, remove the unreacted portion of the first polymer brush material over the first patterned region.
[000113] Example 29 includes the method of any one of Examples 26 to 28 in which optionally one of the top surfaces of the first and second patterned regions includes a metal material and the other includes a dielectric material.
[000114] Example 30 includes the method of any of Examples 26 and 29 in which optionally the first and second directed self-assembly alignment promoting materials comprise different polymer brush materials in which optionally removing the first promotion material Self-assembly alignment of the top surface of the second patterned region includes performing at least one of etching and chemical mechanical polishing.
[000115] Example 31 is a fabrication system that includes means for forming a directed self-assembly alignment promoting layer on a surface of a substrate having a patterned first region and a patterned second region. Forming the directed self-assembly alignment promoting layer includes forming a first directed self-assembly alignment promoting material selectively directed over the first patterned region. The formation of the first self-assembly alignment promoting material selectively directed over the first patterned region is optionally performed without using lithographic patterning. The manufacturing system also includes means for forming a layer mounted over the directed self-assembly alignment promoting layer by directed self-assembly. Forming the assembled layer includes forming a plurality of assembled structures, each of which predominantly includes a first type of polymer on top of the first directed self-assembly alignment-promoting material and which are each adjacently surrounded by predominantly a second different type of polymer over the second patterned region. The first directed self-assembly alignment-promoting material has a greater chemical affinity with the first type of polymer than with the second different type of polymer.
[000116] Example 32 includes the manufacturing system according to claim 31 in which optionally the means for forming the first self-assembly alignment promoting material selectively directed over the first patterned region includes means for performing a reaction that is preferred to a material of the first patterned region over a second material other than the second patterned region.
[000117] Example 33 is an integrated circuit substrate or other apparatus manufactured by the method of any one of Examples 1 to 13.
[000118] Example 34 is a manufacturing system for carrying out the method of any one of Examples 1 to 13.
[000119] Example 35 is a system that includes means for carrying out the method according to any one of Examples 1 to 13.
[000120] Example 36 is an integrated circuit substrate or other apparatus manufactured by the method of any one of Examples 26 to 30.
[000121] Example 37 is a manufacturing system for carrying out the method of any one of Examples 26 to 30. Example 38 is a system that includes means for carrying out the method according to any one of Examples 26 to 30.
[000122] In the following description, for the purposes of explanation, several specific details are presented in order to provide a complete understanding of the present invention. It will be evident, however, to a person skilled in the art that one or more other modalities can be practiced without some of these specific details. The particular embodiments described are not provided to limit the invention, but to illustrate them. The scope of the invention is not to be determined by the specific examples given above, but only by the claims below. In other examples, well-known structures, devices, and operations have been shown in block diagram form or without details in order to avoid obscuring the understanding of the description. Where deemed appropriate, reference numerals or terminal portions of reference numerals have been repeated between the Figures to indicate corresponding or analogous elements, which may optionally have similar characteristics.
[000123] It should also be noted that the reference throughout this descriptive report to "one (1) modality", "a modality" or "one or more modalities", for example, means that a particular resource can be included in the practice of the invention. Similarly, it should be noted that in the description, several resources are sometimes grouped together in a single modality, Figure or description of them with the purpose of simplifying the disclosure and assisting in the understanding of several inventive aspects. However, this method of disclosure is not to be construed as reflecting an intention that the claimed invention requires more features than are expressly cited in each claim. On the contrary, as the following claims reflect, inventive features are found in fewer features than all features of a single disclosed embodiment. Accordingly, the following claims in the Detailed Description are hereby expressly incorporated into that Detailed Description, with each claim held by itself as a separate embodiment of the invention.

权利要求:
Claims (25)
[0001]
1. Method of fabrication characterized in that it comprises: forming a self-assembly alignment promoting layer directed onto a surface of a substrate (308, 508, 808) having a patterned first region (310, 510, 710, 810) and a second patterned region (312, 512, 712, 812), forming the directed self-assembly alignment promoting layer including forming a first selectively directed self-assembly alignment promoting material over the first patterned region (310, 510, 710, 810), the formation of the first self-assembly alignment promoting material selectively directed over the first patterned region (310, 510, 710, 810) is performed without the use of lithographic patterning; and forming an assembled layer (319, 519) over the directed self-assembly alignment promoting layer by directed self-assembly, forming the assembled layer (319, 519) including forming a plurality of assembled structures (320, 520, 820), wherein each predominantly includes a first type of polymer over the first directed self-assembly alignment-promoting material and which are each adjacently surrounded predominantly by a second different type of polymer over the second patterned region (312, 512, 712 , 812), the first directed self-assembly alignment-promoting material having a greater chemical affinity with the first type of polymer than with the second different type of polymer.
[0002]
2. Method according to claim 1, characterized in that the formation of the first self-assembly alignment promoting material selectively directed over the first patterned region (310, 510, 710, 810) comprises performing a reaction that is preferred for a material of the first patterned region (310, 510, 710, 810) over a second material other than the second patterned region (312, 512, 712, 812).
[0003]
3. Method according to claim 2, characterized in that one of the material of the first patterned region (310, 510, 710, 810) and the second material is different from the second patterned region (312, 512, 712, 812 ) is a metal material and the other is a dielectric material.
[0004]
4. Method according to claim 2, characterized in that carrying out the reaction comprises at least one of: reacting at least one of an aminosilane, a halosilane and an alkoxysilane with hydroxy groups of the first standardized region (310, 510 , 710, 810); reacting a functional group of a polymer with the hydroxy groups of the first patterned region (310, 510, 710, 810); reacting a phosphonic acid with a metal of the first patterned region (310, 510, 710, 810 ); reacting a thiol with the metal of the first patterned region (310, 510, 710, 810); reacting at least one of triazole and a corrosion inhibitor with the metal of the first patterned region (310, 510, 710, 810); reacting 1, 2, 4 triazoles with patterned first region metal (310, 510, 710, 810); reacting a heterocycle corrosion inhibitor with patterned first region metal (310, 510, 710, 810); and reacting a multifunctional electrophile with hydroxy groups from the first standardized region (310, 510, 710, 810).
[0005]
5. Method according to claim 1, characterized in that forming the first self-assembly alignment promoting material selectively directed over the first patterned region (310, 510, 710, 810) comprises: introducing the first self-assembly alignment promoting material directed over the top surfaces of both the first and second patterned regions, the top surface of the first patterned region (310, 510, 710, 810) is recessed relative to the top surface of the second region standardized (312, 512, 712, 812); and removing the first directed self-assembly alignment promoting material from the top surface of the second patterned region (312, 512, 712, 812), while leaving the first self-assembly alignment promoting material directed over the top surface of the first patterned region (310, 510, 710, 810).
[0006]
6. Method according to claim 5, characterized in that the removal of the first directed self-assembly alignment promoting material comprises performing at least one of cauterization, chemical mechanical polishing and a heat treatment to remove the first promotion material self-assembly alignment tool.
[0007]
7. Method according to claim 5, characterized in that it further comprises, after the formation of the first self-assembly alignment promoting material selectively directed over the first patterned region (310, 510, 710, 810), form a second different directed self-assembly promoting material selectively over the second patterned region (312, 512, 712, 812), but not over the first patterned region (310, 510, 710, 810), performing a reaction that is preferable to a top surface material of the second patterned region (312, 512, 712, 812) compared to the first directed self-assembly alignment promoting material that remains on the top surface of the first patterned region (310, 510, 710 , 810).
[0008]
8. The method of claim 1, characterized in that forming the directed self-assembly alignment promoting layer comprises: forming the first directed self-assembly alignment promoting material selectively over a metal material of the first patterned region (310, 510, 710, 810), the first directed self-assembly alignment promoting material having greater chemical affinity with the first type of polymer than with the second type of polymer; and form a second selectively different directed self-assembly promoting material over a patterned second region dielectric material (312, 512, 712, 812), the second directed self-assembly alignment promoting material having one of a greater chemical affinity with the second type of polymer than with the first type of polymer and substantially identical chemical affinity with the first and second types of polymer.
[0009]
9. Method according to claim 1, characterized in that forming the first self-assembly alignment promoting material selectively directed over the first patterned region (310, 510, 710, 810) comprises: introducing the first self-assembly alignment promoting material directed over both the first and second patterned regions, wherein the first patterned region (310, 510, 710, 810) is more porous than the second patterned region (312, 512, 712, 812) ; inserting the first directed self-assembly alignment promoting material into the pores of the first patterned region (310, 510, 710, 810); removing the first directed self-assembly alignment promoting material from the second patterned region (312, 512, 712, 812), while leaving the first self-assembly alignment promoting material directed into the pores of the patterned first region (310, 510, 710, 810).
[0010]
10. The method of claim 1, further comprising forming a second self-assembly alignment promoting material selectively directed over the second patterned region (312, 512, 712, 812), but not over the first patterned region (310, 510, 710, 810).
[0011]
11. Method according to claim 1, characterized in that the formation of the directed self-assembly alignment promoting layer is on an interconnecting line of one of the first and second patterned regions having a width of no more than 20 nanometers.
[0012]
12. Method of fabrication according to claim 1, further comprising: introducing a first directed self-assembly alignment promoting material on top surfaces of the first patterned region (310, 510, 710, 810) and a second patterned region (312, 512, 712, 812) of the surface of a substrate (308, 508, 808), the top surface of the first patterned region (310, 510, 710, 810) is recessed relative to the surface of top of the second patterned region (312, 512, 712, 812); removing the first directed self-assembly alignment promoting material from the top surface of the second patterned region (312, 512, 712, 812) while leaving the first material to directed self-assembly alignment promoting on the top surface of the first pattern region (310, 510, 710, 810); after removing the first directed self-assembly alignment promoting material from the top surface of the second pattern region (312, 512, 712, 812), form a second selectively different directed self-assembly promoting material on the top surface of the second patterned region (312, 512, 712, 812) performing a reaction that is preferable for the surface the top surface of the second patterned region (312, 512, 712, 812) compared to the first directed self-assembly alignment promoting material, which remains on the top surface of the first patterned region (310, 510, 710, 810); assembling a layer including at least two different polymeric materials on top of the first and second directed self-assembly alignment promoting materials.
[0013]
13. Method according to claim 12, characterized in that the introduction comprises introducing a first polymer brush material onto the top surfaces of the first and second patterned regions, wherein the first polymer brush material comprises a polymer with one or more reactive groups proximate an end thereof, further comprising reacting a portion of the first polymer brush material with the top surfaces of the first and second patterned regions, and wherein to form the second polymer-promoting material. selectively different directed self-assembly on the top surface of the second patterned region (312, 512, 712, 812) comprises reacting a second different polymer brush material with the top surface of the second patterned region (312, 512, 712, 812).
[0014]
14. The method of claim 13, further comprising: retaining an unreacted portion of the first polymer brush material that has not reacted with the top surface of the first patterned region (310, 510, 710 , 810), over the first patterned region (310, 510, 710, 810) until after removing the first polymer brush material from the top surface of the second patterned region (312, 512, 712, 812); and after removing the first polymer brush material from the top surface of the second patterned region (312, 512, 712, 812), remove the unreacted portion of the first polymer brush material from the first patterned region (310, 510, 710 , 810).
[0015]
15. Method according to claim 12, characterized in that one of the top surfaces of the first and second patterned regions comprises a metal material and the other comprises a dielectric material.
[0016]
16. The method of claim 15, characterized in that the first and second directed self-assembly alignment promoting materials comprise different polymer brush materials, and wherein the removal of the first self-assembly alignment promoting material directed from the top surface of the second patterned region (312, 512, 712, 812) comprises performing at least one of cauterization and chemical mechanical polishing.
[0017]
17. Integrated circuit substrate characterized in that it comprises: a substrate (308, 508, 808), a substrate surface (308, 508, 808) having a first patterned region (310, 510, 710, 810) having a first material and a second patterned region (312, 512, 712, 812) having a different second material; a directed self-assembly alignment promoting layer including a first self-assembly alignment promoting material selectively directed over the first patterned region ( 310, 510, 710, 810); and an assembled layer (319, 519) over the directed self-assembly alignment-promoting layer, the assembled layer (319, 519) including a plurality of assembled structures (320, 520, 820), each predominantly including a first type of polymer on the first directed self-assembly alignment promoting material, and each is adjacent predominantly surrounded by a second different type of polymer on the second patterned region (312, 512, 712, 812), the first directed self-assembly alignment having a greater chemical affinity with the first type of polymer than with the second type of polymer.
[0018]
18. Integrated circuit substrate according to claim 17, characterized in that the first directed self-assembly alignment promoting material is a reaction product of a precursor material that has the ability to preferentially react with the first material in comparison with the second material.
[0019]
19. Integrated circuit substrate according to claim 18, characterized in that the first material is a metal material and the second material is a dielectric material.
[0020]
20. Integrated circuit substrate according to claim 19, characterized in that the first directed self-assembly alignment promoting material has greater chemical affinity with the first type of polymer than with the second type of polymer, and further comprises a second directed self-assembly promoting material selectively different over the dielectric material, wherein the second directed self-assembly alignment promoting material has one of a greater chemical affinity with the second type of polymer than with the first type of polymer and a substantially identical chemical affinity with the first and second types of polymers.
[0021]
21. Integrated circuit substrate according to claim 18, characterized in that the first material is a dielectric material and the second material is a metal material.
[0022]
22. The integrated circuit substrate of claim 17, wherein the directed self-assembly alignment promoting layer comprises a second self-assembly alignment promoting material selectively directed over the second patterned region (312, 512, 712, 812), but not over the first patterned region (310, 510, 710, 810).
[0023]
23. Integrated circuit substrate according to claim 12, characterized in that the second directed self-assembly alignment promoting material is a reaction product of a precursor material that has the ability to preferentially react with the second material in comparison with the first targeted self-assembly alignment promotion material.
[0024]
24. Integrated circuit substrate according to claim 17, characterized in that a top surface of one of the first and second patterned regions is recessed relative to a top surface of the other, wherein the first material is a metal material and the second material is a dielectric material, wherein the first directed self-assembly alignment promoting material comprises a first polymer material, and further comprises a second polymer material different from the directed self-assembly alignment promoting layer selectively over the second patterned region (312, 512, 712, 812).
[0025]
25. The integrated circuit substrate of claim 17, characterized in that the first material is more porous than the second material, and wherein the first directed self-assembly alignment promoting material is included in the pores of the first material .

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TWI592990B|2017-07-21|

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GB2530193A|2016-03-16|

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TW201515063A|2015-04-16|

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US20160351449A1|2016-12-01|

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KR20160024357A|2016-03-04|

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BR112015029548A2|2017-07-25|

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WO2014209327A1|2014-12-31|

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CN105474359A|2016-04-06|

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CN105474359B|2019-04-12|

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GB201520310D0|2015-12-30|

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DE112013007056T5|2016-03-17|

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GB2530193B|2020-01-01|

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