• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a thermoelectric element (1), comprising an electrically conductive carrier layer (3), an active element (2), an electrically conductive cover layer (4), wherein the carrier layer (3) and the cover layer (4) Further, the active element (2) has a pn junction (7) from an n-type semiconductor (5) to a p-type semiconductor (6), and wherein the active element (2) is interposed between the support layer (3) and the cover layer (4) and is arranged electrically conductively connected thereto and wherein the n-type semiconductor (5) is formed from the group of cyanoferrate. The invention further relates to a power conversion element (22) comprising a photovoltaic element (18) and a thermoelectric element (1), wherein the photovoltaic element (18) has an input side (19) for optical energy (20) and a this opposite base surface (21), wherein the thermoelectric element (1) with its carrier layer (3) is arranged thermally contacting on the base surface (21).
    公开号:AT512315A1
    申请号:T1841/2011
    申请日:2011-12-19
    公开日:2013-07-15
    发明作者:Eduard Dipl Ing Buzetzki
    申请人:Eduard Dipl Ing Buzetzki；Kirchheimer Karl Ddr；Padinger Franz Dipl Ing；Schiller Karl Ing；
    IPC主号:
    专利说明:

    1 ·· φ * · ♦ ·· ··· «· ·
    The invention relates to a thermoelectric element.
    Thermoelectric elements or thermoelectric generators (TEG) are based on the Seebeck effect, according to which there is a stress formation at a temperature difference along second interconnected conductors of different materials. The Seebeck effect is considered herein to be known to those skilled in the art.
    In addition to versions of thermoelectric generators as a measuring point or measuring probe, for example in Zündsicherungen of firing systems, a design is known as a planar element. In this case, instead of a metal combination, a semiconductor combination is used, structurally similar to a Peltier element. By using semiconductor materials, the efficiency compared to thermocouples, based on metal pairings, can be significantly increased. In a Peltier element, semiconductor elements, in each case an n- and a p-type semiconductor, are connected in series in a known manner, the series connection bridge being arranged alternately opposite one another and thus forming a cold and a warm side of a Peltier element. If a temperature difference is formed between the cold and the warm side of the Peltier element, it will be due to the Seeback effect, at the connection points to provide electrical energy.
    A disadvantage of such TEGs is that the Seebeck effect is based on a temperature difference, the deliverable voltage increases with increasing temperature difference up to a maximum value of the temperature difference, so that as large as possible N2011 / 32000 • ♦ • · · ··· ♦ • • • 9 9
    Temperature difference must be maintained. Therefore, one side, the cold side, usually cooled with quite expensive devices, for example by means of forced air cooling and possibly by means of water cooling. As a result of this additional expense, an economic energy production by means of TEGs is largely non-existent, since the expense for the required cooling makes up for the advantage of the energy gain.
    Another field of application for thermoelectric generators is wherever process heat is present, which must be dissipated unused to the environment or via cooling systems. For example, internal combustion engines or combustion systems of older generation have a high exhaust gas temperature, whereby a large part of the primary energy used is wasted. Also, in the case of technical devices, due to the intended operation, severe heating may occur, as a result of which, where appropriate, the operating parameters may change so negatively that the efficiency of the technical device deteriorates. As an example, photovoltaic elements may be mentioned here which, when used as intended, become very hot due to their optimum alignment with the sun, whereby operating temperatures of up to 140 ° are easily achieved. However, such high operating temperatures cause a deterioration in the conversion efficiency of the photovoltaic element, so that, especially in the more southerly countries, the economic use of photovoltaic elements is limited due to the prevailing high temperatures. Here it would be advantageous if thermal energy can be dissipated by the photovoltaic element and this thermal energy could be used in addition to energy.
    Known thermoelectric elements have, as already described, the disadvantage that they are suitable only for the presence of a temperature difference between the two flat sides, for energy production, in Peltier elements temperature difference can be achieved / required up to 70 ° C. In the case of arrangement of known elements on a photovoltaic element, the energy gain obtained would be used up by the additional expense for cooling the thermoelectric element N2Q11 / 32000, so that an economical use is essentially not possible.
    Due to the construction as a series connection of individual semiconductor blocks, the known, thermoelectric element, although a low electrical resistance, but at the same time also has a very low thermal resistance. As a result, when heat is introduced on one side, the heat flow penetrates the thermoelectric element very quickly and, without a sufficiently strong cooling of the opposite side, temperature compensation takes place, as a result of which the heat flow and thus also the energy conversion comes to a standstill.
    The invention has for its object to provide a thin-film thermoelectric element (TEE), which has a higher efficiency compared to known TEEn and is simpler and cheaper to manufacture. Furthermore, it is the object of the invention to design the thermoelectric element in such a way that the temperature compensation in the element is reduced.
    The object of the invention is achieved by a thermoelectric element (TEE), which comprises an electrically conductive carrier layer, an active element and an electrically conductive cover layer. The carrier layer and the cover layer form the discharge electrodes, and furthermore the active element has a p-n junction from an n-type semiconductor to a p-type half conductor. The active element is arranged between the carrier layer and the cover layer and connected to these electrically conductive. The n-type semiconductor is formed from the group of the cyanoferrate, which has the surprising advantage that with materials from this group, when arranged in a p-n junction, a conversion of heat into electrical energy takes place.
    Known thermoelectric elements (Peltier or Seebeck elements) have a p-n junction, wherein as semiconductor materials, for example. Bi2Te3, PbTe, Si-Ge, BiSb or FeSi2 are known. On the one hand, however, these elements are very expensive and, on the other hand, have a very modest conversion efficiency in the desired frequency range of infrared radiation (IR). In particular, SiN2011 / 32000 based semiconductors are largely unsuitable for wavelengths greater than about 1.1 pm due to their band gap. GaSb-based semiconductors can be used up to about 1.5 pm, but have a lower efficiency than Si semiconductors.
    In contrast to known semiconductor materials, the materials from the group of cyanoferrate are significantly cheaper, whereby the economic use of such TEEe is improved, also no elaborate production systems are required for processing these materials, in particular no high-temperature or high-vacuum systems are required.
    By an arrangement in which the active element is arranged on the carrier layer and on the active element, the cover layer is arranged, a protection of the active element is achieved by the two layers. Furthermore, a good thermal coupling to the environment or to a thermal energy source is achieved by the two layers, or a homogenization of the thermal energy input in the carrier or cover layer is achieved. This also results in a good derivation of the charge carriers generated by the active element.
    By means of an embodiment according to which the carrier layer and the cover layer are arranged substantially parallel to one another, a planar device is formed, which can be attached very well to a thermal energy source and thereby enables good thermal coupling with the energy source. In particular, thermal energy can thus be removed from a source over a large area.
    In known thermoelectric elements, the semiconducting materials are arranged in blocks next to one another and in each case connected to the front side to form a series circuit, the respective end faces of all blocks forming the two flat sides of such an element. The structure of a known TEE is considered herein to be known to those skilled in the art. Although this under inplane known arrangement has the advantage of low electrical resistance, but at the same time, the thermal resistance is low. As a result, temperature compensation across the thickness of the semiconductor blocks occurs, which negates energy conversion because it is based on a temperature difference between the semiconductor junctions. Therefore, in such elements, a temperature difference across the thickness of the semiconductor blocks must be maintained-one side is usually cooled quite expensive, which significantly reduces the overall efficiency. A claimed arrangement according to which the active element is designed as a layer structure (crossplane) now has the advantage that thereby the thermal resistance increases significantly over the thickness of the layer structure, so that it comes only to a low temperature compensation and the TEE thus manages without additional cooling ,
    The visual structure is preferably constructed such that the p-type semiconductor is arranged on the carrier layer. Above this, the n-type semiconductor is arranged, on which the cover layer is arranged.
    According to a development, the n-type semiconductor is formed by hexacyanoferrate.
    Preferably, the n-type semiconductor is formed of iron (III) hexacyanoferrate (II / III) (Fe7Ci8N18). _4-
    N
    VL / T
    Fe3 + * 3
    I
    Iron hexacyanoferrate is known as a dye under the name Prussian Blue. It is surprising that this dye is able to convert heat into electrical energy as an n-type semiconductor in a p-n transition of an active element - similar to the Seebeck effect. Due to the cage-like structure of the hexa-cyanoferrate anion, when thermal energy is applied, the iron in the anion attempts to perform a disordered movement (oscillation), but this movement is impeded by the C-N cage. This hindrance also has an effect on the heat transfer, therefore the thermal resistance increases and there is no, or only to a greatly reduced, temperature, N2011 / 32000 6
    temperature compensation in the active element The charge carriers released by the temperature supply at the cation of the cyanoferrate complex are captured by the p-layer, which acts as an acceptor (hole transporter). Via the electrically conductive carrier and cover layers, the generated charge carriers from the n- and p- Layer removed.
    According to a development of the n-type semiconductor is doped with at least one substance from the group of metal oxides, for example. With TiO 2, whereby an improvement in the conversion efficiency is achieved. In the case of metal oxides, all those substances which have a large band gap and / or a surface structure with large pores are advantageous, in order to achieve the greatest possible absorption of the impinging thermal energy (IR radiation).
    The p-type semiconductor may be formed of a material of the group PEDOT: PSS, GaSb / PEDOT and Si. For silicon nano Si or p-doped Si (eg with boron) is possible.
    According to a development, the carrier layer is formed by a transparent substrate, on which a transparent electrode is applied. For example, the carrier layer may be formed by glass, plastic, the transparent electrode is preferably formed as a TCO. In this context, it is to be understood as transparent that the relevant wavelength range, from 400 nm to 700 nm, is not attenuated by the carrier layer or the electrode, or only very slightly. This design has the further advantage that the carrier layer can be formed electrically insulating and thus the attachment of the subject TEEs on a variety of materials, in particular electrically conductive, without additional protective measures is possible.
    With a development according to which the carrier layer is formed by an elastically rückstelibares substrate, an element is created, which can be attached to non-planar surfaces without risk of damage to the TEEs. The carrier layer may, for example, be formed by a PET layer, but it is within the expertise of the technician to determine the minimum bending radii of the material, the active N2011 / 32000 ······················································ · * * ♦ · * * 1 * * * * * M · »·· M # ··
    Specify elements and in particular those of the discharge electrodes to prevent damage by deformation.
    A development according to which the carrier layer and / or the cover layer is formed by a metallic conductor has the advantage that once a very good dissipation of the charge carriers is given. Furthermore, a metallic conductor usually also has a good thermal conductivity, whereby a temperature compensation over the carrier and / or the cover layer is possible and this therefore each is at a uniform temperature level. This has the advantage that no compensation currents (thermal and / or electrical) occur in the active element, which in particular increases the overall efficiency. In an advantageous development, it is further provided that, for example, the n-type semiconductor is applied directly to the carrier layer, which thus assumes the support function and charge carrier discharge.
    A development further consists in that the carrier layer is formed by a collector layer, for example. From tungsten carbide. This advantageously achieves that incoming IR radiation from the collector layer is converted into convective heat, which then acts on the active element. For example, the collector layer may be selectively formed for a wavelength range, so as to absorb as much energy as possible and pass it on to the active element despite a low incident radiation power. In one possible development, the subject TEE can be used in an environment where only a partial region of the infrared spectrum is present and the energy content in this spectral region would possibly be too low for a direct action on the active element. Here, a significant increase in efficiency can be achieved with a frequency-selective collector.
    A development further consists in that the carrier layer and / or the cover layer is formed by an electrically conductive grid structure. This ensures that the proportion of the area of the active element is covered, which is covered by the discharge electrodes and thus more area for the action of the IR-N2011 / 32000 8 ················· ·· # ···· 9i ··· nt
    Radiation is available. Nevertheless, the derivation grid ensures sufficiently good dissipation of the charge carriers.
    To protect the active element, in particular against moisture and oxygen, it is provided that a protective layer is applied over the portions of the active element which are not covered by the carrier layer and the cover layer. This protective layer can be formed, for example, by glass, by a plastic film which may be coated with aluminum or boron nitride to reduce the moisture and oxygen permeability, or by a metallized film. Just moisture and / or oxygen can cause slowly progressive, irreversible changes in the semiconductor materials of the active element, which can lead to failure of the active element.
    A development may also consist in that a protective layer is applied on the side facing away from the active element of the carrier layer and / or the cover layer. Since the two layers form the discharge electrodes, it is advantageous for application safety if the protective layer is designed to be electrically insulating, for example as a plastic film made of PET, PVA, PVC, PC, to name only the most important materials. Furthermore, the protective layer may also be designed to protect the layers, and in particular the entire TEE, from the environmental influences prevailing at the point of use.
    According to one embodiment, the active element of the subject thermoelectric element has a thickness in the range of 1 pm to 1 mm, preferably in the range of 10 pm to 50 pm. Thus, a TEE is created, which has a very low overall thickness - and thus low weight - and thus can be very well attached to existing devices.
    One possible embodiment for increasing the electrical voltage delivered is that at least one further active element, again with a cover layer, is arranged on the cover layer. With this development, the cover layer of the lower TEEs represents the carrier layer of the TEEs arranged thereon, this is a construction-related, hardwired series circuits N2011 / 32000.... • * · · · · T · · · · «M # ·· ··» of several TEEs, the electrical energy is picked up at the lower carrier layer and at the upper cover layer. This arrangement corresponds to a stack construction, wherein the terms lower and upper, denote the arrangement of the respective element in this stack construction.
    Another possible training to increase the energy output is that arranged one above the other, a repeated structure of carrier layer, active element and top layer is present. An insulating layer can be arranged between the cover layer and the support layer of the next TEE arranged thereon, or the cover layer and / or the carrier layer can be designed to be electrically insulating in order to prevent an electrical connection of the TEEs arranged one on top of the other. By this arrangement, no electrical interconnection is specified, in particular, the lead electrodes of the individual TEEe are led to the outside and thus arbitrarily externally interconnected, so that any desired series and / or parallel connection can be formed. In particular, so that the voltage level and the current output can be adapted to the desired application.
    Since the materials used allow a very simple processing, in particular an application by means of a printing method is possible, advantageously, a multilayer system can be constructed, which aulweist a plurality of superimposed or stacked active elements aulweist. Since it is possible to produce the discharge electrodes in the printing process, it is also possible to print several TEEs one above the other. For example, arrangements with 10 or more layers are conceivable.
    The object of the invention is also achieved by a power conversion element having a photovoltaic element and a subject thermal-electric Efement. The photovoltaic element has an entrance side for optical energy and a base opposite thereto. The thermoelectric element is arranged with its carrier layer thermally contacting on the base. A photovoltaic element heats up very strongly due to the solar irradiation, this heating possibly reducing the efficiency of the photovoltaic element, since the conversion properties are temperature-dependent. With the objective training is achieved, on the one hand, the photovoltaic element is cooled and that further, the energy previously lost as waste heat is additionally converted into electrical energy. This achieves an increase in the overall efficiency of about 2% compared to a pure photovoltaic conversion.
    Since the characteristics of the photovoltaic element and the thermoelectric element do not match, the subject TEE provides about 1.2V, a silicon photovoltaic element typically provides 0.5V, it is provided that the dissipation electrodes of the photovoltaic element and the drain electrodes of the thermoelectric element are connected via a voltage converter to an electrical contact portion. Thus, it is achieved for the user that this is provided with an element which provides electrical energy at a contact section. For a subsequent arrangement of an existing photovoltaic element or to simplify the production of a development of advantage, according to which the thermoelectric element is arranged by means of a clamping device or a clamping device on the photovoltaic element.
    It is also possible that the thermoelectric element is arranged by means of an adhesive bond to the photovoltaic element. This can be done, for example, by an adhesive bond or by lamination, wherein a good thermal connection between the photovoltaic element and the TEE must be given.
    In order to reduce the heat transfer resistance and / or to compensate for inaccuracies in the surface of the photovoltaic element on which the TEE is arranged, it is advantageous if a heat conducting means is arranged between the base surface and the carrier layer.
    For a better understanding of the invention, this will be explained in more detail with reference to the following figures. N2011 / 32000 ·· ··· »11 • ♦ * ···
    Each shows in a highly schematically simplified representation:
    1 shows an embodiment of the subject thermoelectric
    element;
    Fig. 2. a further possible embodiment of the subject thermoelectric element;
    Figure 3. an arrangement of the subject thermoelectric element on a photovoltaic element;
    Figure 4. a possible development of the TEE to increase the energy yield through a stack construction.
    Fig. 1 shows an embodiment of the subject thermoelectric element 1, in which the active element 2 is applied to the carrier layer 3 and wherein on the active element 2, the cover layer 4 is arranged. The active element 2 has an n-type semiconductor 5 and a p-type semiconductor 6, which adjoin one another at a p-n junction 7.
    The carrier layer 3 and the cover layer 4 at the same time form the discharge electrodes, wherein a temperature gradient 10 occurs when thermal energy 8, for example on the flat side 9 of the cover layer 4, inside the thermoelectric element 1, in particular in the active element 2, is applied , Comparable with the Seebeck effect, a charge carrier shift develops in the active element, which can be tapped off as electric voltage 11 via the discharge electrodes and fed to consuming 12. The closed circuit through the consumer 12 electrical energy is given off when thermal energy 8 from the thermoelectric element 1 so that there is a current flow 13 in the circuit and the electrical load 12 can be operated by converting thermal energy 8.
    In known thermoelectric elements semiconductor blocks are arranged side by side, each two semiconductor blocks are frontally connected via a contact bridge to form a series circuit with each other. The construction of a Peltier element is here assumed to be known, in particular it is known that a Peltier element has a hot and a cold flat side, wherein the definition of the hot or cold flat side with the polarity of the electrical voltage corresponds to the terminal electrodes. Since a semiconductor has a low electrical resistance and in particular also a low thermal resistance, heating of the warm flat side results in a thermal energy balance over the Peltier element. Without expensive additional measures, in particular without appropriate cooling of the cold flat side, the temperature of the cold flat side will match that of the warm, whereby the energy conversion comes to a standstill. In the subject TEE, the active element 2 is now formed in a so-called crossplane arrangement, that is, the pn junction 7 is in the path of the temperature gradient 10. Although this arrangement increases the electrical resistance of the active element 2, it is particularly advantageous As a result, the thermal resistance increases significantly. This means directly that the thermal compensation currents are significantly limited in the active element 2, so that cooling of the cold flat side 14 is not required for the subject TEE.
    To protect the entire thermoelectric element 1, but in particular the active element 2, it may optionally be provided that the TEE 1 is surrounded by a protective layer 15, the protective layer 15 being arranged at least in those sections in which the active element 2 is not protected from the carrier 3 or cover layer 4 protected against the environment. According to a further development, the carrier 3 or cover layer 4 can also be formed by a grid electrode, so that then preferably the protective layer 15 is disposed on the discharge electrodes 3, 4. Especially the protection of the active element 2 is important because the semiconductor 5, 6 can react chemically on contact with atmospheric oxygen and / or ambient humidity, whereby the desired material properties may possibly be lost. The protective layer may be formed, for example, by glass, a plastic film which may be coated with aluminum or Bomitrit, if necessary, to reduce the moisture and oxygen permeability, or by a metallized film. N2011 / 32000 13 ι »· · · · ····· • t ·············································································· ·· ··· ··
    On the one hand, this material forms a good mechanical protection of the thermoelectric element, but on the other hand does not interfere or only very slightly disturbs the entry of the thermal energy 8 into the warm flat side 9.
    The n-type semiconductor 5 of the subject thermoelectric element is formed from the cyanoferrate group, preferably iron (III) hexacyanoferrate (II / III). This material is known as a dye Prussian Blue, which adjusts in a surprising manner when using this material as n-type semiconductor in a pn junction, a lake bake effect comparable effect, namely that a temperature effect on this combination of materials, a release of electrical energy over the Derivative electrodes 26 results. On the one hand, materials from the cyanoferrate group are very cost-effective and, in particular, can be processed very easily, for example with all those processes which are suitable for applying a paint to a substrate. For the p-type semiconductor 6 there are hardly any restrictions, since this only has to serve as an acceptor. Preferably, the p-type semiconductor will be formed from a material which is easy to process, similar to the n-type semiconductor 5, and is adapted to the carrier 4 or cover layer 3 and the n-type semiconductor 5 with regard to the mechanical properties.
    2 shows a further possible embodiment of the subject thermoelectric element 1. To form the carrier layer 3 as a discharge electrode, an electrically conductive electrode 17 is arranged on a flat side 16 of the carrier layer 3, on which electrode 17 the active element 2 is arranged. Preferably, the p-type semiconductor 6 is arranged on the electrode 17, and the n-type semiconductor 5 is arranged thereon. The cover layer 4 is arranged on the n-type semiconductor 5 as a discharge electrode. Equally important, however, it is also possible that the n-semiconductor on the carrier layer, then the n-type semiconductor and then the cover layer are arranged. This embodiment has the advantage, for example, that the carrier layer 3 can be formed from an electrically insulating material, for example from a plastic film or glass, so that this TEE can be arranged directly on a thermal energy source with the carrier layer 3, without the user worrying about it the electrical insulation of the TEE 1 compared to the thermal N2011 / 32000 * 14
    Energy source. This embodiment has the further advantage that the carrier layer 3 can serve as a support layer for the subsequently applied layer structure 2. In particular, since the thickness of the active element 2 is preferably less than 1 mm, such a thin element, even with the drain electrodes applied thereon, presents a problem for further processing of thermal energy sources such that such a thin element can be easily damaged , By forming a correspondingly thick and thus mechanically stable carrier layer, the layer structure arranged thereon can be reliably protected against mechanical loads. In this embodiment as well, it is optionally possible to surround the layer structure of carrier 3 and cover layer 4 and the active element 2 with a protective layer 15, in order to thus again ensure a reliable partitioning, in particular of the active element 2 against environmental influences.
    3 shows a possible use of the objective, thenmoelectric element 1 in combination with a photovoltaic element 18. The photovoltaic element 18 has a light entry side 19, which is preferably oriented at an optimum angle to the sun. From the sun light 20 arrives as a mixture of different wavelengths on the light entrance side 19. For photovoltaic elements 18, it is known that they can convert only a portion of the incident light spectrum 20 into electrical energy. Although polycrystalline or monocrystalline silicon photovoltaic elements achieve the highest efficiency compared to other materials or photovoltaic technologies, they are limited to wavelengths of less than 1400 nm from the usable spectral range. A large part of the incident thermal infrared radiation is lost for energy, but leads to a very strong heating of the photovoltaic element, with temperatures well above 100 ° C can be achieved. However, such a strong heating may cause the conversion efficiency of the photovoltaic element to be deteriorated, because as the temperature increases, the electrical resistance of each photovoltaic conversion element also increases. N2011 / 32000 15 15
    • ···· · * * ♦ · * φ • ♦ ♦ ♦♦ * * * * * ··· ···
    The arrangement of the subject thermoelectric element 1, preferably on the back 21 of the photovoltaic element 18, the waste heat of the photovoltaic element 18 is used and converted into electrical energy. Thus, an increase in the overall efficiency of the energy conversion element 22 by at least 1% increase, with increases to at least 2% are possible. Compared with the effort required to achieve an increase in the efficiency in the 10th percentile range for a photovoltaic element 18, this embodiment achieves a significant increase in the overall efficiency, but at a fraction of the cost of increasing the efficiency of a photovoltaic device. Make Elements 18 necessary. In addition to the additional energy, the arrangement of the subject, thermal-electrical element 1 on a photovoltaic element 18 has the further advantage that the energy conversion, the photovoltaic element 18 is cooled, which is the operating parameters and thus the conversion efficiency of the individual photovoltaic Converter is beneficial. For a user, it is advantageous if a power conversion element 22 provides its power at a single connection point. However, since the generated voltages and especially the amount of energy provided between the photovoltaic element 18 and the thermoelectric element 1 differ, the two energy delivery ports can not be directly shadowed, it is advantageous if the energy conversion element 22, a voltage converter 23rd is available. This is connected to the drain electrodes 24 of the photovoltaic element 18 and to the drain electrodes 26 of the thermoelectric element 1. A voltage converter 23 is known to be able to combine the electrical energy levels of different electrical energy sources and provide them at a common energy delivery section 25.
    For reasons of illustration, the layer thicknesses of the thermoelectric element 1, in particular the thickness ratios of the carrier 3 and cover layer 4 and of the active element 2 are exaggerated in the figure. An optionally over the layer structure arranged protective layer is likewise from N2011 / 32000 16 16
    Representation reasons not shown in the figure. The thermoelectric element 1 is preferably attached with its carrier layer by gluing or laminating on the back 21 of the photovoltaic element 18, wherein in an adhesive bond, the adhesive must have a good heat conduction to a good thermal coupling of the TEEs to the photovoltaic To ensure element 18. Likewise it can be provided that between the carrier layer 3 and the back 21 of the photovoltaic element 18, a heat transfer medium is present, on the one hand to improve the temperature transport and possibly compensate for existing, small bumps of the back 21 and a good concern of the carrier layer 3 on the back 21 to ensure.
    In the case shown, the subject thermoelectric element 1 is arranged with its carrier layer on the back of the thermal energy source, here the photovoltaic element 18. Equally important, however, is also possible that the TEE is arranged with its cover layer 4 at the back. In the illustrated case, the carrier layer 3 is formed as an electrically non-conductive substrate, on which an electrode 17 is arranged, so as to form the discharge electrode. If the TEE is mounted with its electrically conductive cover layer 4 on the back of the photovoltaic element 18, provision must be made so that there is no short circuit or mutual electrical interference between the TEE 1 and the photovoltaic element 18.
    In particular, the use of printing processes provides a very cost-effective option for producing individual designs of TEEs up to a batch size of 1. By way of example, the prefabricated photovoltaic element can be arranged in a printing device, for example an inkjet printer, and then the thermoelectric element can be printed directly. In this case, the individual layers are applied with a print head, which is guided over the section to be printed. Possible is a stratified order, with an interim stored drying step. By appropriate design of the printhead with a drying device, the entire layer structure can be applied with the discharge electrodes in one pass. N2011 / 32000 17 * * MM • «· ·
    ··· * «· · t *» * ·· * ·· «i * · * · ··«
    A photovoltaic element 18, in particular each individual photovoltaic converter element is usually constructed in a layered manner in a known manner, the base substrate usually forming one of the two discharge electrodes. A possible further development may also be that the discharge electrode of the photovoltaic converter elements of the photovoltaic element 18 is formed by the electrically conductive carrier 3 or cover layer 4. In this embodiment, on the one hand, a discharge electrode is saved and further achieved a particularly compact design with a very good thermal coupling of the photovoltaic transducer elements to the thermoelectric element 1
    The particular advantage of the subject thermal-electrical element is summarized in that with a very cost-effective material, which can be very easily processed, a semiconductor element can be formed which emits electrical energy at the effect of temperature. The surprising thing is that materials from the cyanoferrate group exhibit this lake-beck effect-like effect, in particular that the preferred iron (III) hexacyanoferrate (II / III), which is generally known as a dye, exhibits this effect. In combination with my photovoltaic element, on the one hand, the overall efficiency is significantly increased by the additional energy shielding from the waste heat and, on the other hand, the operating savings tenants of the photovoltaic element are stabilized.
    Figure 4 shows a possible further embodiment of the subject thermoelectric element as a stack structure 27, in which a plurality of TEEe 1 are arranged one above the other. In the figure it is shown that on the cover layer 4 of the lower TEEs, another TEE 1 is arranged with its carrier layer. Since the carrier-3 and cover layer 4 each also form the discharge electrodes may be provided that between the two layers an electrically insulating layer 28 may be arranged. This completely self-sufficient TEEe are created, which are indeed arranged on top of each other and thus are in the same thermal energy flow, but are completely free in terms of their electrical wiring. FIG. 4 shows an electrical interconnection network 29, which in each case switches two TEEs in series in order to achieve a higher output voltage. The N2011 / 32000 18 • i ····· ··· · ♦ · Φ * · * · · φ ♦ • · * · * »
    Series circuits are connected in parallel to increase the output current. As a result of multiple superimposing the energy yield can be significantly increased. Since a single TEE can deliver an electrical voltage of up to 1.2V and a current of up to 3A / mz, a series-wide battery life of up to about 3V can be expected. Parallel connection is particularly advantageous if the electrical output parameters can be adjusted in a simple way. For example, to be able to operate directly a consumer, or possibly adjust the output voltage in a downstream voltage converter.
    A development may consist in that no insulating layer 28 is present, the cover layer 4 of the lower and the Trägeriage 3 of the TEEs disposed thereon are thus in electrical contact. In this case, one of the two layers could be omitted, so that the cover layer of the lower, forms the carrier layer of the element arranged thereon. In this case, the entire stack structure 27 is connected in series, the output voltage is then tapped on the support layer 3 of the lowermost element 1 and on the cover layer 4 of the uppermost element 1.
    Finally, it should be noted that in the differently described embodiments, the same parts are provided with the same reference numerals and the same component names, the disclosures contained throughout the description can be mutatis mutandis to the same parts with the same reference numerals or identical component names. Also, the location information chosen in the description, such as top, bottom, side, etc. related to the immediately described and illustrated figure and are to be transferred to the new situation mutatis mutandis when a change in position. Furthermore, individual features or combination of mercury combinations from the illustrated and described different exemplary embodiments can also represent separate, inventive or inventive solutions. All statements on ranges of values in the description of the present invention should be understood to include any and all sub-ranges thereof, e.g. the indication 1 to 10 is to be understood as meaning that all partial ranges, excluded from the lower limit 1 and the upper limit 10, are included, that is to say, from the lower limit 1 and the upper limit 10. all subregions begin with a lower limit of 1 or greater and end at an upper limit of 10 or less, e.g. 1 to 1.7, or 3.2 to 8.1 or 5.5 to 10.
    The embodiments show possible embodiments of the thermal-electric generator, it being noted at this point that the invention is not limited to the specifically illustrated embodiments thereof, but also various combinations of the individual embodiments are mutually possible and this variation possibility due to the teaching technical action by objective invention in the skill of working in this technical field expert. So are all conceivable embodiments, which are possible by combinations of individual details of the illustrated and described embodiment variant, includes the scope of protection.
    FIGS. 2 to 4 each show a further embodiment of the thermoelectric generator, which may be independent of itself, wherein the same reference numerals or component designations are used again for the same parts as in the preceding figures. To avoid unnecessary repetition, reference is made to the detailed description in the preceding figures.
    For the sake of order, it should finally be pointed out that, for a better understanding of the design of the thermoelectric generator, this or its components have been shown partially unevenly and / or enlarged and / or reduced in size.
    The task underlying the independent inventive solutions can be taken from the description.
    Above all, the individual embodiments shown in FIGS. 1-3 can form the subject of independent solutions according to the invention. The tasks and solutions according to the invention which are the subject matter of the present invention are those which are incorporated herein by reference Detailed descriptions of these figures can be seen. N2011 / 32000 ·· · ** · ♦ #
    Reference Numbers 1 Thermoelectric element (TEE) 2 Active element 3 Carrier layer, lead-out electrode 4 Cover layer, lead-out electrode 5 n-type semiconductor 6 p-type semiconductor 7 pn junction 8 Thermal energy 9 Flat side, warm 10 Temperature gradient 11 Electrical voltage 12 Load 13 Electrical current 14 Flat side, cold 15 Protective layer 16 Flat side 17 Electrode 18 Photovoltaic element 19 Light entrance side 20 Light 21 Base surface, rear side 22 Energy conversion element 23 Voltage transformer 24 Dissipation electrodes of the photovoltaic element 25 Energy delivery section 26 Dissipation electrodes of the thermoelectric element 27 Plug structure 28 Insulating layer 29 Electrical interconnection network N2011 / 32000
    权利要求:
    Claims (24)
    [1]
    ··· 1

    1. Thermoelectric element (1), comprising an electrically conductive carrier layer (3), an active element (2), an electrically conductive cover layer (4), wherein the carrier layer ( 3) and the cover layer (4) form the discharge electrodes, wherein furthermore the active element (2) has a pn junction (7) from an n-type semiconductor (5) to a p-type semiconductor (6) and wherein the active element ( 2) between the carrier layer (3) and the cover layer (4) and is electrically conductively connected thereto, characterized in that the n-type semiconductor (5) is formed from the group of cyanoferrate.
    [2]
    2. Thermoelectric element according to claim 1, characterized in that the active element (2) on the carrier layer (3) is arranged and on the active element (2), the cover layer (4) is arranged.
    [3]
    3. Thermoelectric element according to one of claims 1 or 2, characterized in that the carrier layer (3) and the cover layer (4) are arranged substantially parallel to each other.
    [4]
    4. Thermoelectric element according to one of claims 1 to 3, characterized in that the active element (2) is ausgebii-det as a layer structure.
    [5]
    5. Thermoelectric element according to claim 4, characterized in that the p-type semiconductor (6) is arranged on the carrier layer (3).
    [6]
    6. Thermoelectric element according to one of claims 1 to 5, characterized in that the n-type semiconductor (5) is formed by hexacyanoferrate. N2011 / 32000 2 * · ♦ ··· ♦ «· * ·« «• ·« «* • · • 9
    [7]
    7. Thermoelectric element according to claim 6, characterized in that the n-type semiconductor (5) is formed by iron (III) hexacyanoferrate (II / III).
    [8]
    8. Thermoelectric element according to claim 6 or 7, characterized in that the n-type semiconductor (5) is doped with at least one substance from the group of metal oxides, for example with T1O2, Si-P, GaAs, InSb, CdS, ZnSe, Ge, Te, Al2O3, Ρβ2θ3 ·
    [9]
    9. Thermoelectric element according to one of claims 1 to 8, characterized in that the p-type semiconductor (6) is formed from one of the group PE-DOT: PSS, GaSb / PEDOT and Si.
    [10]
    10. Thermoelectric element according to one of claims 1 to 9, characterized in that the carrier layer (3) is formed by a transparent substrate, on which a transparent electrode is applied.
    [11]
    11. Thermoelectric element according to one of claims 1 to 10, characterized in that the carrier layer (3) is formed by an elastically rückstellba-res substrate.
    [12]
    12. Thermoelectric element according to one of claims 1 to 11, characterized in that the carrier layer (3) and / or the cover layer (4) is formed by a metallic conductor.
    [13]
    13. Thermoelectric element according to one of claims 1 to 12, characterized in that the carrier layer (3) is formed by a collector layer.
    [14]
    14. Thermoelectric element according to one of claims 1 to 13, characterized in that the carrier layer (3) and / or the cover layer (4) is formed by an electrically conductive grid structure. N2011 / 32000 3 3 ·· φ · · · · · · · · · · »» | «· · · · · T · f ·« · · ♦ * # ·· «· I ·· · Φ · |« · | · | ··· ···
    [15]
    15. Thermoelectric element according to one of claims 1 to 14, characterized in that over the portions of the active element (2) which are not covered by the carrier layer (3) and the cover layer (4), a protective layer (15 ) is applied.
    [16]
    16. Thermoelectric element according to one of claims 1 to 15, characterized in that on the active element (2) respectively facing away from the carrier layer (3) and / or the cover layer (4) a protective layer (15) is applied ,
    [17]
    17. Thermoelectric element according to one of claims 1 to 16, characterized in that the active element (2) has a thickness in the range of 10pm to 1mm, preferably in the range of 10pm to 50mm.
    [18]
    18. Thermoelectric element according to one of claims 1 to 17, characterized in that on the cover layer (4) at least one further active element (2) is arranged with a cover layer.
    [19]
    19. Thermoelectric element according to one of claims 1 to 18, characterized in that arranged one above the other, a repeated structure of carrier layer, active element and cover layer is present.
    [20]
    An energy conversion element (22) comprising a photovoltaic element (18) and a thermoelectric element (1) according to any one of claims 1 to 19, wherein the photovoltaic element (18) has an optical energy input side (19) (20) and one of these opposite base surface (21), characterized in that the thermoelectric element (1) with its carrier layer (3) is arranged thermally contacting on the base surface (21).
    [21]
    21. Energy conversion element according to claim 20, wherein the photovoltaic element (18) generates its generated electrical energy via lead-out electrodes N2011 / 32000 4 • ·· v # ···· ···················· (24), characterized in that the discharge electrodes (24) of the photovoltaic element (18) and the discharge electrodes (26) of the thermoelectric element ( 1) are connected via a voltage transformer (23) with an electrical contact portion (25).
    [22]
    22. Energy conversion element according to one of claims 20 or 21, characterized in that the thermoelectric element (1) by means of a clamping device or a clamping device to the photovoltaic element (18) is arranged.
    [23]
    23. Energy conversion element according to one of claims 20 to 22, characterized in that the thermoelectric element (1) by means of an adhesive connection to the photovoltaic element (18) is arranged.
    [24]
    24. Energy conversion element according to one of claims 20 to 23, characterized in that between the base surface (21) and the carrier layer (3) is arranged a heat conducting means. Dl Eduard Buzetzki, DDr. Karl Kirchheimer, Di Franz Padinger, Ing. Karl Schiller through 'z < > - Attorneys Burger & Partner Attorney at Law N2011 / 32000
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    同族专利:
    公开号 | 公开日
    BR112014015216A2|2017-07-04|
    AT512315B1|2014-05-15|
    US20140366925A1|2014-12-18|
    EP2795687A2|2014-10-29|
    WO2013090961A2|2013-06-27|
    WO2013090961A3|2013-12-27|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US20110284049A1|2008-12-26|2011-11-24|Fujitsu Limited|Thermoelectric conversion device and method of manufacturing the same, and electronic apparatus|
    GB9307689D0|1993-04-14|1993-06-02|King Peter|Differential voltage cell|US9464124B2|2011-09-12|2016-10-11|Moderna Therapeutics, Inc.|Engineered nucleic acids and methods of use thereof|
    WO2015039185A1|2013-09-17|2015-03-26|Roger Webb|Modular unit for attachment to solar panel|
    IT201900003611A1|2019-03-12|2020-09-12|Novaprecisio S R L|Exchanger apparatus for the generation of electricity and heat.|
    法律状态:
    2017-08-15| MM01| Lapse because of not paying annual fees|Effective date: 20161219 |
    优先权:
    申请号 | 申请日 | 专利标题
    ATA1841/2011A|AT512315B1|2011-12-19|2011-12-19|THERMO-ELECTRIC ELEMENT|ATA1841/2011A| AT512315B1|2011-12-19|2011-12-19|THERMO-ELECTRIC ELEMENT|
    BR112014015216A| BR112014015216A2|2011-12-19|2012-12-12|thermoelectric element|
    EP12821006.9A| EP2795687A2|2011-12-19|2012-12-12|Thermoelectric element|
    PCT/AT2012/050193| WO2013090961A2|2011-12-19|2012-12-12|Thermoelectric element|
    US14/366,400| US20140366925A1|2011-12-19|2012-12-12|Thermoelectric element|
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