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    • 专利摘要:
    The present invention relates to an electrochemical module (4) comprising a porous, plate-shaped, metallic carrier substrate (8) with a gas-permeable, central region (10) and an edge region (12), one in the central region on a first side (13). at least one metallic, gas-tight housing part (14), which is connected to the edge region of the carrier substrate via a welded connection (18), and a gas-tight zone (32) extending from the layer structure to the housing part. having. The gas-tight zone has a gas-tight surface section (30) which extends from the layer structure on the first side of the carrier substrate at least to the welded connection, and the welded connection, by which the gas-tight surface section is connected in a gas-tight manner to the housing part and its weld zone (36 ) extends only through part of the thickness of the carrier substrate.
    公开号:AT14455U2
    申请号:TGM209/2015U
    申请日:2015-07-14
    公开日:2015-11-15
    发明作者:Wolfgang Schafbauer；Markus Kögl；Matthias Rüttinger；Christian Bienert；Marco Brandner
    申请人:Plansee Se；
    IPC主号:
    专利说明:

    description
    ELECTROCHEMICAL MODULE
    The present invention relates to an electrochemical module, in particular a fuel cell module comprising a porous, plate-shaped, metallic carrier substrate having a gas-permeable central region and an edge region surrounding the central region, a layer structure arranged in the central region on a first side of the carrier substrate with at least one electrochemically active layer, at least one metallic, gas-tight housing part, which is connected to the edge region of the carrier substrate via a welded connection, and has a gas-tight zone extending from the layer structure to the gas-tight housing part.
    The electrochemical module according to the invention is, inter alia, as a high-temperature fuel cell or solid oxide fuel cell (SOFC), as a solid oxide electrolysis cell (SOEC, solid oxide electrolyzer cell) and as a reversible solid oxide fuel cell (R-SOFC ) can be used. For the comparatively thin layers of the layer structure, a mechanically supporting component is required, which may be formed, for example, by one of the electrochemically active layers of the layer structure, e.g. by an electrolyte, an anode or a cathode of the functional layers, each of which is correspondingly thick, or by a separately formed component of these functional layers, e.g. by a ceramic or metallic carrier substrate. The present invention relates to the latter concept with a separately formed, metallic carrier substrate, which forms the supporting function for the layers of the layer structure. Such metal-supported cell (MSC) supported systems are advantageous in thermal and redox cyclability as well as in mechanical stability. By in MSCs, the electrolyte whose electrical resistance decreases with decreasing thickness and with increasing temperature can be made comparatively thin (eg with a thickness in the range of 2 to 10 pm, preferably in the range of 3 to 5 pm), MSCs can in a 600 ° C to 800 ° C (while SOFCs are operated in part at operating temperatures of up to 1000 ° C). Due to their specific advantages, MSCs are particularly suitable for mobile applications, such as for the electrical supply of passenger cars or commercial vehicles (APU -auxiliary power unit).
    Compared to all-ceramic systems, these metallic ceramic MSC systems (ie metallic carrier substrate with at least partly ceramic layer structure) are characterized by significantly reduced material costs and new possibilities of stack integration, in that the metallic carrier substrate has a connection by means of soldering and welding processes. which are low cost and long term resistant joining techniques. In the context of stack integration, the individual metal substrate-supported cells must in fact be connected to corresponding (metallic) housing parts (for example frame plate, interconnector, etc.), stacked in a stack and electrically connected in series. The housing parts accomplish in the individual cells of the stack each separate gas supply of the process gases, which means in the case of a fuel cell, the supply of the fuel to the anode and the oxidant to the cathode, and the discharge of the gases produced during the electrochemical reaction. Furthermore, via these housing parts, the electrical connection of the individual cells of a stack with each other in series.
    For the operation is essential in the individual cells, the reliable, gas-tight separation of the two process gas spaces, which are formed based on a cell on the two sides of the electrolyte. A particular challenge is the connection of the metal substrate-supported cell to the adjacent housing part (s), because the transition region from the layer structure, in the region of which the electrolyte effects the process gas separation, to the adjacent housing part (s) (s) is (at least for the process gases and the resulting gases) gas-tight form and this gas tightness must be ensured over long periods of use in the event of mechanical stress and temperature fluctuations.
    A method for producing a fuel cell is known from EP 2 174 371 B1, in which a metallic carrier substrate having gas passage openings provided in the edge region is obtained by producing a planar, porous body by powder metallurgy, the edge region of the body by uniaxial pressing or rollers compacted to the gas density and provided with gas passage openings. In the central, porous region of the metallic carrier substrate, the layer structure with electrochemically active layers is applied. In EP 1 278 259 B1, an arrangement is described in which a metallic carrier substrate is gas-permeable and has a gas-tight zone which extends through the entire thickness of the substrate and is fixed to a housing by welding and / or soldering.
    Accordingly, the object of the present invention in the cost-effective provision of an electrochemical module with a metallic carrier substrate and arranged in a central, porous region of the carrier substrate layer structure with at least one electrochemically active layer, wherein a transition region between the layer structure and a to the Carrier substrate adjacent housing part is gas-tight at least for the process gases and the resulting gases and this gas tightness is ensured over long periods of use, even under mechanical loads and temperature fluctuations.
    The object is achieved by an electrochemical module according to claim 1 and by a method for producing an electrochemical module according to claim 15. Advantageous developments of the invention are specified in the dependent claims.
    According to the present invention, the electrochemical module comprises a porous, plate-shaped, metallic carrier substrate having (with respect to its main extension plane) a gas-permeable central region and an edge region surrounding the central region, one in the central region on a first side of the Carrier substrate arranged layer structure with at least one, in particular at least two electrochemically active layer (s), at least one metallic, gas-tight housing part which is connected to the edge region of the carrier substrate via a welded joint, and one of the layer structure (at least) to the gas-tight housing part extending, gas-tight zone. In this case, the gas-tight zone has a gas-tight surface section, which extends from the layer structure on the first (ie, the layer structure facing) side of the carrier substrate (at least) up to the welded joint, and the welded joint, through which the gas-tight surface portion to the housing part gas-tight and its welding zone extending from the first side in the thickness direction to an opposite, second side of the carrier substrate only by a part of the thickness of the carrier substrate, on.
    By according to the invention, the gas-tight zone extends only superficially on the first side of the carrier substrate, it is possible according to the present invention, a powder metallurgically produced in a part carrier substrate, which is not to be pressed in the edge region to the gas-tightness. Especially with difficult to press materials, as they form chromium-based or a considerable proportion of chromium-containing alloys, thereby significantly lower compression pressures are required, thereby reducing manufacturing costs and the rejects reduced share. Furthermore, more constant material properties are achieved along the main extension plane of the carrier substrate, which reduces the risk of cracking and distortion, especially with high temperature changes and / or mechanical loads. Since the welding zone extends from the first side only through part of the thickness of the carrier substrate, only a comparatively slight change in the material properties within the carrier substrate is brought about by the welded connection. Accordingly, it is ensured that the advantageous material properties of the carrier substrate obtained by the powder metallurgical production process are largely retained. If, in contrast, the (gastight) welding zone would extend through the entire thickness of the carrier substrate, a significantly higher energy input would be required when welding the carrier substrate due to the relatively large, necessary welding zone. Such a design would add not only to increased manufacturing costs, but also to higher component distortion, grain coarsening in the microstructure of the areas adjacent to the weld zone which adversely affects the material properties, as well as the risk of cracking or even fracture mechanical and / or thermal stress in the area of the weld zone.
    In addition to the preferred application as a high-temperature fuel cell or solid oxide fuel cell (SOFC), the electrochemical module according to the invention is also available as a solid oxide electrolyzer cell (SOEC) and as a reversible solid oxide fuel cell (RN). SOFC) can be used. In the following, the construction and functioning of metal substrate-supported high-temperature fuel cells (SOFCs), such as are feasible with the electrochemical module according to the invention, are discussed. Such metal substrate-supported SOFCs are the preferred application for the electrochemical module of the present invention. A metal substrate-supported cell (MSC) consists of a porous, plate-shaped, metallic carrier substrate having a preferred thickness in the range of 170 μm to 1.5 mm, in particular in the range of 250 μm to 800 μm, in a gas-permeable, central region a layer structure with the anode, electrolyte and cathode as electrochemically active layers and possibly with other layers (eg diffusion barriers of eg cerium-gadolinium oxide or lanthanum-chromium oxide, etc., between the carrier substrate and anode, diffusion barrier of eg cerium-gadolinium Oxide between the electrolyte and the cathode) is applied. In the case of the electrochemical module according to the invention, not all of the electrochemically active layers have yet to be applied; rather, the layer structure can also have only one electrochemically active layer (eg the anode), preferably two electrochemically active layers (eg anode and electrolyte), and the others Layers, in particular those for completing an electrochemical cell, are applied later. The application of the layers of the layer stack is preferably carried out by means of PVD (PVD: Physical Vapor Deposition), e.g. Sputtering, and / or thermal coating processes, e.g. Flame spraying or plasma spraying and / or wet chemical processes, e.g. Screen printing, wet powder coating, etc., wherein for the realization of the entire layer structure of an electrochemical cell and several of these methods can be used in combination. The anode is preferably the electrochemically active layer following the carrier substrate, while the cathode is formed on the side of the electrolyte remote from the carrier substrate. Alternatively, however, a reverse arrangement of the two electrodes is possible.
    Both the anode (e.g., formed from a composite of nickel and yttria fully stabilized zirconia) and the cathode (e.g., formed from mixed conducting perovskites such as (La, Sr) (Co, Fe) O 3) are gas permeable. Between anode and cathode, a gas-tight solid electrolyte is formed of a solid ceramic material of metal oxide (e.g., yttria fully stabilized zirconia) which is conductive to oxygen ions but not to electrons. Alternatively, the solid electrolyte may also be conductive for protons, but not for electrons, this being the younger generation of SOFCs (eg solid electrolyte of metal oxide, in particular of barium-zirconium oxide, barium-cerium oxide, lanthanum tungsten oxide or lanthanum -Niob oxide). During operation of the SOFC, the anode is supplied with fuel (for example hydrogen or conventional hydrocarbons, such as methane, natural gas, biogas, etc., possibly completely or partially pre-reformed) and is catalytically oxidized there with the emission of electrons. The electrons are derived from the fuel cell and flow via an electrical load to the cathode. At the cathode, an oxidant (eg, oxygen or air) is reduced by receiving the electrons. The electrical circuit is closed by flowing in an oxygen ion conductive electrolyte, the oxygen ions formed at the cathode via the electrolyte to the anode and react at the corresponding interfaces with the fuel.
    In a solid oxide electrolysis cell (SOEC), in which a redox reaction is forced using electric current, such as a conversion of water into hydrogen and oxygen, the metal substrate-assisted cell (MSC) is according to the above-explained Structure trained. Here, the layer described above with respect to the SOFC as anode corresponds to the cathode and vice versa. A reversible solid oxide fuel cell (R-SOFC) is operable as both SOEC and SOFC.
    "Gas-tight" means in the present context in particular that the leakage rate with sufficient gas-tightness by default < 10'3 hPa * dm3 / cm2 s (hPa: hectopascal, dm3: cubic decimeter, cm2: square centimeter, s: second) is (measured under air with pressure increase method with the measuring instrument of Dr. Wiesner, Remscheid, type: Integra DDV at a Pressure difference dp = 100 hPa). Such gas-tightness is realized in particular in the region of the gas-tight zone and in the region of the layer structure.
    The edge region is in particular arranged circumferentially around the gas-permeable, central region. The at least one housing part, e.g. As a sheet metal part of high chrome steels (eg available on the market under the names Crofer® 22 H, Crofer® 22 APU, ZMG® 232L) may be formed, preferably also circumferentially around the edge region and is around the entire circumference of the edge region with this connected via the welded joint. The fusion zone formed by a fusion structure, which according to the invention extends only through part of the thickness of the carrier substrate, is e.g. from a micrograph taken in cross-section through the welded joint, visible under a light microscope or under a scanning electron microscope.
    According to a further development, the central area and the peripheral area are monolithic, i. from a single piece, which means that it is not a matter of several, possibly also by a material connection (for example, soldering, welding, etc.) interconnected components. According to a further development, the carrier substrate is made of a Cr (chromium) and / or Fe (iron) based material combination, i. the Cr and Fe content amount to a total of at least 50% by weight, produced in one piece by powder metallurgy. The powder-metallurgical and one-piece production can be seen on the basis of the microstructure of the carrier substrate, which has a typical sintered structure below the gas-tight zone over its entire main extension plane, in which the individual grains are interconnected depending on the degree of sintering over more or less pronounced sintered necks. In particular, the Cr and Fe content in total is at least 80% by weight, preferably at least 90% by weight. The carrier substrate can in particular be produced in accordance with AT 008 975 U1, it can therefore consist of an Fe-based alloy with Fe> 50% by weight and 15 to 35% by weight of Cr; 0.01 to 2% by weight of one or more elements of the group Ti (titanium), Zr (zirconium), Hf (hafnium), Mn (manganese), Y (yttrium), Sc (scandium), rare earth metals; 0 to 10 wt% Mo (molybdenum) and / or Al (aluminum); 0 to 5% by weight of one or more metals of the group Ni (nickel), W (tungsten), Nb (niobium), Ta (tantalum); 0.1 to 1 wt% O (oxygen); Residual Fe and impurities exist, wherein at least one metal of the group Y, Sc, rare earth metals and at least one metal of the group Cr, Ti, Al, Mn form a mixed oxide. For forming the carrier substrate, it is preferable to use a powder fraction having a particle size of < 150pm, more preferably < 100pm. Thus, the surface roughness can be kept sufficiently small to ensure good coatability for functional layers. Furthermore, the smaller the particle size, the thinner the carrier substrate is to be formed. After the sintering process, the porous substrate has a porosity of preferably 20 to 60%, in particular 40 to 50%. It preferably has a thickness in the range from 170 μm to 1.5 mm, in particular in the range from 250 μm to 800 μm.
    According to a further embodiment, the carrier substrate is formed to be porous below (i.e., toward the second side) of the gas-tight surface portion and below the welding zone of the welded joint. In particular, it is still permeable to gas in this porous section. In this way, largely the same material properties of Trä gersubstrats be achieved by the mandatory gas-permeable, porous, central region up to and including its edge region. Furthermore, a discontinuous transition involving the risk of material weakness and fatigue, such as cracking, etc., is avoided. In the case of a powder metallurgically produced carrier substrate, it is therefore not necessary to gas-tightly press the edge region in the solid material, which is advantageous in view of the difficult pressability and processability of Cr-containing powders. According to a development, the carrier substrate has a porosity in the porous portion of the edge region (i.e., excluding the regions of the gas-tight zone) which is reduced in relation to the porosity of the central region. In the case of a carrier substrate produced by powder metallurgy, this can be done, for example, by compacting the edge area, in particular by uniaxial pressing or profile rolling. Preferably, in the compaction process, a continuous transition between the central region and the edge region is produced, whereby the occurrence of stresses in the carrier substrate is avoided. Such a reduced porosity, which is associated with an increased density, is advantageous for the formation of the gas-tight surface portion. If this is e.g. formed by an applied cover layer, the gas-tight construction is made possible by the reduced porosity and their adhesion improved. On the other hand, if the surface section is produced by superficial melting, the locally occurring volume change is kept low due to the reduced porosity. According to a development, the carrier substrate has a porosity in the porous section of the edge region in the range of 3% to 20% inclusive, preferably in the range of 4% to 12% inclusive. Within these porosity areas, gas-tightness is generally not yet given.
    According to a development, the welding zone extends from the first side in the thickness direction to the second side to a depth t of 20% < t < 80% of the thickness d, which has the carrier substrate in the edge region. Preferably, the depth t is 30% < t < 50% of the thickness d. Within these areas, on the one hand a connection between the housing part and the carrier substrate is achieved with sufficiently high strength, on the other hand, the energy input is kept low during welding and the carrier substrate remains at least partially preserved in its original structure.
    According to a further development, the housing section of the housing part connected to the welded connection is arranged overlapping the edge area of the carrier substrate and on the first side of the carrier substrate, in particular the housing section lies flat in the overlap area on the edge area of the carrier substrate. By such a configuration, the mechanical stability of the welded joint between the housing part and the carrier substrate is increased and at the same time facilitates the implementation of the welding process.
    According to a further development, the welding zone extends in the thickness direction completely through the housing part and only partially into the carrier substrate. In particular, the weld zone extends substantially perpendicular to the main extension plane of the carrier substrate or along the thickness direction. This type of welded joint is particularly easy to produce in an overlapping arrangement between the housing part and edge region of the carrier substrate in the overlapping region. According to a development, the welding zone is formed on the edge of the carrier substrate and / or on the edge of the housing part and extends in the thickness direction only by a part of the thickness of the housing part. In particular, it extends in the thickness direction to a depth T of 20% < T < 80% of the thickness of the housing part in the area to be joined, preferably the depth T is 30% < T < 50% of this thickness. In this way, the energy input during welding can be kept particularly low, whereby the risk of distortion of the components is further reduced.
    According to one embodiment, the housing part is frame-shaped and extends circumferentially around the edge region of the carrier substrate. In this way, a circumferentially gas-tight connection of the carrier substrate arrangement, their mechanical support and their electrical contacting are ensured in a reliable and mechanically loadable manner. According to a further development, the housing part is a frame plate provided with gas passages, wherein the frame plate is connected to an interconnector in the area of its outer edge, which is in particular a gas-tight connection (eg welded connection, possibly also with an overlap area between frame plate and interconnector). The gas passage openings serve to supply and discharge of the process gases. The interconnector, which is also part of the housing, is arranged in the stack between in each case two superimposed carrier substrate arrangements, which each have an electrochemical cell. By means of a structure formed on both sides (for example knobbed or wave-shaped), it effects the supply and removal of the process gases over substantially the entire surface of the electrochemical cell or the central region of the carrier substrate on both sides. Furthermore, neighboring carrier substrate arrangements, each having an electrochemical cell, are electrically contacted with one another in series therewith. Preferably, the interconnector is formed by a correspondingly shaped, metallic sheet metal part. A gas-tight gas space on one side of the electrolyte, in particular on the side facing the associated carrier substrate, is thus created in that the carrier substrate arrangement is circumferentially and gas-tightly connected to the frame-shaped housing part and the frame-shaped housing part in turn peripherally and gas-tightly connected to the interconnector is. That is, a kind of housing is formed by the frame-shaped housing part and by the interconnector and so realizes a gas-tight process gas space. The sealing and the achievement of the respective desired gas flow in the region of the gas passage openings is typically achieved by separate inserts, seals and the targeted application of sealing compound (for example glass solder).
    A second alternative is to connect the carrier substrate directly to the interconnector, which also forms a housing part and according to the features described above with respect to. The interconnector may be formed in a gastight manner. In this variant, the correspondingly larger edge region of the carrier substrate would take over the above-described function of the frame-shaped housing part, in particular the gas-tight surface section would extend from the layer structure to the welded connection through which the edge region is connected to the interconnector (housing part). Preferably, the gas passage openings would also be provided in the peripheral area, e.g. be introduced by punching, cutting, embossing or similar processes in the edge region. Preferably, the walls of the gas passage openings formed within the carrier substrate (e.g., cylindrical) are also gas-tight. In particular, the gas-tight walls of the gas passage openings gas-tight to the gas-tight surface portion, which is indeed circumferentially formed around the gas passage openings, gas-tight, whereby a process gas guide is ensured without leakage. A gas-tight construction of the walls of the gas passage openings is achieved, for example, by introducing these gas passage openings by means of thermal processes, such as laser, electron, ion, water jet or friction cutting, because these processes lead to a superficial melting of the carrier substrate material, whereby after solidification a gas-tight portion extending superficially along the walls and having a melt phase of the carrier substrate material, in particular, which is formed entirely of a melt phase of the carrier substrate material.
    A third variant is that the edge region of the carrier substrate is provided in the manner shown above with gas passage openings and outside the gas passage openings is connected peripherally and gas-tight manner to a frame-shaped housing part. The frame-shaped housing part is then, as described above with respect to the first variant, circumferentially and gas-tightly connected to an interconnector.
    According to one embodiment, the gas-tight surface portion on an electrolyte, which is part of the layer structure and extends beyond the layer structure on the first side of the carrier substrate. In particular, it extends to the welded joint.
    Typically, it has a thickness in the range of 2-10 pm, preferably 3-5 pm. It can also extend beyond the welded joint, in particular to an outer joint
    Edge of the support substrate (the heat transfer during the manufacture of the weld is not appreciably affected by the electrolyte at the stated thickness range of 3-5 gm). By virtue of the electrolyte having the required gas-tight properties and being required for the realization of the layer structure, it is advantageous to use it for the realization of all or part of the gas-tight surface section.
    According to a development, the gas-tight surface portion has a superficial, formed from the carrier substrate material, gas-tight portion of the carrier substrate having a melt phase of the carrier substrate material on. This is achieved in particular by means of a surface after-treatment step which leads to the formation of a melt phase from the material of the carrier substrate in a region of the carrier substrate which is near the surface. Such a surface post-treatment step may be accomplished by local superficial melting of the porous support substrate material, i. short local heating to a temperature higher than the melting temperature can be achieved and carried out by means of mechanical, thermal or chemical process steps, for example by means of grinding, blasting or by application of laser, electron or ion beams. Preferably, a superficial portion having the melt phase is achieved by exposing focused beams of high energy photons, electrons, ions, or other suitable focusable energy sources to the surface of the edge region to a certain depth of effect. Due to the local melting and rapid cooling after melting, a modified metallic structure with vanishing or extremely low residual porosity forms in this area. This modified microstructure having a melt phase is well distinguishable from that of the supporting substrate characterized by a sintered structure, for example, in a light microscopic or SEM (SEM) micrograph of a cut image along the thickness direction through the support substrate. The melting can be done once or several times in succession. The melting depth is in this case adapted to the requirement of gas tightness, a melting depth of at least 1 pm, in particular from 15 pm inclusive to 50 pm, particularly preferably from 20 pm up to and including 40 pm, has been found to be suitable. The superficial portion having the melt phase therefore extends from the surface of the carrier substrate measured around this melting depth into the carrier substrate. In the superficial portion having the melt phase, other phases may be present in addition to the melt phase, for example amorphous structures. Particularly preferably, the superficial portion having the melt phase is completely formed from the melt phase of the carrier substrate material. The reflow process results in a very smooth surface of low surface roughness. This allows a good coatability for functional layers such as an electrolyte layer, which preferably extends at least over a part of the superficial portion having the melt phase, starting from the layer structure. Such a surface post-treatment step is e.g. described in WO 2014/187534 A1.
    According to a further development, the gas-tight surface portion has a gas-tight sealant applied to the carrier substrate, such as e.g. a glass solder, a metal solder or an inorganic paste, which may also be cured during operation of the electrochemical module, on.
    The gas-tight surface portion may also be formed of a plurality of gas-tight portions, in particular of a combination of an electrolyte, a superficial, formed from the carrier substrate material having a melt phase, gas-tight portion of the carrier substrate and / or a gas-tight sealant. Based on the main extension plane of the plate-shaped carrier substrate, these may also be formed in several layers one above the other, if necessary such overlapping areas may also be provided only in sections.
    The present invention further relates to a method for producing an electrochemical module, comprising the following steps: A) powder metallurgy producing a porous, plate-shaped, metallic
    Carrier substrate, which is gas-permeable at least in a central region which is surrounded by an edge region; B) Gas-tight bonding of a layer structure to at least one metallic, gas-tight housing part on a first side of the carrier substrate by the layer structure is applied with at least one electrochemically active layer in the central region on the first side of the carrier substrate by the at least one metallic, gas-tight housing part is connected to the edge region of the carrier substrate via a welded connection such that the welding zone extends from the first side in the thickness direction to an opposite, second side of the carrier substrate only by a part of the thickness of the carrier substrate, and by a gas-tight surface portion formed on the first side of the carrier substrate up to the weld joint from the layer structure is formed on the surface.
    Essentially the same advantages as described above with regard to the electrochemical module according to the invention can be achieved with the method according to the invention. The further developments and optional additional features described above in relation to the electrochemical module are also correspondingly implementable within the scope of the presently claimed production process and lead to the abovementioned advantages. The individual steps to be carried out in the context of "gas-tight binding (see step B) can be carried out in different orders. If the gas-tight surface section extends beyond the welded connection in the direction of the outer edge of the carrier substrate, then the gas-tight surface section is preferably to be formed before the housing part is connected to the edge region of the carrier substrate via a welded connection.
    To determine the porosity of the various areas of the carrier substrate cross sections are made perpendicular to the main extension plane of the plate-shaped carrier substrate by sawed out by means of a diamond wire saw parts from the carrier substrate, these parts fixed in a embedding (epoxy resin, for example) and ground after curing (successively with each fine sandpaper). Subsequently, the samples are polished with a polishing suspension and finally electrolytically polished. These samples are analyzed by SEM (Scanning Electron Microscope) and a BSE detector (BSE: back-scattered electrons) (BSE detector or 4-quadrant ring detector). As a scanning electron microscope while the field emission device "Ultra Plus 55" Zeiss was used. The SEM image is quantitatively evaluated within a measurement area to be evaluated by means of stereological methods (software used: "Leica QWin"), whereby it is ensured that as homogeneous as possible of the part of the carrier substrate is present within the measurement area to be evaluated. Within the scope of the porosity measurement, the area fraction of the pores is determined relative to the total measuring area to be evaluated. This area proportion corresponds at the same time to the porosity in% by volume. Pores. The pores lying only partially within the measurement area to be evaluated are not taken into account in the measurement process. The following settings were used for the SEM image: Tilt angle: 0 °, acceleration voltage of 20 kV, working distance of approx. 10 mm and 250x magnification (device specification), resulting in a horizontal image edge of approx. 600 pm. Special emphasis was placed on a very good image sharpness.
    Further advantages and advantages of the invention will become apparent from the following description of embodiments with reference to the accompanying figures in which, for purposes of illustration of the present invention, the size ratios are not always given to scale.
    FIG. 1 shows a stack with two electrochemical modules according to the present invention. [0034] FIG
    Invention in cross section; 2a-2h: a connected to an interconnector electrochemical module ge according to the present invention in cross-section, each with different variants of the gas-tight zone; FIG. 3 shows a perspective view of a metallic carrier substrate with integrated gas passage openings; FIG. FIG. 4: SEM image of the edge region of a metallic carrier substrate in FIG
    Transverse section with superficially melted carrier substrate material; 5a-5b: SEM image of the surface of the edge region of a metallic
    Carrier substrate before (Figure 5a) and after (Figure 5b) the superficial melting; and Figs. 6a-6b: a photomicrograph of two inventive, electrochemical mixing modules in the region of the weld zone in transverse section, once with a lower (FIG. 6a) and once with a higher (FIG. 6b) penetration depth of the weld zone.
    Fig. 1 shows a schematic representation of a stack (2) with two electrochemical modules (4) according to the present invention, which are each connected to an interconnector (6). The electrochemical modules (4) each have a powder metallurgically produced, porous, plate-shaped, metallic carrier substrate (8) with a gas-permeable, central region (10) and an edge region (12) which is further compressed in relation to the central region and a first side (13 ) of the carrier substrate (8) mounted, metallic frame plate (14) which is connected in the overlap region of its inner frame portion (16) with the edge region (12) of the carrier substrate (8) via a peripheral welded joint (18). The edge region (12) has a lower porosity than the central region (10), but it is still designed to be gas-permeable. On a second side (20) of the carrier substrate (8), in each case the interconnector (6), which has a rib structure (22) in its central region, abuts in sections on the carrier substrate (8), the interconnector (6) and the frame plate (14) in each case abut each other peripherally with their edge regions and are connected to each other circumferentially by a welded joint (24). The viewing direction in FIG. 1 runs along the extension direction of the rib structure (22).
    The design of the layer structure and the gas-tight zone will be explained below with reference to Figure 2a, which schematically shows the interconnected to the interconnector (6), electrochemical module (4) according to the present invention in cross-section and with greater detail in the area of the layer structure and the gas-tight zone shows (in different size relation than in Fig. 1), but this time in the direction transverse to the extension direction of the rib structure (22) of the interconnector (6). For matching components, the same reference numerals as in Fig. 1 are used. In the central region (10), on a first side of the carrier substrate (8) there is a layer structure (26) which in the present case has an anode (28) arranged on the carrier substrate (8) and an electrolyte (30) arranged on the anode (28). is applied, wherein a typically between anode (28) and support substrate (8) provided diffusion barrier layer is not shown. A gas-tight zone (32) extending from the layer structure (26) to the frame plate (14) is formed by the gas-tight electrolyte (30) extending beyond the central region (10) and the anode (28) on the first Side (13) along the surface of the carrier substrate (8) extends into the overlap region with the frame plate (14) (in this case even up to an outer edge (34) of the carrier substrate (8)). Through the welded joint (18), a circumferential, gas-tight transition from the electrolyte (30) to the frame plate (14) is produced. A weld zone (36) of the weld extends from the first side (13) in the thickness direction (38) toward the opposite second side (20) only by a portion of the thickness of the carrier substrate (8). The thickness direction (38) is the direction perpendicular to the main extension plane of the plate-shaped carrier substrate (8). In Fig. 2a also shown in the frame plate (14) formed gas passage opening (40).
    Further embodiments of the present invention are explained below with reference to FIGS. 2b-2h, the representation being largely similar to that of FIG. 2a, except that the rib structure (22) of the interconnector (6) and the gas passage opening (40) are not shown. In the following, only the different variants of the design of the gas-tight zone will be discussed, wherein the same reference numerals are used for the same components and the structure is explained only insofar as there are differences from the figures 1a and 2a.
    In the exemplary embodiment of FIG. 2b, in addition on the first side (13) in the edge region (12) of the carrier substrate (8) there is a superficial, gas-tight section (41) of the carrier substrate (8) formed from the carrier substrate material Melting phase of the carrier substrate material, which extends to the outer edge (34) of the carrier substrate (8). This superficial gas-tight portion (41) was made by superficial melting of the carrier substrate material. Accordingly, two gas-tight layers, namely, the gas-tight electrolyte (30) and the superficial gas-tight portion (41) are stacked. In the embodiment of FIG. 2c, between the electrolyte (30) and the edge region (12) of the carrier substrate (8) there is provided a sealing layer (42) formed from a gas-tight sealant which also extends as far as the outer edge (34) of the carrier substrate (FIG. 8). As part of the production process, the sealant in the edge region (12) is applied to the first side (13) of the carrier substrate (8) before applying the electrolyte material (30). The gas-tight electrolyte (30) and the sealing layer (42) form two superimposed gas-tight layers. A further modification with respect to FIG. 2 a is that a cathode (44) is already provided above the electrolyte (30) in the electrochemical module of FIG. 2 c, wherein a diffusion barrier layer typically provided between electrolyte (30) and cathode (44) does not exist is shown. In contrast to FIG. 2 d, in FIG. 2 d the welding zone (36 ') of the welded connection (18') is circumferentially formed on the inner edge (46) of the frame plate (14) and extends in the thickness direction (38) only through a part of the Thickness of the frame plate (14) (and correspondingly only by a part of the thickness of the carrier substrate (8)). In Fig. 2e, in contrast to Fig. 2b, the welding zone (36 ") of the welded joint (18") circumferentially formed on the outer edge (34) of the support substrate (8) and extends in the thickness direction (38) only by a part of Thickness of the frame plate (14) (and correspondingly only by a part of the thickness of the carrier substrate (8)). In a modification to FIG. 2b, the electrolyte (30 "') in FIG. 2f likewise extends beyond the central area (10) and the anode (28) on the first side (13) along the surface of the carrier substrate (8). However, it ends before reaching the inner edge (46) of the frame plate (14) and in front of the welded joint (18). In addition, a superficial, gas-tight portion (41) corresponding to that shown in Fig. 2b is provided. Accordingly, only in sections two superimposed, gas-tight layers are provided. In Fig. 2g, the same modification as was explained with reference to Fig. 2f, is provided, but as a modification with respect to Fig. 2d. In Fig. 2h, the same modification as explained with reference to Fig. 2f is provided, but as a modification with respect to Fig. 2e. As is made clear with reference to FIGS. 2a to 2h, there are further possible combinations of the parameters number and structure of the layer stack, formation of the electrolyte, formation of a superficial, gas-tight section, formation of a sealing layer and formation and placement of the weld zone. In particular, e.g. one to three gas-tight layers (electrolyte, sealing layer, superficial, gas-tight section) may be provided which completely or even partially overlap.
    In Fig. 3 is another variant of a powder metallurgically produced, porous, plate-shaped, metallic carrier substrate (48) having a gas-permeable, central region (50) on which a layer stack can be applied, and with respect to the central region further densified edge region (52). The edge region (52) has a lower porosity than the central region (50), but it is still gas-permeable. In the edge area (52), gas passage openings (54), each extending through the edge area (52), are respectively provided along two, mutually opposite sides. On the first, i. A superficial, formed from the carrier substrate material, gas-tight portion (58) of the carrier substrate (48), which has a melt phase of the carrier substrate material is formed, which extends to the outer edge (60) of the carrier substrate to the applied layer stack side (56) (48) extends. This superficial gas-tight portion (58) was made by superficial melting of the carrier substrate material. The cylindrical walls (62) of the gas passage openings (54) are gas-tight, which can be achieved for example by introducing the same by means of laser cutting. The walls (62) adjoin the surface, gas-tight portion (58) in a gastight manner.
    An e.g. The superficial, gas-tight section (58) produced by laser processing can be distinguished from the underlying, porous section (64) on the basis of the microstructure (in this case: melt phase) and on the basis of the porosity difference, as can be seen from the SEM micrograph of FIG. It can be seen from the SEM images of FIGS. 5a and 5b from the surface of a powder-metallurgically produced and pre-compressed edge region (FIG. 5a) and after (FIG. 5b) of the laser processing to produce the superficial, gas-tight section that the surface roughness is considerably reduced , which also leads to improved adhesion properties of the electrolyte or a sealing layer. In FIGS. 6a and 6b, the section of the welded connection between a frame plate (66) and a porous, powder-metallurgical carrier substrate (68) is shown in transverse section. The welding zone (70) of the welded joint extends once to a depth t of approximately 20% (FIG. 6a) and once to a depth t of approximately 70% (FIG. 6b) of the thickness d of the carrier substrate (68). in the area concerned (with a fluctuation range of approximately ± 5%). The weld parameters for the weld of Figure 6a were P = 550W, zf = 0mm, 0Fiber = 4OOpm, 0Spot = 4OOpm, vs = 4m / min (min: minute), those for Figure 6b were P = 600W, zf = 0mm , 0Faser = 4OOpm, 0Spot = 4OOpm, vs = 4m / min, where P is the laser power, z f is the focus position, 0Faser is the fiber diameter, 0Spot is the spot diameter and vs is the jet velocity.
    Production Example: E in a carrier substrate was prepared from corresponding starting powders having a total composition and particle size, as specified above in connection with AT 008 975 U1, by powder metallurgy (ie comprising the steps of pressing the starting powder and sintering ) produced. The carrier substrate then had a thickness of 0.8 mm and a porosity of about 45% by volume. After the sintering process and the cutting to the desired format, the substrate is compressed by means of a uniaxial press with up to 1500 t pressing force in the peripheral edge region. This compacted edge area has a residual porosity of 8% by volume after this process step. Following the compression, this edge region on the first side is superficially melted with the aid of a disk laser and a coordinated 3D laser optics. As a parameter for this processing step, a laser power of 150W at a jet speed of 400 mm / s was used at a spot diameter of 150pm. The surface to be machined (in the present case: the entire surface of the edge area on the first side) is meandered, so that it is processed over its entire surface. It then takes place the application of a diffusion barrier layer consisting of cerium-gadolinium oxide by means of a PVD process, such as magnetron sputtering. After this treatment step, the anode, which is necessary for the electrochemically active cell (in fuel cell operation), is applied from a composite composed of nickel and zirconium dioxide fully stabilized with yttrium oxide by screen printing. The multi-layered graded anode ends on the superficially molten edge region of the carrier substrate, so that an overlap region is formed. By a sintering step under reducing atmosphere and T> 1000 ° C, the anode is sintered. Subsequently, the electrolyte layer of yttria fully stabilized zirconia is applied over the entire surface via a PVD process (gas flow sputtering). In addition, a diffusion barrier (cerium-gadolinium oxide) is necessary for the use of mixed-conducting electrode materials such as LSCF ((La, Sr) (Co, Fe) 03). This can also be applied very thinly via a PVD process (e.g., magnetron sputtering). After measuring the specific leak rate by the differential pressure method, the electrode material LSCF ((La, Sr) (Co, Fe) 03) is applied. This usually also happens via a screen printing step. The necessary sintering of the cathode layer takes place in situ when the electrochemical cell is put into operation. The electrochemical cell is then ready for integration into a frame plate. In this case, the coated carrier substrate is positioned by means of a device. On this support substrate, the frame plate with a corresponding section is now as possible gap-free on the (first) side, on which the layer stack is arranged, stretched. The circumferential weld is also realized with the help of 3D scanner optics and a disk laser. Depending on the carrier substrate and frame sheet thickness, the laser power must be adjusted accordingly. With the set parameters laser power 600W, spot diameter 400pm and jet speed 4000mm / min the electrochemical cell can be integrated according to this application.
    权利要求:
    Claims (15)
    [1]
    Claims 1. An electrochemical module (4) comprising: a porous plate-shaped metallic carrier substrate (8; 48; 68) comprising a gas-permeable central region (10; 50) and an edge region (12; 52) surrounding the central region in the central region on a first side (13; 56) of the carrier substrate arranged layer structure (26) having at least one electrochemically active layer (28, 30, 44; 30 '"), at least one metallic, gas-tight housing part (14; which is connected to the edge region of the carrier substrate via a welded connection (18; 18 '; 18 ") and a gas-tight zone (32) extending from the layer structure to the gastight housing part, characterized in that the gas-tight zone has a gas-tight surface section (30; 30 '"; 41; 42) extending from the layer structure superficially on the first side of the carrier substrate at least to the weld joint, and the weld connection, by which the gas-tight surface portion with the housing part is gas-tightly connected and whose welding zone (36; 36 '; 36 "; 70) extends from the first side in the thickness direction (38) to an opposite, second side (20) of the carrier substrate only by a portion of the thickness of the carrier substrate.
    [2]
    2. An electrochemical module according to claim 1, characterized in that the carrier substrate (8; 48; 68) below the gas-tight surface portion (30; 30 '"; 41; 42) and below the welding zone (36; 36'; 36"; 70 ) of the welded joint (18; 18 '; 18 ") is porous.
    [3]
    3. An electrochemical module according to claim 2, characterized in that the carrier substrate (8; 48; 68) in the porous portion (64) of the edge region (12; 52) has a porosity which is greater than the porosity of the central region (10; ) is reduced.
    [4]
    4. Electrochemical module according to one of the preceding claims, characterized in that the carrier substrate (8; 48; 68) is made of a Cr (chromium) and / or Fe (iron) based material combination powder metallurgy in one piece.
    [5]
    The electrochemical module according to any one of claims 2 to 4, characterized in that the carrier substrate (8; 48; 68) in the porous portion (64) of the peripheral region (12; 52) has a porosity in the range of 3% to and including 20%.
    [6]
    Electrochemical module according to one of the preceding claims, characterized in that the welding zone (36; 36 '; 36 "; 70) extends from the first side (13; 56) in the thickness direction (38) to the second side (20) to to a depth t of 20% < t < 80% of the thickness d, the carrier substrate (8; 48; 68) in the edge region (12; 52) extends.
    [7]
    7. Electrochemical module according to one of the preceding claims, characterized in that the housing section (16) of the housing part (14; 66) connected to the welded connection (18; 18 '; 18 ") overlaps the edge region (12; 52) of the carrier substrate (8; 48; 68) and on the first side (13; 56) of the carrier substrate.
    [8]
    Electrochemical module according to one of the preceding claims, characterized in that the welding zone (36; 70) in the thickness direction (38) extends completely through the housing part (14; 66) and only partially into the carrier substrate (8; 48; 68) extends into it.
    [9]
    9. Electrochemical module according to one of claims 1 to 7, characterized in that the welding zone (36 ', 36 ") on the edge (34) of the carrier substrate (8) and / or on the edge (46) of the housing part (14). is formed and extends in the thickness direction (38) only by a part of the thickness of the housing part.
    [10]
    10. Electrochemical module according to one of the preceding claims, characterized in that the housing part (14) is frame-shaped and extends circumferentially around the edge region (12) of the carrier substrate (8).
    [11]
    11. An electrochemical module according to one of the preceding claims, characterized in that the housing part (14) is provided with gas passage openings (40) frame plate, wherein the frame plate is connected in the region of its outer edge (60) with an interconnector.
    [12]
    12. An electrochemical module according to one of the preceding claims, characterized in that the gas-tight surface portion has an electrolyte (30; 30 '") which is part of the layer structure (26) and extends beyond the layer structure on the first side (13) of the Carrier substrate (8) extends.
    [13]
    13. An electrochemical module according to one of the preceding claims, characterized in that the gas-tight surface portion has a superficial, formed from the carrier substrate material, gas-tight portion (41) of the carrier substrate (8), which has a melt phase of the carrier substrate material.
    [14]
    14. An electrochemical module according to one of the preceding claims, characterized in that the gas-tight surface portion has a on the carrier substrate (8) applied, gas-tight sealant (42).
    [15]
    A method of making an electrochemical module (4), characterized by the steps of: A) powder metallurgically producing a porous, plate-shaped metallic carrier substrate (8; 48; 68) which is at least in a central region (10; an edge region (12, 52) is surrounded, is gas-permeable formed; B) gas-tight bonding of a layer structure (26) to at least one metallic, gas-tight housing part (14; 66) on a first side (13; 56) of the carrier substrate by forming the layer structure with at least one electrochemically active layer (28, 30, 44; 30 ') Is applied in the central region on the first side of the carrier substrate by the at least one metallic gas-tight housing part with the edge region of the carrier substrate via a welded joint (18, 18', 18 ") is connected such that the weld zone ( Extending from the first side in the thickness direction (38) to an opposite, second side (20) of the carrier substrate only by a portion of the thickness of the carrier substrate, and by forming a gas tight surface portion (30, 30) 41, 42) extending from the layer structure superficially on the first side of the carrier substrate to the welded joint is formed. 4 sheets of drawings
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    同族专利:
    公开号 | 公开日
    CN107925110B|2020-12-25|
    EP3323168B1|2020-04-29|
    KR20180030040A|2018-03-21|
    TW201709601A|2017-03-01|
    WO2017008093A1|2017-01-19|
    TWI712209B|2020-12-01|
    US20190013527A1|2019-01-10|
    JP2018528575A|2018-09-27|
    CA3005352A1|2017-01-19|
    EP3323168A1|2018-05-23|
    AT14455U3|2017-05-15|
    DK3323168T3|2020-08-03|
    CN107925110A|2018-04-17|
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    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    ATGM209/2015U|AT14455U3|2015-07-14|2015-07-14|Electrochemical module|ATGM209/2015U| AT14455U3|2015-07-14|2015-07-14|Electrochemical module|
    KR1020187001104A| KR20180030040A|2015-07-14|2016-06-29|Electrochemical module|
    JP2018501248A| JP2018528575A|2015-07-14|2016-06-29|Electrochemical module|
    CN201680041150.4A| CN107925110B|2015-07-14|2016-06-29|Electrochemical module|
    EP16745404.0A| EP3323168B1|2015-07-14|2016-06-29|Electrochemical module|
    CA3005352A| CA3005352A1|2015-07-14|2016-06-29|Electro-chemical module|
    PCT/AT2016/000073| WO2017008093A1|2015-07-14|2016-06-29|Electrochemical module|
    US15/745,184| US20190013527A1|2015-07-14|2016-06-29|Electro-chemical module|
    DK16745404.0T| DK3323168T3|2015-07-14|2016-06-29|ELECTROCHEMICAL MODULE|
    TW105122052A| TWI712209B|2015-07-14|2016-07-13|Electro-chemical module|
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