• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
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    • 专利摘要:
    A semiconductor structure bonding apparatus is disclosed. The apparatus may include a leveling adjustment system configured to provide a leveling adjustment of upper and lower block arrangements of the apparatus. In some cases, the leveling adjustment system may include a plurality of threaded posts, differential thread adjustment collars, and leveling sleeves. In some cases, the leveling adjustment system may further include a plurality of biasing springs configured to provide a predetermined bias capacitance and a particular adjustment range. In some cases, the leveling adjustment system may further include a load cell through which a threaded post may be inserted. In some embodiments, the upper block assembly may further include a reaction plate configured to reduce deformation of the upper block assembly. In some embodiments, the upper block assembly may further include a thermal insulation panel configured to provide a yielding deflection and as needed of monolithic or polylithic construction.
    公开号:AT518338A2
    申请号:T50144/2017
    申请日:2017-02-23
    公开日:2017-09-15
    发明作者:
    申请人:Suss Microtec Lithography Gmbh；
    IPC主号:
    专利说明:

    CROSS-REFERENCE TO RELATED APPLICATIONS
    This patent application claims priority to US Provisional Patent Application No. 62 / 299,349, entitled "Simplified Apparatus and Method for Semiconductor Bonding," filed on Feb. 24, 2016, and is related to US Non-Provisional Patent Application No. 11 / No. 766,531, entitled "Apparatus and Method for Semiconductor Bonding," filed Jun. 21, 2007, now issued as US Pat. No. 7,948,034, dated May 24, 2011. Each of these patent applications and patents is incorporated by reference in its entirety in the present text.
    AREA OF REVELATION
    The present disclosure relates to a semiconductor bonding apparatus and method, and more particularly relates to a simplified, high-force semiconductor bonding apparatus and related method.
    BACKGROUND
    This disclosure relates to improvements in methods and apparatus described in commonly assigned US Pat. No. 7,948,034, the contents of which are hereby incorporated by reference herein as if they were included fully herein.
    Consumers are demanding ever-cheaper electrical and electronic devices. Much of the cost of manufacturing consumer electronics and electronics is the cost of the semiconductor devices that provide just those features, making electronic devices so popular with consumers. The manufacturers of semiconductor devices are therefore constantly looking for ways to reduce the manufacturing cost of semiconductors. A significant factor in determining the unit cost of semiconductor devices are defects that can occur in a particular production lot. It is understood that the loss of semiconductor devices by defects means a financial loss for the manufacturers, which can generally be made up by increasing the unit price. One area where defects in semiconductor device fabrication can arise is wafer or substrate bonding. In wafer bonding, heat, force and sometimes stress are applied to a stack of two or more aligned wafers in a controlled atmosphere. The goal of each wafer bonding is to form bonds of high integrity evenly over the entire wafer surface without affecting the alignment of the wafers with each other. Improved bonding integrity has been achieved by generating higher interfacial pressures. For improved bonding results, the interfacial pressure can be quite high, and thus it is desired that significant force be applied to the wafers to be bonded: for example, 100 kN to a 200 mm diameter wafer or 225 kN to a 300 mm diameter wafer , However, the high forces not only allow bonding, but also cause bending and warping of conventional bonding tools that apply forces, resulting in poor interfacial pressure uniformity, varying bond quality, wafer displacement, and post-bonding buckling so the improvements hoped for by using high bond forces will be lost again. In conventional systems, the pressure nonuniformity across the bonding interface can be nearly 50%.
    Accordingly, it would be desirable to provide a bonding device that could apply uniform pressure over the entire bonding interface. It would also be desirable to have a simplified, less expensive device than is currently available, and a device that is easier to set up and use than the prior art solutions.
    BRIEF SUMMARY OF THE INVENTION
    The subject matter of this application may in some cases include interrelated products, alternative solutions to a particular problem, and / or several different uses of a single system or product.
    An exemplary embodiment provides a semiconductor structure bonding apparatus comprising: a bottom block assembly including a first surface configured to deposit at least one semiconductor wafer thereon; an upper block assembly comprising a second surface adapted to be brought into contact with the first surface by application of bonding pressure to the at least one semiconductor wafer; and a leveling adjustment system configured to reference a leveling adjustment of the upper block assembly to make the lower block arrangement. The leveling adjustment system comprises: a first threaded post; a first differential thread adjusting collar surrounding the first threaded post; a first leveling sleeve surrounding the first differential thread adjusting collar; a second threaded post; a second differential thread Einstellbund, the second
    Threaded post surrounds, and a second leveling sleeve surrounding the second differential thread adjusting collar. In some cases, at least one of the first differential threads is
    Adjustment collar and the second differential thread Einstellbundes formed as a micrometer drive system having external threads of a first pitch and internal threads of a second pitch, which is different from the first pitch. In some such cases, the second pitch is about 0.5 mm less than the first pitch. In some cases, at least one of the first differential thread adjusting collar and the second differential thread adjusting collar is configured to have an effective pitch fineness of 1.0 mm or less. In some cases, at least one of the first leveling sleeve and the second leveling sleeve includes a shoulder portion adapted to receive a fastener such that the at least one of the first leveling sleeve and the second leveling sleeve is prevented from being raised during leveling adjustment of the upper block assembly to turn on the lower block assembly. In some cases, at least one of the first leveling sleeve and the second leveling sleeve includes a clamp integrally formed therewith and configured to provide a radial clamping force that reduces z-axis motion when tightened after the leveling adjustment of the upper block assembly with respect to the lower block assembly has been completed. In some cases, the apparatus further includes a mounting plate that is operatively coupled to the first threaded post and the second threaded post and that is configured to distribute a load from the upper block assembly to the first threaded post and the second threaded post, and the leveling adjustment system comprises Further, a plurality of biasing springs disposed between the mounting plate and at least one of the first Gewindepfostens and the second Gewindepfostens. In some such cases, at least one of the plurality of biasing springs is a disc or cone disc spring. In some other such cases, the plurality of biasing springs are configured to provide a preload force of at least 5 kN and / or an adjustment range of about ± 2 mm. In some cases, the leveling adjustment system further includes an upper spacer end stop disposed over at least one of the first threaded post and the second threaded post, formed within and configured for a respective one of the first differential thread adjusting collar and the second differential thread adjusting collar Attach fastener such that the fastener is physically coupled to the at least one of the first Gewindepfostens and the second Gewindepfostens. In some cases this includes
    Leveling adjustment system further comprises a third threaded post, which is designed as a non-adjustable gimbal attachment. In some cases, the leveling adjustment system further includes a third threaded post and a
    Load cell through which the third threaded post is inserted. In some such cases, the apparatus further includes a mounting plate operatively coupled to the first threaded post and the second threaded post and adapted to distribute a load from the upper block assembly to the first threaded post and the second threaded post, and the leveling adjustment system comprises Further, a gimbal jack, which is arranged between the load cell and the mounting plate and through which the third threaded post is inserted. In some other such cases, the leveling adjustment system further includes a cap disposed over the third threaded post and adapted to receive a fastener such that the fastener is physically coupled to the third threaded post.
    In some cases, the upper block assembly further includes a chuck configured to provide the second surface configured to be brought into contact with the first surface by applying bonding pressure to the at least one semiconductor wafer, and a reaction plate. disposed above the chuck and configured to reduce deformation of the upper block assembly, the reaction plate comprising a monolithic plate member and a plurality of concentric grooves defined in the monolithic plate member and adapted to receive a corresponding plurality of seals; The apparatus further comprises a plurality of ports configured to direct pressurized gas to a plurality of regions of the reaction plate. In some such cases, the plurality of concentric grooves of the reaction plate include: a first groove; a second groove concentrically outside the first groove; a third groove concentrically outside the second groove and a fourth groove concentrically outside the third groove and the plurality of ports are configured to direct pressurized gas to the plurality of regions of the reaction plate such that: when bonding 4 inch diameter semiconductor wafers of pressurized gas are directed to a first region defined between the first groove and the second groove; when bonding 6 inch diameter semiconductor wafers, pressurized gas is directed to the first region and a second region defined between the second groove and the third groove, and when bonding 8 inch diameter semiconductor wafers, pressurized gas to the first region which is routed to the second region and a third region defined between the third groove and the fourth groove. In some other such cases, a cut-out is defined in the reaction plate which is adapted to allow flexing of the reaction plate at this point.
    In some cases, the upper block assembly further includes a heat insulating plate disposed between the reaction plate and the chuck. In some such cases, the thermal insulation panel includes a plurality of wedge-shaped pieces that are physically separate from each other and configured to move relative to one another. In some such cases, the plurality of wedge-shaped pieces are adapted to be arranged in a circular fashion with the vertices facing a common center. In some other such cases, at least one of the wedge-shaped pieces includes a plurality of raised protrusions extending from its surface, the raised protrusions being spaced from one another about the surface. In some other such cases, at least one of the wedge-shaped pieces forms a monolithic element. In some other such cases, at least one of the wedge-shaped pieces forms a polylithmic element, comprising: a lower plate portion, and an upper plate portion adapted to be disposed over and operatively coupled to the lower plate portion, such that a vacuum can be maintained in a cavity defined between the lower plate portion and the upper plate portion. In some such cases, the lower panel portion includes a plurality of raised protrusions disposed on its inner surface and extending toward the upper panel portion within the cavity defined between the lower panel portion and the upper panel portion, the raised protrusions around the inner surface of the panel bottom plate portion are spaced around each other. In some cases, the heat insulating plate comprises: a lower plate portion, and an upper plate portion adapted to be disposed above and operatively coupled to the lower plate portion such that a vacuum can be maintained in a cavity intermediate between the lower Plate portion and the upper plate portion is defined. In some such cases, the lower panel portion includes a plurality of raised protrusions disposed on its inner surface and extending toward the upper panel portion within the cavity defined between the lower panel portion and the upper panel portion, the raised protrusions around the inner surface of the panel bottom plate portion are spaced around each other. In some other such cases, at least one of the lower plate portion and the upper plate portion forms a monolithic element. In some cases, the thermal insulation panel is configured to allow for yielding deflection of about 50 μm or less. In some cases, the leveling adjustment system further includes at least one load cell inserting at least one of the first and second threading posts.
    The features and advantages described herein are not exhaustive. In particular, one of ordinary skill in the art will recognize many other features and advantages of the drawings, the specification, and the claims. In addition, it should be noted that the wording used in the description was chosen primarily for readability and for the purpose of instructing and not limiting the scope of the inventive subject matter.
    BRIEF DESCRIPTION OF THE DRAWINGS
    We turn to the figures where like numerals indicate like parts throughout the views: FIG. FIG. 1 is a diagram of a prior art wafer bonding system; FIG. FIG. FIG. 2A is the result of a finite element analysis that illustrates the displacement along the bonding interface for the prior art wafer bonding system of FIG. 1 indicates; FIG. FIG. 2B is the result of a finite element analysis showing the von Mises stress along the bonding interface for the prior art wafer bonding system of FIG. 1 indicates; FIG. 3 is a diagram of a wafer bonding system; FIG. FIG. 4A is the result of a finite element analysis that illustrates the displacement along the bonding interface for the wafer bonding system of FIG. 3 indicates; FIG. FIG. 4B is the result of a finite element analysis showing the von Mises stress along the bonding interface for the wafer bonding system of FIG. 3 indicates; FIG. 5 is a diagram of another embodiment of a wafer bonding system; FIG. Fig. 6 is a cross-sectional diagram of a wafer bonding apparatus; FIG. Fig. 7 is a perspective view of a wafer bonding apparatus; FIG. 8 is a cross-sectional view of the wafer bonding apparatus of FIG. 7; FIG. 9A is a cross-sectional view of the wafer bonding apparatus of FIG. 8, which includes a wafer transport jig; FIG. FIG. 9B is a detailed cross-sectional view of a portion of the upper block assembly of FIG. 9A; FIG. FIG. 10 is a cross-sectional view of the wafer bonding apparatus of FIG. 9, wherein the wafers are in contact with the upper and lower block assemblies (approximate position); FIG. 11 is a detailed cross-sectional view of the wafer bonding apparatus of FIG. 10; FIG. FIG. 12 is a cross-sectional view of the wafer bonding apparatus of FIG. 8, which includes cross-sectional views of the upper and lower assemblies; FIG. 13 is a detailed cross-sectional view of one embodiment of the alignment system in the wafer bonding apparatus of FIG. 8th; FIG. 14A is a detailed cross-sectional view of the heat insulating layer in the bonding apparatus of FIG. 8th; FIG. 14B is a cross-sectional diagram of area Avon FIG. 14A; FIG. 15 is a detailed cross-sectional view of a portion of the upper block assembly of FIG. 8th; FIG. Fig. 16 is a perspective view of the wafer carrier jig and the wafer loading system; FIG. 17A is a top perspective view of the wafer carrier jig; FIG. 17B is a detailed view of the wafer spacers and clamping system in the wafer carrier chuck of FIG. 17A; FIG. Fig. 18 is a diagram of the wafer heater system; FIG. Fig. 19 is an exploded view of the wafer heater and heat insulating systems; and FIG. Fig. 20 is a cross-sectional view of another embodiment of the wafer bonding system; FIG. Fig. 21 is a cross-sectional view of a leveling mechanism; FIG. FIG. 22 is a perspective view of the leveling mechanism of FIG. 21; FIG. Fig. 23 is a cross-sectional view of a gimbal mounting bracket for use with the leveling mechanism; FIG. Fig. 24 is a cross-sectional view of a reaction plate and associated components; FIG. FIG. 25 is an opened perspective view of the reaction plate of FIG. 24; FIG. Fig. 26 is a perspective view of a heat insulating plate consisting of wedge-shaped sections; FIG. Fig. 27 is a perspective view of a two-section heat insulating plate.
    These and other features of the present embodiments may be better understood by studying the following detailed description, taken in conjunction with the figures described herein. In the drawings, each identical or nearly identical component illustrated in various figures may be represented by the same reference numeral. For clarity, not every component in each drawing is necessarily labeled with a reference number. Moreover, as will become apparent in the light of this disclosure, it is not intended that the accompanying drawings be to scale, nor that the described embodiments be limited to the concretely shown embodiments.
    DETAILED DESCRIPTION
    We turn to Fig. 1. In a prior art wafer bonding system 300, a first wafer 310 having a bonding layer 312 on a first surface 310a is contacted with a second wafer 320 having a bonding layer 322 on a first surface 320a such that the two Bonding layers 312 and 322 are opposed to each other. The wafer bonding process involves compressing the two wafers by applying a force 350 to a second surface 310b of the first wafer 310. The force 350 is usually applied to the center of the wafer stack 302 with a piston mechanism as shown in FIG. 1 shown. In other embodiments, the force 350 may be applied to the peripheral edge of the wafer stack 302, or a second force may be applied to the second face 320b of the second wafer 320 simultaneously with the force 350. A finite element analysis (FEA) of the displacement along the bonding interface 305 is shown in FIG. 2A. We observe the formation of a "hot pressure point" just below the central area 301 where the force 350 is applied. A first spherical region 302 directly under the central region 301 has a displacement of the order of 30 pm. Directly below the region 302 is another spherical region 303 where the displacement is on the order of 2-3 pm, and just below the region 303 is the region 304 where the displacement is in the region of 1 pm. The "hot pressure point" spherical front propagates down to the bonding interface 305 and causes the central region 306 to be more curved than the edge regions 307. As noted above, the pressure nonuniformity at the bonding interface can reach as much as 50%. The Von Mises voltages of the FEA are shown in FIG. 2B. We again observe a spherical stress front propagating down to the bonding interface 305 where it causes voltage fluctuations between the central region 306 and the peripheral region 307. The regions 308, 309 and 311 have mechanical stresses on the order of 100 Factors of Safety (FOS), 50 FOS and 10 FOS, respectively.
    We turn FIG. 3 too. In a wafer bonding system 400, a first wafer 410 having a first surface 410a is brought into contact with a second wafer 420 having a first surface 420a such that the two surfaces 410a, 420a face each other. The wafer bonding process involves compressing the two wafers by applying a "force column" 450 to a second surface 410b of the first wafer 410. The force column 450 comprises a plurality of forces arranged in a column whose base is sized to cover the entire second Surface 410b of the first semiconductor wafer 410, and is configured to apply a uniform pressure to the entire second surface 410b of the first wafer 410 and to transmit a uniform pressure to the bonding interface 405 of the wafer stack 302. In other embodiments, a second force column 460 may be applied to the second surface 420b of the second wafer 420 simultaneously with the force column 450, as shown in FIG. 5 shown. In one example, the force column 450 is a column of pressurized gas and applies forces on the order of 100 kN to a 200 mm wafer, producing a pressure of about 32,000 mbar. A finite element analysis of the displacement and Von Mises stresses along the bond interface 405 are shown in FIG. 4A and FIG. 4B. We observe uniform displacement layers 401, 402 and 403 with a uniform stress region 404 with no variations between the central region 406 and the peripheral region 407 of the bonding interface 405. In some embodiments, the surfaces 410a, 420a have bonding layers 412 and 422, respectively, formed therefor to support a certain type of bonding between the two wafer surfaces 410a, 420a. The bonding layers 412, 422 may be lattice structures, metal, glass, semiconductor structures, insulators, integrated devices, adhesives, or other bond-promoting materials or structures. The system is designed to perform any desired substrate bonding process, including anodic, eutectic and adhesive bonding processes, fusion, glass frit and thermal degradation bonding processes for wafer-to-wafer bonding. Accordingly, the system has appropriate controls for controlling the bonding operating parameters, including substrate temperature, bond pressure and chamber atmosphere, etc. In others
    In embodiments, system 400 is used to bond any type of semiconductor structures or materials, such as flat panel structures, IC devices, 3D integration of microelectronics, encapsulation of microelectromechanical systems (MEMS), etc.
    We turn to Figures 6-14. The bonding device 10 generally operates as a clamp. The apparatus 10 has opposed clamping blocks - in this embodiment, an upper block assembly 20 and an opposite lower block assembly 22. The lower block assembly 22 has a chuck 21 for holding or otherwise receiving one or more wafers. One or more stacks 430 of one or more wafers 410, 420, in FIG. 3 are positioned on the wafer chuck 21 of the device 10. The lower block assembly 22 is supported by the lower plate 56, and the upper block assembly 20 is supported by the upper plate 53. The lower plate 56 and the upper plate 53 are movably connected to posts 42. In this embodiment, the lower block assembly 22 and the lower plate 56 move upwardly along the Z direction to bring the wafer (s) substantially in contact with, or in close contact with, bearing surfaces 23S of the upper block assembly 20. When this approach position is reached, the positions of the lower plate 56, the upper plate 53, and the upper block assembly 20 are fixed, and the lower block assembly 22 is moved upward along the direction of the arrow P1 toward the upper block assembly 20 to a desired one high bonding pressure to the wafer stack 430 create. In one example, the desired bond pressure is 100 kN on a 200 mm wafer stack or 225 kN on a 300 mm wafer stack. In alternative embodiments, the upper block 20 or both the upper block 20 and the lower block 22 are moved together to apply the desired high bonding pressure to the wafer stack or wafers 430 and cause bonding between the contacting wafer surfaces 410a, 420a. The upper block assembly 20 and the lower block assembly 22 apply the high bonding pressure substantially evenly (ie, without significant pressure variance) across the region of the wafer bonding interface 405, and substantially without generating shear forces at the interface (for example, substantially zero shear forces the bonding interface of the wafers), as will be described in more detail below. The load distribution within the upper block assembly 20 and the lower block assembly 22, resulting in the above-discussed bond pressure, is a substantially straight column load in respective load-bearing members, which substantially eliminates load off-centering and bending moments, and bending in the upper and lower block assemblies 20 , 22 and in other sections of the device 10 caused. Uniformity and repeatability of the load are ensured by a support skeleton 16 of the device 10, which essentially bypasses the chamber housing 12 as a load-bearing element of the device 10. The uniformity of the stress at the bonding interface 405 is also ensured by the device 10 by means of a leveling system 82 which covers the wafer support surfaces 23S, 21S of the upper
    Block assembly 20 and the lower block assembly 22 substantially flat or parallel to each other and ensures that the bonding forces are applied by the lower and upper block assembly 22, 20 substantially perpendicular to the bonding interface 405 of the wafer stack 430. Further, in the exemplary embodiments, as will be described below, the upper block assembly 20 and the lower block assembly 22 include heaters 30 and 32, respectively (or heat cycling devices for cyclically heating the wafer contact surfaces 23S, 21S), which extend from the device structure through load bearing vacuum insulation systems 70 and 72 are thermally insulated. The load bearing vacuum insulation systems 70, 72 provide optimum thermal insulation performance while eliminating unwanted thermal leaks and reducing the thermal mass (and hence inertia) of the thermal cycling section (with faster cycle times) while still providing the desired loads (e.g. Example, bonding loads in the exemplary embodiment). In some embodiments, the heaters 30, 32 may have more than one heating zone. In FIG. 18, the heater 32 includes a first heating zone 32B configured to heat the central region of the wafer and a second heating zone 32A configured to heat the peripheral edge of the wafer. The heating zone 32A is controlled independently of the heating zone 32B to achieve thermal uniformity throughout the bonding interface 405 and to reduce thermal losses at the edges of the wafer stack.
    The device 10 is capable of bonding wafers or substrates 410, 420 of any suitable type and size. For example, the substrates 410, 420 may be 100 mm, 200 mm, or 300 mm diameter semiconductor substrates. In the in FIG. 3, the wafers 410, 420 are substantially similar to each other. In alternative embodiments, the stack 430 may include wafers of various types or sizes. The in FIG. The stack 430 shown in FIG. 3 has two wafers 410, 420 for exemplary purposes. It will be appreciated that the stack 430 may include any desired number of wafers bonded together. The bonded surfaces 410a, 410b may include bonding layers 412, 422, respectively, and the bonding layer 412, 422 may be metal, lattice structures, semiconductor structures, insulators, adhesives, glass, etc.
    We stay with the figures 6-14 and go into more detail. The bonding apparatus 10 includes a chamber 12. The chamber 12 is closed or otherwise configured to have a controlled atmosphere, such as an inert gas, or is filled with a gas as shown in FIG. 7, shown in a vacuum state. In alternative embodiments, the device need not include a chamber. As shown in FIG. 7, the chamber 12 includes an access port 14. The access port 14 is sized so that insertion and removal of a carrier jig 24 into and out of the position shown in FIG. 9 shown chamber 12 is possible. In some embodiments, a preload chamber 15 communicates with the chamber 12 via port 14, as shown in FIG. 7. The port 14 has a door (not shown) for closing the port, if desired. For introducing the wafer stack into the evacuated chamber 12, the port door is first closed, and the carrier jig 24 with the previously aligned wafers 410, 420 is placed in the preload chamber 15. Next, the pre-load chamber 15 is evacuated, and then the port door is opened, and the carrier jig 24 with the previously aligned wafers 410, 420 is placed in the chamber 12. The port door is then closed again. To remove the bonded wafers, the preload chamber 15 is evacuated, and then the port door is opened, and the carrier jig 24 with the bonded wafer 410, 420 is removed from the chamber 12, and the port door is closed again. The carrier jig 24 holds the previously aligned wafer stack 430. A transport device 480, such as a transport arm or transport chute that is automated or otherwise manually operated, is used to support the carrier jig 24 into and out of the chamber 12, as shown in FIG. 16 shown. In an embodiment shown in FIG. 17A, the carrier jig 24 is a circular ring 280 and includes three spacer and clamp assemblies 282a, 282b, 282c symmetrically disposed along the perimeter of the circular ring at about 120 ° intervals. Each spacer and clamp assembly 282a, 282b, 282c includes a spacer 284 and a clamp 286. The spacer 284 is configured to set the first and second wafers 410, 420 at a predetermined distance. Spacers with different thicknesses can be selected to set different distances between the two wafers. After the spacers are inserted between the wafers, the clamp is clamped to lock the position of the two wafers. Each spacer 284 and each clamp 286 is independently activated by linear actuators 283 and 285, respectively. For the bonding process, the aligned wafers 410, 420 are placed in the carrier jig 24 and are spaced apart with spacers 284 and then clamped with clamps 286. The jig with the clamped wafers is inserted into the bonding chamber 12, and then the clamps are released successively, the spacer is removed, and then clamped again. After all spacers have been removed, the wafers are re-clamped and the two wafers are pinned together with a pneumatically controlled center pin 290, and then the force column 460 is applied to hold the
    Performing bonding process. The wafers are pinned together with a force that can be adjusted automatically or manually.
    As shown in FIG. 8, at least one of the upper block 20 and / or the lower block 22 is movably held in the chamber 12. In the in FIG. 8, the upper block 20 and the opposite lower block 22 are shown in a vertical clamping configuration. In alternative embodiments, the opposing upper block 20 and lower block 22 are arranged in any other desired clamp orientation, including a horizontal clamp configuration. In the exemplary embodiment, the upper block assembly 20 is fixed and the lower block assembly 22 is movable along the direction indicated by the arrow P1, as shown in FIG. 6 shown. The lower block assembly 22 is also moved as a unit along with the lower support plate 56 along the Z direction (shown in FIG. 6) by a suitable drive 100, referred to herein as a z-drive 100. In the exemplary embodiment, the lower block 22 has a movable portion 22M that can be moved in the direction indicated by the arrow P1 independently of the z-drive 100 by a suitable actuator 52, as will be described below. In the exemplary embodiments, the z-drive 100 performs coarse movement of the lower block assembly 22 together with the support plate 56, and the actuator 52 moves the movable portion 22M of the lower block assembly 22 for bonding. In alternative embodiments, the z-drive 100 moves the upper block assembly 20 downwardly in a direction opposite to the indicated Z-direction. The upper block 20 and the lower block 22 have respective seating surfaces 23S, 21S. The upper and lower block assemblies 20, 22 and seating surfaces 23S, 21S are sized as needed to apply a suitable bonding pressure to the wafer stacks. As previously noted and described below, the seating surfaces 23S, 21S have thermal control (i.e., they may be heated and / or cooled). The heat control is performed by any suitable heat control unit. In one example, the seating surfaces 21S, 23S are made of a suitably hard material such as silicon carbide (Sic).
    We now turn FIG. 7 and FIG. 8 too. The chamber 12 generally includes a housing or enclosure 16 which is substantially closed to allow isolation of the interior of the chamber from the outside world. In the exemplary embodiment shown, the housing 16 is generally annular, although in alternative embodiments the housing may have any desired shape. The chamber housing 16 is supported on a desired base or foundation structure 18 by a skeleton or support frame 40. The base structure 18 is of any desired type and shape and is shown as a substantially flat plate 18, for example, located below the chamber 12. The base structure 18 is substantially rigid and, in alternative embodiments, may have any desired size, shape and position relative to the chamber. The skeletal frame 40 of the device 10 has substantially rigid elements attached to the housing 16 and connected to the base structure 18 to support the housing 16. The skeleton structure 40 is also attached to the upper and lower block assemblies 20, 22 of the apparatus 10 such that the reaction to the upper and lower block assemblies 20, 22 is distributed to the skeleton frame 40 and not the chamber housing 16 during application of the bonding forces. In the exemplary embodiment, the skeletal frame 40 is essentially an exoskeletal frame disposed outside the chamber 16. In alternative embodiments, the skeletal frame 40 may also be an endoskeletal frame, if desired disposed within the chamber. In the exemplary embodiment, the skeletal frame 40 includes substantially rigid threaded posts 42 (three are shown for purposes of exemplification, although any desired number may be used). The posts 42 are anchored at one end to the base structure 18. The posts 42 are substantially evenly distributed around the housing 16. The size and shape of posts 42 are selected to achieve a desired rigidity. The skeleton frame 40 may also include an upper mounting plate 46. As best in FIG. 7, the mounting plate 46 is attached to the housing 16 by a desired attachment method, such as welding, brazing, or mechanical fasteners. In alternative embodiments, the housing 16 and the mounting plate 46 may be formed as a one-piece element. The mounting plate 46 is a substantially rigid element. The rigidity of the plate 46 is generally matched to the stiffness of the remainder of the skeletal frame 40 comprising the posts 42, at least as a result of the reaction loads exerted thereon by the bonding press. In alternative embodiments, the mounting plate 46 that secures the housing 16 and other bonding press components inside the chamber 12 to the skeletal frame may have any other desired shape. As best in FIG. 8, the posts 42 are attached to the mounting plate 46 at another end. The connection 44 between each threaded post 42 and the mounting plate 46 may be bidirectional, with the ability to absorb axial loads along the axis of the posts 42, both toward and away from the base plate 18. The connection 44 of each threaded post is adjustable (both up and down along the axis of the posts) to provide a substantially uniform load on each threaded post 42 under both the static load of the chamber and device components and the static and dynamic loads during the process Ensure bonding press. In the exemplary embodiment, the joint 44 is generally symmetrical on opposite sides of the interface with the mounting plate 46. The link 44 may include engagement members 44E (eg, threaded arms) that engage the threaded post 42 (for example, by a positive engagement surface or clamping) and have a support surface for carrying loads from the attachment plate. The connection 44 may comprise bearing elements to ensure a uniform load distribution of the mounting plate on the bearing surfaces of the engagement elements 44E. In alternative embodiments, the connection between the posts 42 of the skeleton frame 40 and the mounting plate 46 that supports the chamber housing and the bonding press may take any suitable configuration. In the exemplary embodiment, the connection 44 may be biased (eg, by torque applying engagement elements 44E) to avoid undesirable displacements of the posts 42 during the bonding operation.
    As best in FIG. 8, and noted above, in the exemplary embodiment, the upper block assembly 20 and the lower block assembly 22 are attached to the skeletal frame 40. The upper block assembly 20 is attached to the skeleton frame 40 by a bridging support structure 53, as will be described below. The static and dynamic loads, including the bonding press loads, from the upper block assembly 20 are substantially fully supported by the bridging structure 53 and distributed by the bridging structure 53 to the posts 42 via the mounting plate 46. The lower block assembly 22 is attached to the posts 42 via a seat structure 56. In the exemplary embodiment shown, the seat structure 56 generally includes a bridging member 56S and a block support seat 56T. In alternative embodiments, the seat structure supporting the lower block may have any other desired configuration. For example, in the exemplary embodiment, the bridging structure 56S is shown as a plate, but may be any other desired shape, and is attached to the posts 42 by linear sliders 43. Therefore, in the exemplary embodiment, the seat structure 56 - and thus the lower block assembly 22 - may move in the direction indicated by the arrow z (z-direction). The posts 42 may serve as guides for the z-movement of the lower block. In the in FIG. In the exemplary embodiment shown in FIG. 8, the z-drive 100, which may be any suitable drive (eg, a linear electric drive, a pneumatic drive, or a hydraulic drive, to name but a few), is connected to and capable of bridging structure 56S Seat structure 56 and the lower block assembly 22 to move as a unit in the z-direction. The z-drive 100 may be attached to the base structure 18. As shown in FIG. 8, the support seat 56T is connected to the lower block assembly 22. In the exemplary
    Embodiment, the support seat 56 T extends generally into the housing 16. A bellows seal 16S, between the housing 16 (attached to a closure plate 16P of the housing in the example shown) and the support seat 56T, isolates the chamber interior and accommodates the z movement of the seat structure 56 and the lower block assembly 22. The in FIG. 8 is merely exemplary, and in alternative embodiments, the structure may have any desired configuration. In the exemplary embodiment, the seat structure 56 has a seat surface 58 which engages the underside of the lower block assembly 22.
    As best in FIG. 8, the lower block assembly generally includes a chuck 21 having a wafer support surface 21S, a heater (or heat cycle device) 32 and a flange 36. The heater 32 is supported by the flange 36. The heater 32 is thermally insulated from the flange 36 by a load-bearing vacuum insulation system 72, as will be described below. The flange 36 is maintained at a desired steady state temperature by a thermal controller (eg, a water cooling system). The chuck 21 is connected to the heater 32 so that the wafer support surface 21S and hence the wafer thereon are heated by the heater 32. The chuck 21, the heater 32 and the flange 36 constitute the movable portion 22M of the block assembly 22. The movable portion 22M is movable in the direction P1 relative to a base portion 22B of the block assembly 22, as shown in FIG. 9 shown. In the exemplary embodiment, the block assembly 22 includes an actuator 52 that operates the movable portion 22M independently of the movement of the z-drive and generates a force column that is substantially uniformly distributed across the seating surface 21S of the block assembly 22. In the exemplary embodiment, the actuator 52 is powered by a pressurized gas, although in alternative embodiments, the actuator may also be driven by hydraulic or magnetic means capable of generating a substantially uniformly distributed force column across the wafer seating surface. In the in FIG. In the exemplary embodiment shown, the actuator 52 has a movable plate member 54 and a base or reaction member 55. In this embodiment, the base member 55 is seated firmly against the surface 58 of the seat structure 56. Bellows seals 52B connect the plate 54 and the base members 55 of the actuator 52 and isolate the actuator from the chamber interior, as shown in FIG. 13 shown. As will be appreciated, a desired gas (for example, clean air or inert gas, such as nitrogen, N2) is introduced between the plate 54 and the base members 55 for actuation. The pressure of the gas is controlled to achieve the desired high pressures (for example, about 100 kN on 200-mm wafers, about 225 kN on 300-mm wafers) for bonding the wafer stack. The plate member 54 has in the exemplary
    Embodiment of a pressure surface 54F, which is substantially similar (for example, in shape and size) of the wafer support surface 21S of the chuck 21 and aligned parallel thereto, to produce a substantially uniform load-bearing column between the plate surface 54F and the wafer support surface, which in Substantially perpendicular to the plane of the wafer support surface. The bonding pressure is monitored with the pressure gauges 295 as shown in FIG. 13 shown. In some embodiments, the size of the printing surface 54F is adjusted via a manual or an automated mechanism to accommodate different large wafers. It will be appreciated that the orthogonality of the load on the wafer support surface by the actuator can be readily achieved by controlling the planarity and degree of parallelism of the disk pressure surface and the wafer support surface.
    As shown in FIG. 9, the lower block 22 in the exemplary embodiment further includes a leveling system 82 for leveling the wafer support surface 21S of the lower block assembly 22 with the wafer seating surface 23S of the upper block assembly 20. In the exemplary embodiment, the plate member 54 - and hence the movable portion 22M - floats the lower block assembly 22 - on a layer of gas with respect to the base 55 and is positionally decoupled from the base 55, except for the control by the leveling system 82. In the exemplary embodiment, the leveling system 82 includes a linear guide portion 84 and a rotational guide or gimbal section 86, as shown in FIG. 12 shown. The linear guide portion 84 guides the movement of the movable block portion 22M such that the movement of the wafer support surface 21S extends substantially axially in the direction indicated by the arrow P1 (without lateral translation). The rotative guide portion 86 guides the movement of the movable portion 22M so that the wafer support surface 21S can rotate and / or tilt about a center 85 (shown in FIG. 10) corresponding to the center of the wafer bonding interface 405 without translation. The leveling system 82 may be autonomous / automatic or, if desired, may be manually operated. In the exemplary embodiment, the linear guide portion 84 includes a guide rod 84R that is movably supported in a linear bearing assembly 84B, as shown in FIG. 13 shown. The guide bar 84R is connected to the plate member 54, as shown in FIG. 13 shown. In alternative embodiments, the linear guide portion 84 may have any other desired configuration. As shown in FIG. 13, in the exemplary embodiment, the linear bearing assembly 84B is adapted to the gimbal 86 defined by a hemispherical bearing assembly. The radius of the hemispherical bearing surface extends from the bonding interface center 85. The gimbal 86 may be attached to the support seat 56T. In alternative embodiments, the gimbal portion may have any other desired configuration. In other alternative embodiments, the linear guide and gimbal sections may be fitted together in any other desired arrangement. As shown in FIG. 13, the leveling system 82 is positioned so that the linear guide portion 84 and the gimbal portion 86 are not loaded by either the actuator 52 or any other portion of the lower block assembly during the bonding operation. In the exemplary embodiment, the gimbal portion 86 is biased to lock and release the support surface. The preload may be accomplished by any desired type of preload system, such as pneumatic or hydraulic pressure, or mechanical or electromechanical pressure applied to the support surface. The biasing system may be controlled via a suitable control unit (not shown) or may be set to a desired locking limit. The leveling system 82 permits dynamic leveling of the lower block assembly to the upper block assembly. This eliminates the over-tensioned condition that occurs when the top and bottom assemblies are not parallel or when the wafer stack is wedge-shaped. The bearing itself does not carry the bonding load, and the center of rotation lies on the wafer plane such that rotation that occurs does not cause wafer displacement.
    We turn FIG. 20 too. In another embodiment, the leveling system 82 is positioned to support the load of the actuator 52 as well as the bonding load. The gimbal portion 86 is positioned below the fixed plate 55 and supports the fixed plate 55, the movable plate 54 and the overlying flange 36, the thermal insulation system 72, the heater 32, the chuck 21 and the wafer (not shown). In this embodiment, the size of the base of the applied force column is adjusted so that wafers of various sizes can be accommodated. The fixed plate 55 is sealed against the movable plate 54 at the edges with the bellows seal 52B and at selectable intermediate positions with piston or zone seals 52Z1 and 52Z2. The sealing positions of the bellows seals 52B and intermediate zone seals 52Z1, 52Z2 are selected based on the size of the wafer stack that needs to be bonded and determine the footprint of the applied force column. Pressurized gas fills the sealed region between the selected seals. In one example, the position of the bellows seals 52B at the edges is selected for bonding 8 inch wafers, the zone seal 52Z1 is selected for bonding 6 inch wafers, and the zone seal 52Z2 is selected for bonding 4 inch wafers.
    We now turn FIG. 14 too. As previously noted, the lower block assembly has a thermal insulation system 72 that thermally isolates the heater 32 from the mating portion of the block assembly that supports the heater. As also noted previously, in the exemplary embodiment, the thermal insulation system is a load bearing vacuum insulation system. As shown in FIG. 13, the isolation system 72 is positioned along the load path from the actuator 52 to the wafer support surface 21S. The thermal insulation system 72 supports the bonding pressures. As shown in FIG. 14, the system 72 generally includes a load-bearing vacuum layer bounded between a plate 78 and a membrane 76. The membrane 76 is connected to the plate 78 via the bellows 74 outside the load bearing region. The membrane 76 may be made of any suitable material, such as INCONEL ™, and may be joined to the open end of the bellows 74 in any suitable manner, such as by welding. As shown in FIG. 14, the bellows 74 are located outside the load bearing portion of the block assembly, and the membrane 76 is positioned in the load bearing portion. The membrane 76 is supported by the plate 78, which contains material that has a low coefficient of thermal expansion (CTE). In one example, the plate 78 is made of ZERODUR® glass-ceramic manufactured by Schott AG. The plate 78 has a surface 78S which is formed to minimize the area of contact with the membrane 76, yet has sufficient strength to support the compressive loads during bonding, as shown in FIG. 15 shown. This structure 72 is continuously evacuated to minimize heat transfer. As discussed above, the surface 78S is formed, for example, by machining or other suitable manufacturing process to minimize the area of contact with the membrane and thus provide a limited and poor thermal contact area between the membrane 76 and the low CTE material layer 78 , It is understood that the low CTE 78 material layer may also have a poor thermal conductivity coefficient. In the in FIG. In the exemplary embodiment shown in FIG. 15, the contact surface 78S has raised projections that contact the membrane 76. The projections are shown schematically in FIG. 15 and may have any suitable shape. For example, the protrusions may have a cross-section that tapers inwardly to contact the membrane. The number and size of the protrusions may be selected as desired to achieve desired load capacity and thermal conduction properties at the interface between the membrane and the low CTE material layer. It will be appreciated that the thermal break created by the isolation system 72 permits rapid thermal cycling of the heater 32, the chuck 21, and the wafer stack 430.
    We turn again FIG. 8 too. In the exemplary embodiment, the upper block assembly 20 is generally similar to the lower block assembly 22 as previously described. In the exemplary embodiment, the upper block provides the control surface for the stack bond, and the leveling system 82 serves to level the wafer support surface 21S of the lower block assembly to the wafer support surface 23S of the upper block assembly, as previously described. In alternative embodiments, the upper block assembly 20 may have an integral leveling system. In this embodiment, the upper block assembly 20 is not movable. In other embodiments, the upper block assembly 20, similar to the block assembly 22, may have a movable portion 20M with chuck 23, heater 30, and support flange 34 (similar to the heater 32 and the lower block flange 36) provided by the actuator 50 in the direction is actuated, which is indicated by the arrow P1. As shown in FIG. 8, similar to the previously described system 72, in the exemplary embodiment, a load bearing vacuum thermal insulation system 70 defines a thermal break between the heater 30 and the flange 34. The actuator 50 in the alternative embodiment may also be similar to the actuator 52. The actuator 50 may have a plate member 57 and a reaction or base member 55 attached to the plate member by bellows seals 53B, as shown in FIG. 16 shown. In the exemplary embodiment, the bellows seals 53B are configured to support the movable portion 20M from the base member 55 under static conditions. Pre-load blocks 59 may be present to preload the bladders 53B during static conditions to allow improved control of the plate element displacement during actuator operation (eg, pre-load blocks counteract the spring forces in the bladders due to the weight of the movable portion of the top block assembly). As shown in FIG. 8, in the exemplary embodiment, the base member 51 of the actuator is connected to the bridging member 53 and is supported therefrom via a connecting portion 102. The connecting portion 102 is substantially in the z-axis to transmit the z loads between the base member 51 and the bridging member 53 without appreciable elongation. During the bonding process, the connecting portion 102 behaves like a pin connection and thus is incapable of transmitting bonding moments. In the in FIG. As shown in FIG. 8, the connecting portion 102 includes an annular enclosure or wall 102w connected to the base member 55 at one end 103. The wall 102w has a flange 106 extending between the wall 102w and the bridging member 53 and connecting the wall 102w to the bridging member 53. The flange 106 may be integrally formed with the wall 102w or the bridging member 53. The flange thickness is similar to the thickness of the bridging member at the interface between the flange 106 and the bridging member 53. When integrally formed with the bridging member 53, the flange 106 is connected to the wall 102w in any desired manner (e.g., by welding) and vice versa. The flange 106 serves to displace the wall 102w from the bridging member 53 and thus reduces the flexural rigidity of the wall 102w to the connection of the bridging member 53 and substantially allows the wall 102w to transfer bonding loads between the actuator base member 51 and the bridging member 53. It can be seen that this allows the base member 51 to remain substantially flat when the actuator is pressurized to bond the wafer stack in the chamber.
    Although the above-mentioned embodiments represent a substantial improvement over the known mechanisms, some of their aspects are expensive or complex in design and use. Therefore, various improvements will be described below.
    We turn again FIG. 6 too. It is desirable that the upper block assembly 20 be at the same level with respect to the lower block assembly 22 so that even pressure is applied to the entire surfaces 23S and 21S when brought together. As previously described with reference to FIG. 8, a certain degree of z-axis adjustment is possible at the connection 44 of each threaded post 42 by adjustment of respective engagement members 44E. In an embodiment using three such posts 42, such two-dimensional leveling can be obtained. However, it is found in practice that a design using this mechanism is time consuming and somewhat difficult. As an improvement, and now with reference to FIG. 21, in one embodiment, instead of each two of the three posts 42, a threaded post 2101 is engaged with a differential thread adjusting collar 2102 surrounded by a leveling sleeve 2110. To ensure that the threads of the adjustment collar 2102 are properly seated before a load is applied to them so that the adjustment does not change under load, biasing springs 2105 (for example, preload discs) are engaged between the attachment plate 46 and the threaded post 2101, wherein an upper spacer stop 2103 and a hex screw 2104 are arranged as shown to provide a range limit stop. A clamp 2106 is configured to provide a radial clamping force to minimize z-axis movement when tightened after the leveling adjustment is completed. The leveling sleeve 2110 includes a shoulder 2111 that allows a hexagonal shoulder screw 2112 to prevent rotation (or otherwise movement) of the leveling sleeve 2110 during adjustment. In one embodiment, the springs 2105 are disc or cone disc springs superimposed as shown (eg, within a generally cone-shaped seating feature defined in the mounting plate 46) to the desired preload capacity and desired
    To provide a range of adjustment, which in some embodiments is approximately ± 2 mm, with a preload force of at least 5 kN or more (for example, about 10 kN or more, about 15 kN or more, and so forth). In one embodiment, the threaded adjustment collar 2102 has a differential thread in the form of a micrometer drive system with male threads of 2 mm pitch and internal threads of 1.5 mm pitch, which provides an effective pitch of about 1.0 mm or less (for example, about 0.75 mm or less, about 0.5 mm or less, and so on). In some embodiments, the pitch of the internal threads may be about 0.5 mm less than the pitch of the external threads. FIG. FIG. 22 is a perspective view showing the structure shown in FIG. 21 discussed components illustrates. In the illustrated embodiment, the leveling sleeve 2110 includes an integral clamp 2106 formed by cutting away a portion of the leveling sleeve 2111. In addition, vernier scale markers 2202 are etched into a portion of leveling sleeve 2110, and vernier scale markers 2201 are also etched onto a portion of threaded collar 2102, thereby allowing adjustment by the user in a simpler manner than if no such mark were present. In one embodiment, vernier scale markers 2201 and 2202 have a measurement fineness of the order of one micron (1 pm).
    As previously noted, in one embodiment, two out of three posts 42 are replaced by the component configurations shown in Figures 21 and 22. In this embodiment, the replacement for the third threaded post 42 is a non-adjustable gimbal attachment. By being able to adjust two out of three posts, the desired leveling capability is achieved and no third adjustment point is required. We now turn FIG. 23 too. A third threaded post 2101 is not provided with the adjustment components shown in Figures 21 and 22, but includes a load cell 2301 having a corresponding cap 2302 and a gimbal 2303. In one embodiment, the cap 2302 is secured by a cap screw (not shown) and springs 2105 tightened in the same manner as described in connection with FIG. 21 was discussed. The load cell 2301-in one embodiment, a model FD0180-N510-1379-M09 (available from ATP Messtechnik GmbH of Ettenheim, Germany) -is used instead of the load cell 2301. An advantage of this gimbal design is that the load cell 2301 not only forms part of the gimbal but can also be used as a sensor for the applied force column, as previously discussed. Thanks to equal spacing and symmetrical arrangement of the posts 42 (more precisely, the posts 2101 discussed with reference to FIGS. 21 and 23), the total applied force is simply three times the force indicated by the load cell 2301. According to some embodiments, a load cell 2301 may be used with any or any combination of the posts provided. Therefore, multiple load cells 2301 may be used at one or more positions.
    As described above, for example, in connection with Figures 6, 8 and 11, a lower block assembly 22 is adapted to be brought into contact with an upper block assembly 20, and in the particular embodiment of Figures 8 and 11, the associated heating device and heat insulating components 30, 32, 34, 36 all brought together via the force columns 450, 460. In practice, it is found that thermal differences and significant pressures can cause upward buckling of certain components (e.g., the upper and lower block assemblies 20, 22 and those components which can be sufficiently pressed against those assemblies to assume their shapes). Although such deformation may be very small (in some cases, for example, in a range of 25-150 pm), this may still result in uneven wafer bonding. We now turn FIG. 24 too. To minimize such deformation, in one embodiment, a reaction plate 2401 is used to minimize such unwanted deformations. In one embodiment, the reaction plate 2401 is a monolithic machined piece of AISI 1045 steel without complex moving parts. The reaction plate 2401 is fastened by screws to the base member 51 described above. A set of seals 2402-2407 (with corresponding cross-sections on the right side of FIG. 24, not numbered), in one embodiment O-rings, are disposed in corresponding grooves in the base member 51 and the reaction plate 2401. The seals 2406 and 2407 maintain the pressure ratios in the process chamber, which is the region outside of the space defined by the seal 2407, and within the space defined by the seal 2406. The process chamber environment is a high vacuum in some embodiments, but may also have higher pressures (in one embodiment, for example, up to 2 atmospheres). Gaskets 2402 and 2405 define internal and external boundaries, respectively, for introducing pressurized gas (as described above) between base member 51 and reaction plate 2401 via the respective ports (not shown). The spaces between the seals 2402 and 2406 and between the seals 2405 and 2407 are maintained above the vents 2408 at a nominal atmospheric pressure. A portion of the material forming the reaction plate 2401 is cut away to form a bend 2409. The seals 2402-2407 act as dynamic seals that expand or contract with the relative movement of the respective portions of the base member 51 with respect to the reaction plate 2401, eliminating the need for more complex structures, such as pistons, which would otherwise seal in one such movement would be maintained. In one embodiment, seals 2402-2405 are implemented using 3 mm diameter O-rings that have been found to maintain a good seal even at pressures on the order of 37 bar (for example, about 537 psi).
    Gaskets 2403-2405 are designed to allow pressurization appropriate to the three different standard sizes of wafers. For 4 inch diameter wafers, pressurized gas is introduced via the corresponding ports in the region between seals 2402 and 2403; for 6 inch diameter wafers, the zone between seals 2403 and 2404 is also pressurized. For 8 inch diameter wafers, the zone between seals 2404 and 2405 is also pressurized. It should be noted that the seal 2407 is smaller than the other seals because it lies outside of the bend 2409 in a range that does not undergo significant deformation.
    In practice, it is found that any unwanted variation in the bonding force and a corresponding deformation of the substrate chuck due to upward bulging of components such as the base member 51 in the described embodiments (for example, in FIG. 15) using the reaction plate 2401 is pressurized in the manner described, is significantly reduced.
    Further, in Fig. 24, various members are illustrated between the reaction plate 2401 and the chuck 23 (described above) in one embodiment. As shown, these include a water-cooled flange assembly including a cap 2410 and a support flange 34 as described above, and heating and heat insulating components, including an insulating plate 2470 and the previously described heater 32 with heat shields 2478, as described in more detail below. FIG. FIG. 25 is an exploded perspective view of the reaction plate 2401 and many of the associated components illustrated in FIG. 24. FIG.
    It should be noted that the insulating plate 2470 has improved durability and elongated service life and is less complex than in the case of the thermal insulation systems previously described in connection with, for example, Figs. 14 and 19, even under the temperature and pressure extremes of repeated use. In one embodiment, the insulating plate 2470 is made of low CTE material as described above, with a set of superposed heat shields 2478 disposed between the insulating plate 2470 and the heater 32 to allow for improved thermal insulation. We now turn FIG. 26 too. Instead of using the system of a single low CTE plate 78 and a membrane 76 of FIG. In one embodiment, insulating plate 2470 is comprised of a number of cake wedges 2671 of low CTE material. It is found that a benefit of using such 2671 wedges, rather than a single piece of low CTE material, is in minimizing the adverse effects of thermal expansion and contraction. Such expansion / contraction of a single such piece when in contact with another piece having a different coefficient of thermal expansion (for example, the membrane 76 as shown in FIG. 19) may result in abrasion of either the low CTE material. the other piece or both. Since the cake-shaped wedges 2671 are independent, each can move slightly with respect to the other, and therefore, abrasion due to movement due to thermal expansion / contraction is minimized or at least reduced. In some cases, wedges 2671 may be configured to be generally circular, with the vertices facing a common center, although other arrangements are possible according to other embodiments. In addition, the use of wedges 2671 allows the insulating plate 2470 to provide a small amount of desired yielding deflection in the range of about 50 pm or less (eg, about 30 pm or less, about 10 pm or less, about 5 pm or less, and so on) and can survive such deflection without cracking, as low CTE materials are generally not very tolerant in this respect.
    In one embodiment, a further improvement over membrane / vacuum systems, such as those of FIG. 19, is achieved by the use of superimposed foil heat shields 2478, rather than relying on vacuum alone (and relying, therefore, on the membrane 76 remains intact). In one embodiment, the heat shields include two metal foil layers, each having cut-out holes corresponding to the pattern of the raised protrusions of the insulating plate 2470. In one embodiment, head shields 2478 are stainless steel; in an alternative embodiment, a low CTE alloy, such as Invar, is used. In practice, it is found that using the insulating plate 2470 and the foil heat shields 2478, performance similar to the vacuum based system of FIG. 19 is achieved without a vacuum must be made at all.
    We now turn FIG. 27 too. In another embodiment, the insulating plate 2470 is made of two pieces of low CTE material: an upper portion 2771 and a lower portion 2772. In a variant of this embodiment, even heat shields 2478 are not needed, particularly if a slight vacuum is present in the voids between the upper portion 2771 and lower portion 2772 is maintained. In this way, the heat-insulating benefits of a partial vacuum are obtained without the need for a membrane that can wear over time. It may be found that combinations of these features also provide improved performance and wear characteristics in certain applications. For example, each of the wedges 2671 of FIG. 26 consist of upper and lower sections 2771, 2772, as shown in FIG. 27 shown.
    The above description of exemplary embodiments is for the purpose of illustration and description. It should not be exhaustive, nor should it limit the present disclosure to the precise forms disclosed. Many modifications and variations are possible in the light of this disclosure. It is intended that the scope of the present disclosure be limited not by this detailed description but by the claims appended hereto. Future filed applications claiming priority to this application may claim the disclosed subject matter in a different manner and may generally include any set of one or more limitations, which are variously disclosed or otherwise illustrated herein.
    权利要求:
    Claims (29)
    [1]
    claims
    A semiconductor structure bonding apparatus comprising: a lower block assembly including a first surface adapted to deposit at least one semiconductor wafer thereon; an upper block assembly including a second surface adapted to be brought into contact with the first surface under application of bonding pressure to the at least one semiconductor wafer; and a leveling adjustment system configured to perform a leveling adjustment of the upper block assembly with respect to the lower block assembly, the leveling adjustment system comprising: a first threaded post; a first differential thread adjusting collar surrounding the first threaded post; a first leveling sleeve surrounding the first differential thread adjusting collar; a second threaded post; a second differential thread adjusting collar surrounding the second threaded post; and a second leveling sleeve surrounding the second differential thread adjusting collar.
    [2]
    2. The apparatus of claim 1, wherein at least one of the first differential thread adjuster collar and the second differential thread adjuster collar is formed as a micrometer drive system having external threads of a first pitch and internal threads of a second pitch differing from the first pitch.
    [3]
    3. The apparatus of claim 2, wherein the second pitch is about 0.5 mm smaller than the first pitch.
    [4]
    4. An apparatus according to any one of the preceding claims, wherein at least one of the first differential thread adjusting collar and the second differential thread adjusting collar is adapted to have an effective pitch fineness of 1.0 mm or less.
    [5]
    5. The device of claim 1, wherein at least one of the first leveling sleeve and the second leveling sleeve includes a shoulder portion adapted to receive a fastener such that the at least one of the first leveling sleeve and the second leveling sleeve is prevented from moving during the leveling adjustment of the upper block assembly with respect to the lower block assembly to rotate.
    [6]
    6. The device of claim 1, wherein at least one of the first leveling sleeve and the second leveling sleeve includes a clamp formed integrally therewith and configured to provide a radial clamping force that reduces z-axis motion when is tightened after the leveling adjustment of the upper block assembly with respect to the lower block assembly has been completed.
    [7]
    The apparatus of any one of the preceding claims, wherein: the apparatus further comprises a mounting plate operatively coupled to the first threaded post and the second threaded post and configured to transfer a load from the upper block assembly to the first threaded post and the second threaded post to distribute; and the leveling adjustment system further comprises a plurality of biasing springs disposed between the mounting plate and at least one of the first threaded post and the second threaded post.
    [8]
    8. The apparatus of claim 7, wherein at least one of the plurality of biasing springs is a plate spring.
    [9]
    The apparatus of claim 7 or claim 8, wherein the plurality of biasing springs are configured to provide at least one of: a biasing force of at least 5 kN; and an adjustment range of about ± 2 mm.
    [10]
    The apparatus of any one of the preceding claims, wherein the leveling adjustment system further includes an upper spacer end stop disposed over at least one of the first threaded post and the second threaded post within a corresponding one of the first differential thread adjuster collar and the second differential thread adjuster collar and adapted to receive a fastener such that the fastener is physically coupled to the at least one of the first threaded post and the second threaded post.
    [11]
    The apparatus of any one of the preceding claims, wherein the leveling adjustment system further comprises a third threaded post formed as a non-adjustable gimbal attachment.
    [12]
    The apparatus of any one of the preceding claims, wherein the leveling adjustment system further comprises: a third threaded post; and a load cell through which the third threaded post is inserted.
    [13]
    13. The apparatus of claim 12, wherein: the apparatus further comprises a mounting plate operatively coupled to the first threaded post and the second threaded post and adapted to distribute a load from the upper block assembly to the first threaded post and the second threaded post; and the leveling adjustment system further comprises a gimbal bushing disposed between the load cell and the mounting plate and through which the third threaded post is inserted.
    [14]
    The apparatus of claim 12 or claim 13, wherein the leveling adjustment system further comprises a cap disposed over the third threaded post and adapted to receive a fastener such that the fastener is physically coupled to the third threaded post.
    [15]
    15. The device of claim 1, wherein: the upper block assembly further comprises: a chuck configured to provide the second surface formed therefor by applying bonding pressure to the at least one semiconductor wafer having the first surface to be contacted; and a reaction plate disposed over the chuck and configured to reduce deformation of the upper block assembly, the reaction plate comprising: a monolithic plate member; and a plurality of concentric grooves defined in the monolithic plate member and configured to receive a corresponding plurality of seals; and the apparatus further comprises a plurality of ports configured to direct pressurized gas to a plurality of regions of the reaction plate.
    [16]
    16. The apparatus of claim 15, wherein: the plurality of concentric grooves of the reaction plate include: a first groove; a second groove concentrically outside the first groove; a third groove concentrically outside the second groove; and a fourth groove concentrically outside the third groove; and the plurality of ports are configured to direct pressurized gas to the plurality of regions of the reaction plate such that, in the bonding of 4 inch diameter semiconductor wafers, pressurized gas is directed to a first region defining between the first groove and the second groove is; when bonding 6 inch diameter semiconductor wafers, pressurized gas is directed to the first region and a second region defined between the second groove and the third groove; and in bonding 8 inch diameter semiconductor wafers, pressurized gas is directed to the first region, the second region, and a third region defined between the third groove and the fourth groove.
    [17]
    17. The apparatus of claim 15 or claim 16, wherein in the reaction plate, a cutout is defined, which is adapted to allow at this point a bending of the reaction plate.
    [18]
    18. The apparatus of claim 15, wherein the upper block assembly further comprises a heat insulating plate disposed between the reaction plate and the chuck.
    [19]
    19. The apparatus of claim 18, wherein the heat insulating plate comprises a plurality of wedge-shaped pieces that are physically separated from each other and adapted to move with respect to each other.
    [20]
    20. The apparatus of claim 19, wherein the plurality of wedge-shaped pieces are configured to be arranged in a circular fashion with the vertices facing a common center.
    [21]
    The apparatus of claim 19 or claim 20, wherein at least one of the wedge-shaped pieces includes a plurality of raised protrusions extending from its surface, the raised protrusions being spaced from one another about the surface.
    [22]
    22. Device according to one of claims 19 to 21, wherein at least one of the wedge-shaped pieces forms a monolithic element.
    [23]
    23. An apparatus according to any one of claims 19 to 22, wherein at least one of the wedge-shaped pieces forms a polylith- ic element comprising: a lower plate portion; and an upper plate portion adapted to be disposed above and operatively coupled to the lower plate portion such that a vacuum can be maintained in a cavity defined between the lower plate portion and the upper plate portion.
    [24]
    24. The apparatus of claim 23, wherein the lower plate portion comprises a plurality of raised protrusions disposed on its inner surface and extending toward the upper plate portion within the cavity defined between the lower plate portion and the upper plate portion, wherein the raised protrusions spaced around the inner surface of the lower plate portion.
    [25]
    25. The device according to claim 18, wherein the heat insulating plate comprises: a lower plate portion; and an upper plate portion adapted to be disposed above and operatively coupled to the lower plate portion such that a vacuum can be maintained in a cavity defined between the lower plate portion and the upper plate portion.
    [26]
    26. The apparatus of claim 25, wherein the lower plate portion includes a plurality of raised protrusions disposed on its inner surface and extending toward the upper plate portion within the cavity defined between the lower plate portion and the upper plate portion, wherein the raised protrusions spaced around the inner surface of the lower plate portion.
    [27]
    27. The apparatus of claim 25 or claim 26, wherein at least one of the lower plate portion and the upper plate portion forms a monolithic element.
    [28]
    28. An apparatus according to any of claims 18 to 27, wherein the heat insulating plate is adapted to allow a yielding sag of about 50 pm or less.
    [29]
    29. The device of claim 1, wherein the leveling adjustment system further comprises at least one load cell through which at least one of the first threaded post and the second threaded post is inserted.
    类似技术:
    公开号 | 公开日 | 专利标题
    AT518338B1|2019-10-15|Semiconductor bonding apparatus and related techniques
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    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    US201662299349P| true| 2016-02-24|2016-02-24|
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