• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    An injector (1), which is used in the manufacture of semiconductor components for introducing process gas into chambers, consists of silicon and has a channel (2) which has at least one widened region (3, 7, 10, 11, 24, 25). or a constriction in the form of an annular rib (8), so that in the process gas-containing particles which have been formed by chipping on the walls of the channel (2) deposits formed from the process gas and in the injector (1), in particular by Growth on the inner surface of the channel (2), retained and do not escape from the injector (1).
    公开号:AT520629A4
    申请号:T146/2018
    申请日:2018-05-22
    公开日:2019-06-15
    发明作者:Nadrag Walter；Nadrag Enrico；Binder Markus
    申请人:Sico Tech Gmbh；
    IPC主号:
    专利说明:

    The invention relates to an injector with the features of the introductory part of claim 1.
    In the manufacture of wafers, wafers are used in holders (boats) and placed in treatment rooms (ovens) in which they are treated with gas.
    The gas used to treat wafers is fed into the furnace via an injector, which is usually a curved or angled, perforated quartz glass tube.
    Gases (“process gases) that are used to treat wafers are, for example: a silane, for example trichlorosilane, silicon tetrachloride (SiCl 4 ), oxygen (0 2 ), hydrogen peroxide (H2O2) or tetraethyl orthosilicate (Si0 4 C8H 2 o).
    US 2006/0185589 A1 describes an injector made of silicon for gas, which can be used in the thermal treatment of semiconductor wafers. The drawings, for example FIG. 2 of US 2006/0185589 A1, show that the injector has a bore which is circular in cross section and is formed from half-shells. The outer shape of the tube is, for example, rectangular. 11 of US 2006/0185589 A1 it can be seen that the free end of the tube is closed and that outlet openings are provided in the tube. In US 2006/0185589 A1 the injector is composed of half shells, which is problematic under the conditions under which generic injectors are used.
    US 5,943,471 A is primarily concerned with the evaporation of solids for a CVD process. The device described in US Pat. No. 5,943,471 A comprises a hollow component which is connected to an injector which communicates with an inlet opening and a reaction chamber which contains the substrate.
    2.13
    In US 5,943,471 A there is no information about the material from which the components of the device for the CVD process can be made.
    US 2008/0286981 A1 is concerned with a method for treating semiconductor wafers in a process chamber, titanium nitride and silicon being deposited on the wafer in situ. For this purpose, in the embodiments shown in FIGS. 4 and 5 of US 2008/0286981 A1, injectors are provided in the process chamber, through which gas is introduced. Materials from which the injectors can be made are not disclosed. 8 of US 2008/0286981 A1 shows that injectors can have an elongated oval cross section. 7 also shows that the injectors can have lateral outlet openings. Such outlet openings are also shown in FIG. 8. US 2008/0286981 A1 contains no information about the material from which the injectors can be made.
    EP 0 582 444 A1 relates to a device for the CVD process with which it is produced with high purity. The device comprises three injector tubes, the construction of which is shown in FIG. 3. 3 of EP 0 582 444 A1, it can be seen that the injector tubes contain three concentric tubes which define annular channels. Only the middle channel is used to supply gas to a chamber. The outer channels are used for the circulation of cooling medium. EP 0 582 444 A1 also contains no information about the material from which the injectors can be made.
    US 2011/0274926 A1 shows in FIG. 8 an injector for silicon deposition from the gas phase (vapor deposition), which comprises a tube and a nozzle. The material for the injector includes Silicon mentioned. The tube of the injector has no outlet openings. Outlet openings are only provided in the nozzle. The nozzle is separate from the tube / 13
    ····· · ··· ·· ·· ···· · ···· ··
    Component that is attached to the end of the tube.
    EP 2 407 577 A2 shows a gas supply which has two gas lines for different gases in a cooling tube.
    US 2008/0035055 A1 shows an injector with a rectangular cross section and gas outlet openings in FIGS. 2 and 3.
    When treating wafers with a process gas, deposits can form on the wall of the channel in the injector due to reactions of the process gas or due to reactions in the process gas that can occur as it flows through the injector. Such deposits can interfere with the successful treatment of wafers if they exit the injector and enter the treatment room.
    The problem with the known injectors made of quartz glass is that deposits which form during the treatment process on the injector (made of quartz glass) can chip off due to thermal stresses and impair the correct manufacture of wafers.
    Chipping creates particles (flakings) that are not desired in processes in the semiconductor industry.
    The invention has for its object to provide an injector that does not cause the problems described.
    This object is achieved according to the invention with an injector which has the features of claim 1.
    Preferred and advantageous embodiments of the injector according to the invention are the subject of the dependent claims.
    / 13
    Thanks to the design of an injector according to the invention, there is no or at least a reduced discharge of particles from the injector.
    The reason for this is the measure provided according to the invention to provide areas in the channel of the injector whose cross-sectional area deviates from the cross-sectional area in another area of the channel in the injector, so that there are locations in the injector where deposits can preferably grow as a coating and chips off Deposits are at least largely avoided.
    An injector according to the invention consists in particular of silicon, which has the same thermal expansion factor as the resulting coating, namely 2.6. In contrast, silicon carbide has a thermal expansion factor of 4.8 and quartz has a thermal expansion factor of 0.5, making these materials less suitable for injectors.
    The injector according to the invention can be designed in one or more pieces, with a multi-piece design different connection types of the parts (pipe pieces) of the injector are possible. Examples include: A mechanical connection, a connection via connecting sleeves or high-temperature gluing.
    In the injector according to the invention, the shape of the inner cross sections of the tube forming the injector and the shape of the outlet openings of the injector are designed, in particular optimized, to influence, in particular to reduce, the velocity of the gas flowing through the injector, or by certain configurations according to the invention To create inner surfaces of the flow channel provided in the injector at least one area where deposits can grow.
    5/13 • ·
    In one embodiment of the injector according to the invention, care is taken to ensure that any particles that may have formed are retained in cutouts in the wall of the channel or by a special shape of the channel in the tube forming the injector.
    In embodiments of the injector according to the invention, shapes can be provided which specifically produce swirls in the gas flowing through the channel in the injector.
    Within the scope of the invention, shapes of the channel in the tube forming the injector are also considered, which have the effect of a cyclone separator and separate particles from the gas stream.
    Further details, features and advantages of the invention are described by way of example below with reference to the drawings. Show it:
    1 to 7
    8 to 12
    13 and 14 in longitudinal sections embodiments of injectors according to the invention,
    Outlet openings in the invention
    Injectors and further longitudinal sections according to the invention
    Injectors.
    In the injector 1 of FIG. 1 formed by a tube made of silicon, the velocity at which the gas flows is reduced at the end 4 of the injector 1 by a funnel-shaped extension 3 of the channel 2 through which the gas flows, so that If necessary, deposit particles on the surfaces 5 of the extended area 3 of the channel 2/13 ·· ♦ · · * ···· ·· ··: :: fc ·! »···· * ·· <o · · ··· ······ · · · ····· · ··
    ·· ·· ···· · ···· ·· can and thus be eliminated from the gas stream. The extension 3 can be conical, funnel or parabolic funnel-shaped.
    In the embodiment of the injector 1 shown in FIG. 2, the end of the channel 2 is formed with steps 6, so that a step-widening region 3 of the channel 2 results (enlargement of the cross-sectional area of the channel 2). In the embodiment of the injector 1 provided in FIG. 2, the edges of the steps 6 form traps for the particles that may be formed and, moreover, represent growth sites for bearings.
    In the embodiment of an injector 1 shown in FIG. 3, an extension 7 which extends to the end 4 of the injector 1 is provided, which in the exemplary embodiment shown in FIG. 3 is essentially spherical. Alternatively, the extension 7 can also be cylindrical and be provided at a distance from the end 4 of the injector 1.
    Fig. 4 shows a variant of the injector 1 of Fig. 3 with several, in the example three, spherical swirl chambers in the form of extensions 7, cylindrical extensions 7 as swirl chambers, such as those mentioned in Fig. 3, can also be provided here.
    In the embodiment shown in FIG. 5, at the end of the tube that forms the injector 1, a narrowing 8 of the cross-sectional area of the channel 2 is provided, which is formed by an annular projection 9 that projects inwards from the wall of the channel 2 , The annular projection 8 can, as shown in FIG. 5, have a rounded cross-sectional shape, but can also have an angular design.
    In the embodiment shown in FIG. 6, there are several / 13 in the area of the end 4 of the tube that forms the injector 1
    ···· annular grooves 10 are provided. In the case of Fig.
    shown
    Embodiment takes the depth of the grooves 10 to the end 4 of the
    Tube of the injector 1 towards. However, an embodiment is also considered in which the depth of all or individual grooves 10 is the same. These grooves 10 form cylindrical (disk-shaped) chambers, in which any particles that may form accumulate and where deposits can grow, so that
    Particles with the gas do not emerge from injector 1, or only escape to a reduced extent.
    In the embodiment shown in FIG. 7, cross-sectional enlargements 11 are provided at a distance from the end 4 of the tube that forms the injector 1, which act as traps for particles and achieve that deposits can separate and collect there. The cross-sectional expansions 11 are designed in such a way that their end lying downstream (flow direction of the gas arrow 12) forms a nose 13 directed opposite the flow direction.
    8, 9 and 10 show three different variants for outlet openings 20 at the end of the tube which forms the injector 1. The outlet openings 20 can be holes in silicon plates (FIG. 8), slits in silicon plates (FIG. 9) or holes in the silicon plate (FIG. 10) which result in a lattice.
    11 shows a front view of an injector 1 with a plurality of outlet openings 20 arranged in a circle.
    12 shows an injector 1 with an annular outlet channel 21.
    13 is an embodiment of an inventive
    Injector 1 shown, which has a plurality of outlet channels 22, baffle surfaces 23 and swirling spaces 24 in channel 2
    8.13
    are provided.
    FIG. 14 shows an injector 1 with a channel 2, which has a cyclone-like cavity 25, so that particles are separated in the region of the cyclone-like cavity 25 and do not emerge from the tube forming an injector 1.
    In summary, an embodiment of the invention can be described as follows:
    An injector 1, which is used in the manufacture of semiconductor components for introducing process gas into chambers, consists of silicon and has a channel 2, which has at least one expanded area 3, 7, 10, 11, 24, 25 or a constriction in
    Has the shape of an annular rib 8, so that particles contained in the process gas, which have been formed by chips from deposits formed on the walls of the channel 2, are separated from the process gas and retained in the injector 1, in particular by growing on the inner surface of the channel 2 and do not exit injector 1.
    权利要求:
    Claims (1)
    [1]
    Claims:
    Injector (1) for feeding gas into a
    Process chamber comprising a tube with a channel (2) with at least one outlet opening (20, 21) for the gas at the end (4) of the injector (1), the tube serving as injector (1) consisting of silicon, characterized in that that the channel (2) in the tube forming the injector (1) has at least one area with a cross-sectional area that has different dimensions than the cross-sectional area of the channel (2) in another area.
    Injector according to claim 1, characterized in that the cross-sectional area of the channel (2) is larger in the region of the end (4) of the tube forming the injector (1).
    Injector according to claim 1, characterized in that the cross-sectional area of the channel (2) is smaller in the region of the end (4) of the tube forming the injector (1).
    Injector according to claim 2, characterized in that the channel (2) has a funnel-shaped extension (3).
    Injector according to claim 4, characterized in that the extension (3) of the channel (2) is formed by steps (6).
    Injector according to claim 1 or 2, characterized in that at least one substantially spherical extension (7) is provided in the channel (2).
    Injector according to claim 6, characterized in that a plurality of spherical extensions (7) which merge into one another are provided.
    8. Injector according to claim 1 or 3, characterized in that at the end (4) of the tube forming the injector (1) a ring rib (8) reducing the cross section of the channel (2) is provided, which towards the center of the channel (2) protrudes.
    9. Injector according to claim 1 or 2, characterized in that in the region of the end (4) of the channel (2) at least one annular groove (10) is provided.
    10. Injector according to claim 9, characterized in that a plurality of grooves (10) are provided at a distance from one another.
    11. Injector according to claim 10, characterized in that the depth of the grooves (10) increases towards the end (4) of the tube forming the injector (1).
    12. Injector according to claim 1 or 2, characterized in that in the channel (2) at least one extended area (11) is provided and that the area (11) delimiting surface with one of the direction (arrow 12) of the gas flow through the Injector (1) forming tube against the nose (13) is formed.
    13. Injector according to one of claims 1 to 12, characterized in that baffles (23) and swirling spaces (24) are provided in the region of the end (4) of the tube forming the injector (1).
    14. Injector according to one of claims 1 to 13, characterized in that a cyclone-like cavity (25) is provided in the channel (2).
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    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    ATA146/2018A|AT520629B1|2018-05-22|2018-05-22|Injector made of silicon for the semiconductor industry|ATA146/2018A| AT520629B1|2018-05-22|2018-05-22|Injector made of silicon for the semiconductor industry|
    DE112019002606.2T| DE112019002606A5|2018-05-22|2019-05-16|SILICON INJECTOR FOR THE SEMICONDUCTOR INDUSTRY|
    PCT/EP2019/062618| WO2019224098A1|2018-05-22|2019-05-16|Injector made of silicon for the semiconductor industry|
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