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    • 专利摘要:
    A low noise infrared photodetector having an epitaxial hetero-structure which includes a photodiode and a transistor. The photodiode has a narrow band gap, high sensitivity photodetector layer of a first conductivity type, and a collection well of a second conductivity type in contact with the photodetector layer. The transistor has the collection well, a transfer well of a second conductivity type which is separate from the collection well and the photodetector layer, and a region of a first conductivity type between the collection well and that of. transfer. 25 26 27 28 29 30 31 32
    公开号:BE1022696B1
    申请号:E2014/0341
    申请日:2014-05-12
    公开日:2016-08-01
    发明作者:John Alfred Trezza
    申请人:Sensors Unlimited Inc.；
    IPC主号:
    专利说明:

    LOW NOISE HYBRID DETECTOR USING LOAD TRANSFER
    BACKGROUND OF THE INVENTION
    This invention generally relates to a device for detecting radiation in the near infrared (IR) spectrum. In particular, the invention relates to a low noise IR detector that operates by transferring charges rather than charging and resetting a capacitor through which the voltage is read.
    Modern infrared (IR) imaging systems can be focal plane arrays of detectors and integrated circuit systems, associated in each pixel that transform the collected signals into visual forms or other analyzable forms. Near-IR radiation detection systems operating in the 1 to 1.7 μm wavelength range are sometimes combined with visible light detection systems that operate in a wavelength range of 400 to 700 nm to improve detection and visualization in scenarios with little light and darkness. The combined capability of visible imaging and near-IR imaging is becoming a strategic requirement for both commercial and military applications. Among the many materials used for imaging systems that operate in near-infrared (eg, HgCdTe, Ge, InSb, PtSi, etc.), InGaAs pin photodiodes were chosen because of their high performance and reliability (G. Olsen, et al., "A 128X128 InGaAs detector array for 1.0-1.7 microns", in SPIE Proceedings, Vol 1341, 1990, pages 432-437).
    Short wavelength infrared (SWIR) imaging matrices are normally hybrid devices in which the photodiodes are interconnected to the integrated reading circuit (ROIC) of a silicon transistor. In an effort to reduce costs and simplify complex fabrication, an InGaAs / InP photodiode was integrated into a junction field effect InP transistor (JFET) as a switching element for each pixel, as described in FIG. U.S. Patent No. 6,005,266, Forrest et al. (fully incorporated by reference in this application). The combination of photodiodes and FETs on a single substrate enables the formation of completely monolithic near IR focal plane arrays at reduced production cost and increased performance. InP junction field effect transistors have leakage currents as reliable as 2pA. In related work, it is found that the intentional doping of the p-i-n GaAs photodiode absorption layer reduces the dark current, as described in US Patent No. 6,573,581, Sugg. et al., (integrally incorporated by reference in the present application).
    In the previous detectors, the light-induced charge is collected in a single area which is then transferred to an external capacitor on which the voltage is measured. The capacitor is then "reset" before the next measurement. Since it is difficult to completely reset a capacitor in a limited period of time, and the collection area may be collecting charges during the read operation itself, it is possible to have variations in the quantity of the signal read. ABSTRACT
    An infrared photodetector has a first narrow bandgap layer of a first conductivity type; a first wide-band gap layer of a first conductivity type overlying the photodetector layer; a collector well of a second conductivity type in the first wide band gap layer and in contact with the first narrow bandgap layer so that the first narrow bandgap layer and the collection well form a photodiode infrared; a transfer well of a second type of conductivity in the first. wide bandgap layer separated from the collection well and the first narrow bandgap layer; and a transistor having the collection well, the transfer well and a region between the collection well and the transfer well.
    In one embodiment, an infrared photodetector has a first narrow band gap of a first conductivity type, a first band gap layer of a first conductivity type on the narrow band gap layer, a second layer a wide bandgap of a first conductivity type on the wide bandgap layer, and a second narrow bandgap layer of a first type of conductivity on the second bandgap layer. A transfer well of a second conductivity type is located in the first narrow bandgap layer and the first wide bandgap layer. A transfer well of a second conductivity type is located in the first wide bandgap layer and separated from the collection well. The electrodes on the second narrow bandgap layer are placed to cause charge transfer from the collection well to the transfer well.
    In another embodiment, a method for forming an infrared photodetector includes depositing a first wide-band gap layer of a first conductivity type on a narrow band gap layer of a first conductivity type and the deposit a second wide-bandgap layer of a first conductivity type on the first wide-bandgap layer. A collector well of a second conductivity type is formed by diffusion in the first narrow bandgap layer, the first wide bandgap layer, and the second bandgap layer. A transfer well of a second conductivity type is diffusion formed in the first and second wide bandgap layers and is separated from the collection well and the first narrow bandgap layer. The electrodes on the narrow bandgap layer are placed to allow charge transfer from the collection well to the transfer well.
    BRIEF DESCRIPTION OF THE DRAWINGS
    FIG. 1 is a schematic illustration of the architecture of a photodetector / transistor device of the invention.
    FIGS. 2A-2C are illustrations showing the operation of the photodetector of the invention.
    FIG. 3 is a schematic illustration of the photodetector and the integrated reading circuit (ROIC) reported of the invention.
    FIGS. 4A-4J are schematic illustrations of the training steps of the invention.
    FIG. 5-8B shows alternative versions of the photodetector / transistor device.
    DETAILED DESCRIPTION
    FIG. 1 shows the device 30, which comprises an integrated PD photodetector and a low-noise, epitaxial, multilayer and field-effect transistor T1. This architecture of the device employs a charge collection area and a different area for measuring charge. In addition, a capacitor is not needed to measure the signal level.
    Although the photodetector device 30 will be described in terms of InGaAs / InAlAs / InP material and device technology, the methods and features discussed herein do not purport to be limited only to this material system, and other semi-composite materials. Conductors III-V and II-VI are included within the scope of the invention.
    The device 30 is a multilayer structure comprising a broadband n-type substrate base or layer 32, a narrow-band n-type photocaptive layer 34, an ultra-wideband n-type layer 36, n-type wide-band-pass type 38, a narrow-band n-type passivation layer 40, a p-type collection well 42, a p + type transfer well 44, a source contact 46, a gate contact transfer 48, and a drain contact 50. The n-type layer 34 and the collection well 42 form a short wavelength PD photodiode (SWIR). The layers 38 and 40, the collection well 42, the transfer well 44, the source electrode 46, the transfer gate electrode 48 and the drain electrode 50 form a junction field effect transistor 10 (JFET ) Tl.
    In an embodiment, the n-wide n-type basecoat layer 32 is of InP with a thickness of about 0.05 μκι, a doping concentration of about 1.0ei8 and a forbidden band of about 1.344 ev. . The narrow-band n-type layer 34 is made of InGaAs with a thickness of about 2.7 μm, a doping concentration of about 0.1 μg to 1.0 μg and a forbidden band of about 0.74 ev. The n-type layer with a wide bandgap 36, is in
    In x Al-xAs with a thickness of about 0.4 μm, a doping concentration of about 1.06 and a band gap of about 1.4 6 ev. The wide-band n-type layer 38 is made of InP with a thickness of about 0.1 μm, a doping concentration of about 1.07 and a forbidden band of about 1.344 ev. The narrow-band n-type passivation layer 40 is of In x Ga 1-x As with a thickness of about 0.05 μm, a doping concentration of 1.0 μl and a forbidden band of about 0.740 ev.
    In this embodiment, the P-collector well 42 is diffusion formed in the layers 34, 36, and 38. Therefore, the collector well 42 has a three-layer structure that includes the layers 42A, 42B, and 42C. The layer 42A of the collection well 42 is made of InxGai-xAs with a thickness of about 0.1 μm, a doping concentration of about 1.06 and a forbidden band of about 0.74 ev. The layer 42B of the collection well 42 is made of InxAli-xAs with a thickness of about 0.4 μm, a doping concentration of about 1.06 and a band gap of about 1.46 ev. The 42C layer of the collection well 42 is InP with a thickness of about 0.05 to 0 μm, a doping concentration of about 1.06 and a forbidden band of about 1.344 ev. Transfer well 44 is diffusion formed in layers 36 and 38. Therefore, transfer well 44 has a two-layer structure that includes layers 44A and 44B. The layer 44A of the transfer well 44 may be of InxAli-xAs with a thickness of about 0.2 μm, a doping concentration of about 1.06 and a forbidden band of about 1.46 ev. The layer 44B of the transfer well 44 is made of InP with a thickness of about 0.05 to 0 μm, a doping concentration of about 1.07 and a forbidden band of about 1.344 ev. The source electrode 46, the transfer gate electrode 48, and the drain electrode 50 may be Au, Cu, Ag, Pd, Pt, Ni and other materials known in the state of the invention. technical.
    On FIGS. 2A-2C schematic figures can be seen which illustrate the operation of the device 30. The device operates by collecting photo-induced carriers in a P type collection well 42 of the photodiode Tl. The collected charge is transferred by the transistor Tl from the collection well 42 (which acts as a Tl source) to the transfer well 44 (which acts as a Tl drain). The charge in the transfer well 44 can then be read without affecting the generation and collection of carriers by the PD photodiode.
    In FIG. 2A, the SWIR radiation is absorbed in the photodetector layer 34 of high sensitivity and produces photoinduced carriers. In FIG. 2B, the carriers are routed to the collection well 42, as indicated by the arrows a, and are scanned through the pn junction formed by the n-type photodetecting layer 34 and the collection well 42. As shown in FIG. 2C, the carriers in the well 42 are then transferred to the transfer well 44, as schematically illustrates the arrow d. A positive voltage on the transfer gate electrode 48 inverts the very wide bandgap undercurrent layer 36 to the p-type between the collection well 42 and the transfer well 44. This allows the charges c in the well collectors 42 move to the transfer well 44. The charges in the transfer well 44 can then be sampled by an external circuit ROIC. There is a complete load transfer without any reset noise being generated during the transfer.
    FIG. 3 illustrates the device 30 with a portion of the ROIC circuit system. The transistor T1 of the device 30 forms a transistor of the architecture of five transistors (5T) used by the ROIC to acquire the photo-signal generated by the photodiode PD of the device 30 for reading measurements. In a SWIR matrix, there will be a matrix of devices 30 and associated 5T circuits. The 5T circuits deliver photo signals to the circuit systems responsible for reading measurements and other signal processing (not shown).
    The circuit 5T of FIG. 3 comprises T1-T5 field effect transistors and an optical capacitor C1. Transistor T2 is a reset transistor that is activated to reset the device 30 for the next charge transfer and the read cycle by connecting the transfer well. 44 on the ground. This resets the transfer well 44 before the next carrier transfer from the collection well 42.
    The transistor T3 has its gate contact connected to that of the drain 50 of the device 30. The transistor T3 acts as a source follower whose source voltage is a function of the charge in the transfer well 44.
    Transistors T4 and T5 are sample and column select switches, respectively, which select the photo-signal being supplied to the photo-signal being supplied to the additional circuit system. ROIC. Capacitor C1 is employed if desired to make sample and column selections sequentially rather than simultaneously. In this case, the voltage in the source of T3 is stored in the capacitor C1 and then read by turning on the column selection transistor T5.
    One method for forming the device 30 is illustrated in FIGS. 4A-4J. The starting material illustrated in FIG. 4A is a multilayered hetero-structure consisting of layers 32, 34, 36, 38 and 40. By way of example, layers 32 and 38 may be InP; layer 34 may be of InxGai-xAs; and the layer 36 may be of InxAly Gaa- (x + y)) As. The compositions, thickness, and doping levels of a particular embodiment have already been described. The hetero-structure may be formed by any epitaxial growth method known in the art. Examples include organometallic vapor phase epitaxy (OMVPE), organometallic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and others known in the art. A preferred technique would be MOCVD.
    In the next step, as shown in FIG. 4B, a diffusion barrier layer 52 is deposited on the upper layer 38 provided with a window 53 to allow the deposition of the doping material on a portion of the layer 38 through the doping window 53. The diffusion barrier layer 52 may be a nitride, photoresist, or other barrier material known in the art.
    As illustrated in FIG. 4C, a first diffusion then allows the doping to form a collection well 42 of type p. The depth of the diffuse p-type well 42 intentionally extends through the layer 36 so that it contacts the narrow-band photodetective layer 34.
    The diffusion barrier layer 52 is then removed, as shown in FIG. 4D and the second diffusion barrier layer 54 provided with a window 55 is deposited on the wide bandgap layer 38, as shown in FIG. 4E. A second diffusion then allows the doping to form a p + type transfer well 44, as shown in FIG. 4F.
    In the next step illustrated in FIG. 4G, the diffusion barrier layer 54 is removed, and the surface prepared for the next layer deposition process.
    As illustrated in FIG. 4H, an additional InP overgrowth is allowed to form on the charge well 42 and the collection well 44 to bury the two wells in the InP material of the layer 38. The n-pass passivation layer A narrow gap 40 is then deposited on layer 38, as shown in FIG. 41.
    In the final step, as shown in FIG. 4 J, the contact regions are defined by photolithography and the source contact 46, the transfer gate contact 48, and the drain contact 50 are deposited on the narrow bandpass passivation layer 40. The contacts 46, 48, and 50 are deposited by photolithography, sputtering, electroplating or other deposition means known in the state of the art. The preferred contact materials are Au, Cu, Ag, Pd, Pt, Ni and other materials known in the state of the art.
    Alternative versions 30A-30D of the photodetector / transistor device are illustrated in FIGS. 5-8B. In the device 30A of FIG. 5, the transfer well 44 extends from the upper surface of the layer 40 through the layer 38 into the layer 36. The drain contact 50 is in direct contact with the transfer well 44. With this configuration the transfer well can be emptied immediately after the load is read.
    In FIG. 6, the device 30B has a p + diffusion region 60 which connects the transfer well 44 to the upper surface of the layer 40. The region 60 connects the drain contact 50 to the transfer well 44. The advantage of this configuration c The transfer well can be emptied immediately after the load is read.
    The device 30C is schematically illustrated in FIG. 7. The device 30C includes a p + 62 dump well and a second transfer gate electrode 64. Once the charge of the transfer well 44 has been read, the charge can be transferred ("dumped") into the "well". emptying 62 to empty the transfer well 44. This indeed adds a second transistor to the device.
    The device 30D is schematically illustrated in FIGS. 8A and 8B. In the device 30D both, the p-type collection well 42 and the p + type transfer well 44 extend to the upper surface of the layer 40. The source contact 46 and the contact drain 50 are in direct contact with the p-type collection well 42 and the p + type transfer well 44, respectively, and form Schottky barrier diode contacts. By applying reverse bias to the contacts 46 and 50, depletion regions under the contacts can be created by transforming the regions 66 and 68 into n-type surface regions, effectively burying the collector well p 42 and the well. p + 44 transfer under the carrier migration barrier layers resulting in a decrease (or suppression) of surface noise.
    After the charges collected in the transfer well 44, the bias voltage on the contact 50 that created the carrier migration barrier layer 68, as shown in FIG. 8A, can be changed to remove the Schottky barrier. As illustrated schematically in FIG. 8B the carriers in the transfer well 44 can then be extracted through the drain 50. In another embodiment, the collection well 42 can remain buried under the barrier layers against the migration of carriers 38 and 40, as on FIG. 4J, while the transfer well 44 can extend to the surface, as in FIG. 5. In this case, the drain contact 50 and the transfer well 44 may form a polarized Schottky barrier to create a barrier against carrier migration, as in FIG. 8A, until the carriers of the transfer well 44 are to be extracted.
    The photodetector / transistor structure shown in FIGS. 1 and 5-8B offers some advantages and design features, including:
    The charging well 42 may be a buried p-type diffusion layer, and surrounded by a bandgap engineering material detailed on all sides except for the charge collection region. This allows the charge to be collected while maintaining a low collected dark current and separating the collection area from the surface of the InGaAs material. This buried layer minimizes surface recombination as much as the contribution of the shunt to noise.
    The charge well 42 and the transfer well 44 may form a dual diffusion / regrowth structure. They have two p-type regions with different depths and concentrations of doping. This combination allows as much full charge transfer as isolation of the transfer region of the photo-current generation region. This is vital for ultra low noise read performance.
    Instead of an FET 30, a p-n-p transistor can be used to transfer the charge from the collection well to the transfer well. All of these features, as well as a mechanism for emptying the load of the transfer well 44 can be included in 5-8 micrometer pixels.
    By avoiding the resetting noise of the prior art capacitor, the inherent noise of the pixel may be several orders of magnitude less than that of the prior art devices. The architecture of the present invention can achieve five times (5X) higher sensitivity by allowing night imaging below the light levels of the stars at a time that reduces the pixel pitch three times (3X). As a result, the detectors can operate under lower light conditions; operate at higher operating temperatures for a given light level; operate at a lower power level because there is no need to cool them to improve performance, for example; and allow higher resolution in a smaller detector with smaller optics and higher density per chip surface area on a wafer, resulting in reduced costs.
    Discussion of possible embodiments
    The following are non-exclusive descriptions of possible embodiments of the present invention.
    An infrared photodetector has a first narrow bandgap layer of a first conductivity type; a first wide-band gap layer of a first conductivity type overlying the photodetector layer; a collector well of a second conductivity type in the first wide bandgap layer and in contact with the first narrow band gap layer, so that the first narrow bandgap layer and the collection well form a infrared photodiode; a transfer well of a second conductivity type in the first wide bandgap layer and separated from the collection well and the first narrow bandgap layer; and a transistor having the collection well, the transfer well and a region between the collection well and the transfer well.
    The photodetector of the preceding paragraph may optionally comprise, additionally and / or alternatively one or more of the following characteristics, configurations and / or components:
    The transistor may include a first electrode coupled to the collection well, a second electrode coupled to the transfer well, and a third electrode coupled to the region between the collection well and the transfer well. The first, second and third electrodes may be Ti, Pt, Au, Ni, Cu, or combinations thereof.
    The second wide-bandgap layer of a first conductivity type may cover the first wide-bandgap layer.
    The collection well may be a buried structure, connected to the first narrow band gap layer on one side and almost entirely surrounded by the prohibited first and second broadband layers.
    The transfer well may be a buried structure within the first and second broadband banned layers.
    A second narrow band gap layer of a first conductivity type may cover the second wide bandgap layer.
    The transfer well may extend to an upper surface of the second narrow bandgap layer. The collection well may extend to an upper surface of the second narrow bandgap layer. A dump well of a second conductivity type may be in the first wide bandgap layer and separated from the narrow band gap layer and the transfer well.
    An infrared photodetector may include a first narrow bandgap layer of a first conductivity type; a first wide bandgap layer of a first conductivity type which may be on the first bandgap layer; a second wide-bandgap layer of a first conductivity type that may be on the first wide-bandgap layer; a second narrow bandgap layer which may be on the second wide bandgap layer; a collector well of a second conductivity type which may be located in the first narrow bandgap layer and the first wide bandgap layer; a transfer well of a second conductivity type which may be located in the first wide bandgap layer; and electrodes on the second narrow bandgap layer which may be located to cause charge transfer from the collection well to the transfer well.
    The photodetector of the preceding paragraph may optionally include, additionally and / or alternatively one or more of the following characteristics, configurations and / or components:
    The collection well may be a buried structure that extends into the first narrow bandgap layer and is almost entirely surrounded by the prohibited first and second broadband layers. .
    The transfer well may be a buried structure in the first and second wide bandgap layers.
    The collection well may extend to an upper surface of the second narrow bandgap layer. The transfer well may extend to an upper surface of the second narrow bandgap layer.
    A dump well of a second conductivity type may be in the first broad bandgap layer and separated from the first narrow bandgap layer and the transfer well.
    A method for forming an infrared photodetector may include: depositing a first narrow band gap layer of a first conductivity type; depositing a first wide-band gap layer of a first conductivity type on the first narrow band gap layer of a first conductivity type; depositing a second wide-bandgap layer of a first conductivity type on the first wide-bandgap layer; diffusion forming of a second conductivity type collector well located in the first narrow bandgap layer, the first wide bandgap layer, and the second bandgap layer; and diffusion forming a second conductivity type transfer well located in the first and second wide bandgap layers and separated from the collection well and the first narrow bandgap layer.
    The method of the preceding paragraph may optionally include, additionally and / or alternatively one or more of the following additional features, configurations and / or components:
    The second wide-bandgap layer may be deposited so that the collection well and the transfer well are buried.
    A second narrow bandgap layer may be deposited on the second wide bandgap layer.
    The electrodes may be formed on an upper surface of the second narrow band gap layer overlying the collection well, the transfer well, and a region between the collection well and the transfer well.
    Although the present invention has been described with reference to one or more exemplary embodiments, it will be understood that one skilled in the art may make any useful modification thereto and elements thereof may be substituted by equivalent elements. without departing from the scope of the invention. In addition, many modifications can be made to adapt a particular situation or material to the teachings of the invention without departing from the essential framework thereof. Therefore, it is intended that the invention is not limited to the particular embodiments disclosed, but instead covers all embodiments within the scope of the appended claims.
    权利要求:
    Claims (15)
    [1]
    An infrared photodetector comprising: a first narrow bandgap layer of a first conductivity type; a first wide bandgap layer of a first conductivity type overlying the first narrow bandgap layer of the first conductivity type; a collector well of a second conductivity type in the first wide bandgap layer and in contact with the first narrow bandgap layer so that the first narrow band gap layer and the collection well form an infrared photodiode; a transfer well of a second conductivity type in the first wide bandgap layer and separated from the collection well and the first narrow bandgap layer so that the transfer well is not in contact with the first narrow bandgap layer and so that the transfer well is separated from the collection well by a region of the first conductivity type in the first wide bandgap layer; and a transistor having the collection well, the transfer well and the region of the first conductivity type in the first wide bandgap layer between the collection well and the transfer well.
    [2]
    The structure of claim 1, wherein the transistor further comprises: a first electrode coupled to the collection well; a second electrode coupled to the transfer well; and a third electrode coupled to the region between the collection well and the transfer well.
    [3]
    The infrared photodetector of claim 2, wherein the first, second and third electrodes comprise Ti, Pt, Au, Ni, Cu, or a combination thereof.
    [4]
    The infrared photodetector of claim 1 which further comprises a second wide bandgap layer of a first conductivity type overlying the first wide bandgap layer.
    [5]
    The infrared photodetector of claim 4, wherein the collection well is a buried structure, connected to the first narrow band gap layer on one side, and almost completely surrounded by the prohibited first and second broadband layers.
    [6]
    The infrared photodetector of claim 4, wherein the transfer well is a buried structure within the prohibited first and second broadband layers.
    [7]
    The infrared photodetector of claim 4 and further comprising a second narrow band gap layer of a first conductivity type overlying the second wide band gap layer.
    [8]
    The infrared photodetector of claim 7 wherein the transfer well extends to an upper surface of a second narrow bandgap layer.
    [9]
    The infrared photodetector of claim 7 wherein the collection well extends to an upper surface of the second narrow bandgap layer.
    [10]
    The infrared photodetector of claim 1 which further comprises: a dump well of a second conductivity type in the first wide bandgap layer and separated from the narrow band gap layer and the transfer well.
    [11]
    An infrared photodetector comprising: a first narrow band gap layer of a first conductivity type; a first wide bandgap layer of a first conductivity type on the first narrow bandgap layer of a first conductivity type; a second wide-bandgap layer of a first conductivity type on the first wide-bandgap layer; a second narrow band gap layer on the second wide bandgap layer; a collector well of a second conductivity type located in the first narrow bandgap layer and the first wide bandgap layer; a transfer well of a second conductivity type located in the first wide bandgap layer but not in the first narrow bandgap layer; and electrodes on the second narrow band gap layer located to cause charge transfer from the collection well to the transfer well.
    [12]
    The infrared photodetector of claim 11, wherein the collection well is a buried structure that extends into the first narrow bandgap layer and is almost entirely surrounded by the first and second wide bandgap layers.
    [13]
    The infrared photodetector of claim 11, wherein the transfer well is a buried structure in the first and second wide bandgap layers.
    [14]
    The infrared photodetector of claim 11, wherein the collection well extends to an upper surface of the second narrow band gap layer.
    [15]
    The infrared photodetector of claim 11, wherein the transfer well extends to an upper surface of the second narrow bandgap layer.
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    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    US13/892,737|US8860083B1|2013-05-13|2013-05-13|Low noise hybridized detector using charge transfer|
    US13892737|2013-05-13|
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