专利摘要:
The invention relates to an LED module (1), LED module (1), comprising: a carrier (3), wherein on the carrier (3) a metallic layer (4) is applied, at least one LED chip (2) , and a dam (8), wherein the metallic layer (4) partially covers the subjacent surface (17) of the carrier (3, 31). Furthermore, the invention relates to a method for producing such an LED module (2) and a spotlight or a retrofit LED lamp comprising at least one LED module (1) according to the invention.
公开号:AT14124U1
申请号:TGM186/2012U
申请日:2012-04-27
公开日:2015-04-15
发明作者:Florian Wimmer;Norbert Reitinger
申请人:Tridonic Jennersdorf Gmbh;
IPC主号:
专利说明:

Description: The present invention relates to an LED module with a carrier and at least one LED chip and to a method for the production thereof.
LED modules of the type mentioned are known from the prior art. For example, US 2011/0248287 A1 shows an LED module with a highly reflective carrier. For this purpose, the carrier is provided with a reflective layer or coating in areas where no LED chips are present. Since the reflective layer does not reflect all the light, the efficiency of the module is reduced.
Furthermore, US 2011/0001148 A1 shows an LED module with several layers, wherein LED chips are placed by means of a thermally conductive adhesive on an electrically insulating layer, which in turn is provided on a support. The LED chips are electrically contacted and then provided with a layer of a highly reflective Materi¬al. Above this, a litter layer and a phosphor layer are applied. Disadvantages here are, on the one hand, the reflectance of the reflective layer and, on the other hand, the complex structure of the module.
It is thus an object of the invention to provide a simple LED module which allows a high reflectance of the carrier while exhibiting improved heat dissipation.
These objects are achieved by the features of the independent claims. The dependent claims further form the central idea of the invention in a particularly advantageous manner.
According to a first aspect of the invention, an LED module is proposed which comprises a carrier, for example. a printed circuit board wherein a metallic layer is deposited on the substrate. Furthermore, the LED module has at least one LED chip as well as a lacquer layer made of a ceramic lacquer and at least partially covering the metallic layer, which is applied to the support. The LED chip (or SMD LED) can be fastened, for example, on the printed circuit board or the metallic layer (or the lacquer layer) in accordance with a chip onboard (COB) technology. The use of surface-mounted device (SMD) technology is alternatively conceivable.
According to the light passing through the lacquer layer of the LED chip can be reflected back due to the underlying metallic layer. This double-reflective embodiment has the advantage that, for example, in the case of an oxidative blackening of the silver layer, a significant proportion of the light is still reflected by the overlying lacquer layer, which increases the efficiency of the module. At the same time, the thermal conductivity of the module is improved by the use of the metal layer according to the invention.
Preferably, the LED chip is applied to the metallic layer. The lacquer layer is then applied in areas on the metallic layer outside the LED chip. As a result, the lacquer layer has gaps in which the LED chips can be inserted and applied to the metallic layer.
The LED chip may be glued to the metallic layer by means of an adhesive. The adhesive may, for example, be a transparent translucent adhesive or a reflective, that is, in particular white, adhesive. Preferably, the Kelber at least partially or completely fills a gap between the side wall of the LED chip and an edge boundary of the ceramic lacquer layer facing the LED chip, so that the silver layer is completely covered in the last-mentioned case. If the adhesive is of a light-reflecting material, then the entire support surface can be formed with a double-reflective design.
The distance between the side wall of the LED chip and the lacquer layer is preferably in a range between 50 and 500 .mu.m, particularly preferably between 100 and 300 .mu.m.
The lacquer layer may have an average thickness of 10 to 100μιη, preferably an average thickness of 20 to 50pm.
The metallic layer may have a thickness of 30 to 8000 nm, preferably a thickness of 100 to 300 nm or 2000 to 6000 nm. In the case of a silver layer, it preferably has a thickness of 3,000 to 5,000 nm. In the case of a gold layer, it preferably has a thickness of 30 to 100 nm.
The LED module may further comprise a LED chip or a plurality of LED chips laterally surrounding and the LED chips preferably superior in height dam, which is at least partially auf¬bracht on the metallic layer and / or the lacquer layer ,
Preferably, the LED module further comprises a central filling of a matrix material. The matrix material may be a transparent and preferably liquid and temperature-curable polymer; e.g. Silicone. The central filling preferably completely fills the space surrounding the dam. Particularly preferably, the upper side of the LED chip is covered or coated.
The central filling can thus fill the entire volume limited by the dam, so that the top of the filling lies on the same level as the maximum height of the dam. Preferably, the dam is higher than the LED chip, so that then the Obersei¬te of the LED chip is coated or covered by the filling and protected.
The central filling may comprise color conversion particles / phosphor particles which change light emitted by an LED chip into light of a second, lower frequency spectrum. Alternatively or additionally, the central filling may comprise scattering particles which scatter light emitted from an LED chip thereby enabling a more homogeneous emission.
The material of the dam and the material of the central filling may be of the same material class, preferably silicone-based, more preferably the dam and the central filling are made of a polymer or resin having the same structure, thereby making it possible is to apply the dam and the filling both in a curing step. Particularly preferably, the material or the polymer of the dam and the central filling have a similar chemical structure which preferably allows cross-linking between the materials. They can also be polymerized by the same reaction and differ only by the resulting Shore hardness, e.g. For the dam a ShoreA hardness of 70 and for the filling a ShoreA hardness of 35. They can also be made of an identical material, which, for example, only by the fillers used to reach a different functional expression.
As described above, the dam may also be made of a resin or a polymer. Different base resins can be used for the dam. Preferred materials are silicones, due to their high UV stability. The material of the dam may contain fillers in the form of particulate material such as e.g. fumed silica (silicon dioxide; SiO 2), wherein particulate material or finely granulated material can be used to determine the desired rheological properties of the uncured polymer. The dam material is preferably non-transparent (or highly reflective) for the wavelength of light passing through the central filling within the dam. A transparent or translucent embossment of the dam is conceivable according to an alternative embodiment of the invention.
At least the inner wall of the dam can be light-reflecting / scattering. Most preferably, the dam has light scattering particles, such as white pigments (e.g., SiQ 2, TiQ 2, BaTiO 3, SnO, ZrQ 2). These reflective / scattering particles are preferably continuous throughout the mass of the dam. As a result, the dam has the role of a reflector applied in a liquid state to a (conductor) plate. The dam may contain 10 to 60 weight percent, more preferably 20 to 40 weight percent of the reflective particles.
The dam may be a prefabricated element, preferably of a polymer (e.g., filled polymer / resin), ceramic, metal or other (preferably filled) plastic.
The dam may have a height of 0.1mm to 3mm, preferably 0.25mm to 2mm, more preferably 0.5 to 1mm.
The diameter of the cross-sectional area of the dam, ie the average thickness of the dam or the maximum distance between the inner wall and the outer wall of the dam, can be selected according to the requirements of the final element. Preferably, the thickness substantially corresponds to the height of the dam , With a total diameter of the dam of about 5mm, its thickness may be equal to or less than 0.5mm. For larger diameters, the thickness is correspondingly tuned to more than 0.5 mm, with smaller diameters, the thickness may also be less than 0.5 mm.
The cross-sectional shape of the dam is not limited by the invention.
The dam can in plan view, so perpendicular to the support or the printed circuit board seen, a circular, ellipsoidal, oval, or polygonal or polygonal shape, for example a rectangular or square or octagonal shape, have.
The invention further relates to a spotlight, a downlight or a retrofit LED lamp, which have at least one LED module according to the invention.
The invention also relates to a method for producing an LED module. First of all, a metallic layer, preferably a silver layer or a gold layer, is applied to a carrier, in particular a printed circuit board. The layer thickness can be increased thereby by carrying out several coating steps or coating processes one after the other.
The reflective metal layer, in particular a silver surface, can additionally be protected from oxidation by coating with titanium oxide, aluminum oxide or glass. In this case, the white paint primarily serves to optimize the light output.
Thereafter, a ceramic lacquer on the support - more precisely, the metallic layer of the carrier - applied so that it (r) of a lacquer layer at least partially, preferably completely covered. If the metallic layer is only partially covered, ie partially covered, the lacquer layer consequently has cut-offs everywhere there is no lacquer. Preferably, the lacquer layer is printed, for example by screen printing.
Subsequently (or also before, during or after one of the aforementioned steps), at least one LED chip is placed on the carrier, the metallic layer or the lacquer layer.
If there are cut-outs, the LED chip is preferably glued to the metallic layer in the cut-outs of the lacquer layer. This is preferably done by means of a reflective, particularly preferably white adhesive. The dosage of the adhesive is vorzugswei¬se selected such that when placing the LED chip on the adhesive in the exemptions of the adhesive is displaced laterally so that he the remaining gap between the side wall of the LED chip and the LED chip facing edge of the Kerami¬schen lacquer layer at least partially or completely, so that the metallic layer is completely covered in the latter case.
It is also possible to apply a dam at least partially on the metallic layer and / or the lacquer layer in such a way that the dam surrounds the at least one LED chip laterally. After that, the surrounding of the dam
Space filled with a filling material to form a central filling. The resulting center filling is preferably provided so as to coat the top of the LED chip.
The dam and the central filling are preferably made of a liquid polymer or liquid polymer mixture which is cured after application. The hardening of the dam and the hardening of the central filling can be carried out after the respective steps for the application of the dam and the central filling. It is alternatively also possible and particularly preferred to carry out the hardening of the two parts in a single step after the provision of the dam and the central filling. In this case, a chemically and / or physically connected interface between the dam and the central filling can be produced. If the same Basispoly¬mer is used, no interface can arise in the true sense.
Further aspects, advantages and objects of the present invention will become apparent from the following detailed description of an embodiment of the present invention when taken in conjunction with the accompanying drawings.
FIG. 1A shows a sectional view of an LED module according to the first embodiment of the invention, [0035] FIG. 1B shows a sectional view of an LED module according to the second embodiment of the invention, FIG. 1C shows a sectional view FIG. 2A-C shows the overviews of the LED modules according to the invention, FIG. 3 shows a partial sectional view of a retrofit LED lamp with an LED module. [0038] FIG according to the invention, and [0039] FIG. 4 shows a sectional view of an LED module according to a further embodiment of the invention.
FIG. 1A shows an LED module 1 (hereinafter also referred to as a module) according to an embodiment of the invention. The module 1 has at least one light-emitting diode (LED die or LED chip) 2. The number of LED chips 2 is not limited by the invention. The LED chip 2 preferably has a height of 50 to 500 pm, preferably 100 to 200 pm.
The LED chips 2 are applied to the carrier 3. Amber, red, green, and / or blue LED chips (for example RGB) or blue and red LEDs for generating monochromatic, white or differently colored, mixed light can be used as LED chips 2. Further, the LED chip 2 may have a photoluminescent material disposed over the LED chip 2, such as inorganic phosphor (s) (for example, garnets: YAG: Ce3 +, LuAG: Ce3 +, orthosilicates (BOSE): (Ca, Sr, Ba) 2SiO4 : Eu2 +, (Ca, Sr) 2Si04: Eu2 +, (Sr, Ba) 2Si04: Eu2 +, (Ca, Ba) 2Si04: Eu2 +; Nitrides: CaAISiN3: Eu2 +, (Sr, Ca) AISiN3: Eu2 +, CaAISiON3: Eu2 +, ß -SiAION: Eu2 +)) and / or organic phosphor (s) to be provided, by means of which the / emitted by the LED chip 2 light and the light converted in the photoluminescent material light are mixed together such that any desired color or white E. Light (for example by means of blue LED and yellow (and / or green and / or red) phosphor) can be generated. Any combination of the aforementioned LED chips 2 in the LED module 1 is also conceivable.
The module 1 preferably consists of a carrier 3 and a preferably structured metallic layer 4. The carrier 3 is preferably a printed circuit board, wherein the carrier 3 is made of a metal core, preferably of an aluminum plate, and an electrically insulating dielectric and consists of structured copper conductors. On the support 3, the metallic layer 4 is applied; Preferably, the carrier 3 is coated with the metallic layer 4. The metallic layer 4 is preferably a silver layer, a gold layer, an ENIG (Electroless Nickel / Immersion Gold), an ENEPIG (Electroless Nickel / Electroless Palladium / Immersion Gold) or an ENEC / OSP (Electroless Ni / Electroless Cu / OSP (Organic Surface Protection)). ) and preferably covers the entire support surface. The metallic layer 4 may consist of a bondable or at least partially bondable surface, which may additionally be protected against alteration in the non-bondable surface regions by oxide or organic layer (s).
The layer 4 preferably has a thickness of 3 0 to 8000 nm, particularly preferably a thickness of 100 to 300 nm or 2000 to 6000 nm. This upper limit is partly technical, but also due to the costs for the silver or gold material as a compromise. According to the invention, therefore, stronger / thicker coatings are also conceivable.
A lacquer layer 5 may be provided, for example, of a highly reflective white paste leather, so that it at least substantially covers the metallic layer 4. For this purpose, the lacquer layer 5 is applied to the carrier 3, more precisely to the metallic layer 4 of the carrier 3; preferably by means of a dispensing method or a Sieb¬druckverfahrens. The lacquer layer 5 in this embodiment preferably has a Stärkebzw. average thickness of 5 to 250pm, more preferably 20 to 200pm, most preferably 100 to 150pm.
The lacquer layer 5 can be realized as a (high) reflective ceramic white layer or as a white (high) reflective coating. The lacquer layer 5 is preferably a white coating, preferably containing pigments of titanium dioxide (a polymorph of TiO 2, e.g., TiO 2 (B)), alumina (Al 2 O 3), zirconia (ZrO 2), barium titanate (BaTiO 3), silica (SiO 2), or potassium octanoate (K 2 Ti807). The pigments preferably consist of a mixture of TiO 2 and / or TiO 2 (B) and / or K 2 Ti 80 17 and / or SiO 2. The dispersion further preferably contains an organic (e.g., ether (s), Branched polymeric siloxane (s), preferably methyl and / or hydroxy-terminated silsesquioxanes) and / or an inorganic solvent, for example. Water. The use of a mixture of organic and anorgani¬schen solvents is also feasible.
In a preferred embodiment, the at least one LED chip 2 is applied directly to the metallic layer 4 (optionally with the protective coating described above) and electrically contacted (for example in a recess of a (FR4) printed circuit board). The LED chip 2 can be fixed in accordance with a chip-on-board (COB) technology. However, the LED chip 2 can also be applied to the carrier 3 or the lacquer layer 5 (as in FIGS. 1B, 1C). If the LED chip 2 is applied to the metallic layer 4, then the lacquer layer 5 is applied only in areas on the metallic layer 4 outside the LED chip 2. The lacquer layer 5 is then preferably applied to the metallic layer 4 before the LED chips 2 are applied to the metallic layer 4. As will be described in Weite¬ren still, the lacquer layer 5 is provided for this purpose so that crops remain 6. In these cut-outs 6, the LED chip 2 is applied to the metallic layer 4.
The distance between the side wall 20 of the LED chip 2 and the lacquer layer 5 (ie a boundary 50 of the lacquer layer 5, which is defined by the recess 6) is preferably in a range between 50 and 500pm, more preferably between 100 to 300pm.
The LED chip 2 is preferably adhered to the metallic layer 4 by means of an adhesive (not shown). The adhesive may be a reflective, preferably white adhesive. In a preferred embodiment, the adhesive at least partially or completely fills a gap 7 between the side wall 20 of the LED chip 2 and an edge boundary 50 of the ceramic coating layer 5 facing the LED chip 2, so that the metallic layer 4 in the latter case is completely filled by the Lacquer layer 5, the LED chips 2 and the adhesive is covered. In another preferred application, the adhesive is transparent.
The module 1 may further comprise a side of the LED chip 2 and the plurality of LED chips 2 surrounding dam 8, which is at least partially applied to the metallic layer 4und / or the lacquer layer 5. The dam 8 is preferably provided spaced from the LED chip 2 laterally.
Preferably, a central filling 9 fills the space 80 surrounding the dam 8. Preferably, the central filling 9 fills the entire volume bounded by the dam 8; the interior 80 formed by the dam 8 is thus preferably filled to the highest extent of the dam 8 with the filling 9. If, according to a preferred embodiment, the dam 8 is higher than the LED chip 2 and consequently projects above it in height, the upper side 21 of the LED chip 2 may be covered with the filling material; at least when the volume bounded by the dam 8 is completely filled with the central filling 9. Preferably, the height of the dam 8 is at least two or three times as high as the height of the LED chip 2. The dam 8 preferably has a height of 0.1 to 3 mm, particularly preferably 0.25 to 2 mm, most preferably 0, 5 to 1mm. The diameter of the cross-sectional area of the dam 8, ie the average thickness of the dam 8 or the maximum distance between the inner wall and the outer wall of the dam 8, corresponds essentially to the height of the dam 8.
The central filling 9 is preferably made of a matrix material, more preferably of a transparent, preferably liquid and temperature-hardenable polymer or resin or a polymer mixture. The central filling 9 preferably has color conversion particles and / or scattering particles 90.
In a particularly preferred embodiment, the material of the dam 8 and the material of the central filling 9 of the same class of material, preferably silicone-based. For example, the dam 8 and central filling 9 may be made of a polymer having the same structure. This makes it possible to apply the dam 8 and the filling 9 both in a curing step, as will be described below.
The rheological characteristics of the liquid polymer material for building the wall of the dam 8 must be selected such that the uncured polymer or resin is dimensionally stable after release until cured. By appropriate admixture of suitable fillers this approximately solid state can be achieved.
To control the rheological characteristics of the liquid polymer or resin material, fumed silica (silica, SiO 2) or other particulate matter (finely granulated materials) may be added as fillers to the liquid polymer or resin. The dam material is preferably reflective to the wavelength of the light passing through the central filling 9 within the dam 8.
If a higher reflectivity of the wall of the dam 8 is desired, for example, at least the inner wall of the dam can be metal coated or the dam made of metal. However, in this embodiment, insulation problems may occur.
More preferably, the dam 8 comprises alternatively or additionally (highly) reflecting and / or effectively scattering particles with low absorption, such as white pigments. For this purpose, the reflective materials can be added to the liquid polymer or resin. Such pigments are, for example, prepared from TiO 2, BaTiO 3, BaS 4 and / or ZrO 2. These reflective particles are preferably continuous throughout the mass of the dam 8. The dam 8 may contain from 10 to 60 percent by weight of the reflective particles. Thereby the entire material of the dam 8 will have a non-transparent and preferably white appearance. The reflection of light from the LED chip 2 occurs at the inner surface of the dam 8, whereby light is reflected back into the interior of the dam 8 and away from the LED chip 2. As a result, the dam 8 has the role of a reflector applied in a liquid state on the carrier 3 or the metallic layer 4 or the lacquer layer 5.
The dam 8 can be applied by means of dispensing techniques, as further described below. However, it is also possible that the dam 8 is a prefabricated element, preferably of a polymer, ceramic, metal or other plastic. This element can then, for example, be glued in place.
The dam 8 preferably has the cross-sectional shape of a semicircle, a circle, a rectangle or a square or a polygon. In the plan view, thus seen perpendicular to the carrier 3, the dam 8 has a circular, oval, ellipsoidal or angular shape, for example a rectangular or square or polygonal shape. It should be noted that the term "dam " There is no limitation on the shape as long as the dam 8 can serve as a dam 8 surrounding the inner central packing 9, and the dam 8 made of a polymer or resin material is stable even in the uncured state.
Fig. 1B illustrates a further embodiment of the invention. In comparison to the solution in Fig. 1A, the metal layer 4 only partially covers the carrier 3, preferably the areas under the LED chips 2 and the bond pads 11 (not shown) with the metal layer 4 coated. The lacquer layer 5 covers the metal layer 4 below the LED chips 2, but not the metal layer 4 applied on the bond pads 11. The lacquer layer 5 extends to the carrier Surface 17 under the dam 8. The lacquer layer 5 preferably completely covers the surface of the support 3 below the dam 8. The lacquer layer may, however, be incompletely applied to the support area below the dam 8.
The lacquer layer 5 in this embodiment preferably has a thickness or average thickness of 10 to 100 μm, particularly preferably 20 to 50 μm. In this embodiment, the LED chips 2 lie directly on the lacquer layer 5. The LED chips 2 are connected to each other with bonding wires 12 and to the bond pads 11 electronically. The ribbon wires 12 are partially mechanically protected by the dam 8 because they are partially under the dam 8.
For example, the carrier 3 with layer 4, in addition to the examples mentioned, can also be constructed as shown in FIG. 1C, the structure described in the following, taken alone, ie without the further features described in the context of the application, in FIG the same or other areas of printed circuit board technology can be used as an advantageous (highly) reflective circuit board. First of all, a base material or base substrate 13 (for example aluminum plate or gold plate) is provided, which has, for example, a thickness of 0.5 to 5 mm, preferably 1 to 1.5 mm. At least one layer of high-purity aluminum (99.99%) is applied to the base substrate 13, preferably vapor-deposited. This layer preferably has a thickness of 30 to 8000 nm. This pure aluminum layer can preferably again be provided in the previously described manner with at least one layer of oxides, which is likewise preferably vapor-deposited.
In the aforementioned structure, a printed circuit board 31, preferably a FR4 printed circuit board is applied, pressed or laminated more precisely. Base substrate 13 and circuit board 31 form carrier 3 in the embodiments shown in FIGS. 1B-1C and FIG. 4.
Alternatively, the printed circuit board 31 and the base substrate 13 can be connected by means of an additional substrate 16, for example by gluing or soldering processes (See FIG. 4).
Preferably, the electrically insulating base or carrier material (i.d.R., epoxy resin impregnated glass fiber mats) of the printed circuit board 31 has a thickness of 30 to 300 pm, particularly preferably 100 pm. The copper layer (conductor tracks) applied to the carrier material of the (FR4) circuit board 31 preferably has a thickness of 18 to 140 μm, particularly preferably 60 to 90 μm. The finishing surface / metal layer 4 consists of nickel and / or palladium and / or gold (as previously mentioned, for example, ENIG, ENEPIG or ENEC / OSP). The metal layer 4 is preferably applied to the surface of the (FR4) circuit board 31 (of the carrier 3). applied under the Dam 8. The solder mask is preferably white.
The circuit board 31 further preferably has at least one recess 14 (e.g., drilling, milling, etc.) in a region where the LED chip (s) 2 is provided. These recess (s) 14 release the underlying aluminum layer or coated aluminum plate (or gold layer) and constitute a reflecting surface on the (coated) base substrate 13. In the region of the recess (s) 14, the LED chip 2bzw. For example, the LED chips 2 can be applied directly to the base substrate 13 (optionally with the protective coating of oxides described above) in the manner described below. With such a structure alone, a carrier 3 or a printed circuit board can be provided, which allows a high degree of robustness (and thus a certain indestructibility) of the construction. At the same time, the problems arising from the use of silver, including comparatively high costs of silver, are avoided ,
A lacquer layer 5 made of a ceramic lacquer or a ceramic highly reflective white paste can, according to a further embodiment, be provided in such a way that it at least partially covers the base substrate 13. For this purpose, the lacquer layer 5 may be applied to the base substrate 13; preferably by means of a screen printing process. For this purpose, the lacquer layer 5 may, for example, also be provided in the region of a possible recess 14 in a (FR4) printed circuit board and possibly also cover the base substrate 13 and / or the (FR4) printed circuit board 31 (for example, outside of a recess 14 in FIG FR4 printed circuit board exposed areas of the coated base substrate). The lacquer layer 5 preferably has a thickness or average thickness of 10 to 100 μm, particularly preferably 20 to 50 μm.
Alternatively, a reflector 15 on the circuit board 31 outside of the dam auf¬ brought (see Fig. 4).
According to the invention, mid- and / or low-power (0.05-0.6 W) LED chips 2 can be mounted within the dam 8 (in the space 80 surrounding the dam) (eg See Figures 2A-C). Application of high-power LED chips 2 is also conceivable based on the described examples. The LED chips 2 are preferably connected in series (structured in strands 32) (see FIGS. 2A-C). A strand 32 preferably contains from 5 to 20 LED chips 2, more preferably 10-14 LED chips 2, more preferably 12 LED chips 2. The LED chips 2 are preferably in 1-15 strands, more preferably in 6-12 Strands on the LED module 1 set to the shortest electrical connections between LED chips 2 and the bond pads 11.The LED module 1 is preferably with from 40 to 160 LED chips 2, more preferably from 70 to 150 LED Chips 2, for example, according to the representations Fig. 2A-C evenly and with low decency equipped to each other to achieve the most homogeneous light distribution.
Alternatively, according to another embodiment of the invention, the LED module 1 may include 10-50 LED chips 2 arranged in 1-4 strands.
The surface 18 occupied by the LED chips (eg, see Fig. 2B) is, for example, from 60% to 90%, preferably 64-75% of the total surface of the space 80.
The mentioned solutions have the advantage that when using the LED module 1 with an optical element (s) (eg reflector 15, see Fig. 4) and / or in a luminaire (eg downlight, spotlight, LED See Figure 3), the homogeneous light distribution / light-emitting surface achieved by the uniform equipping of the LED chips 2 is not unfavorably deformed.
According to the invention, a spotlight or a retrofit LED lamp 100 (see FIG. 3) may be provided which have at least one LED module 1 according to the invention. Under "Retrofit " Lamps are understood to be lamps which, with regard to their mechanical and electrical connections, are designed to replace existing lighting means (light bulb, halogen lamp, etc.). Thus, it may, in appearance, have substantially the shape of a conventional light bulb or halogen lamp and / or be provided with a corresponding (lamp) base 120 (eg E27 or E14) or plug (not shown). In order to adapt the supply current, the retrofit LED lamp also usually has its own driver circuit 110 which, for example, adapts the supply current to the operating conditions of the LEDs from a mains voltage supplied via the base 120. Thus, the retrofit LED lamps 100 can be like conventional ones Lamps screwed into ordinary Fas¬sungen or used and operated by means of the supplied mains current. The driver circuit 110 may be mechanically and electrically protected in a driver housing 130 as part of a housing. Furthermore, the retrofit LED lamp 100 may include a transparent cover 140 as another part of the housing, which is modeled on a glass bulb of a conventional incandescent lamp. In operation of the LED lamp 100, heat is generated by the LED module 1 and also by the driver circuit 110. This heat is usually removed via a thermally connected to the LED module 1und the driver circuit 110 heat sink 150 (as another part of the housing). In addition to the aforementioned features, the LED lamp 100 may also include other electrical, electronic and / or mechanical components, such as a reflector for targeted emission of light, a sensor for measuring and controlling the LED module 1 and other known features of a ballast and / or Emission and / or alteration of the light.
For spotlights, the geometry of the dam 8 in plan view is preferably circular, with other geometries defined by the dam 8 being possible, such as rectangular shapes, etc. The diameter of the circular dam is preferably from 17 to 28mm, more preferably from 19 to 26mm.
In the following, a method for producing an LED module 1 according to the invention will be described.
In a first step, a metallic layer 4, preferably a silver layer (or gold layer) with a thickness of about 30 to 8000 nm is applied to a support 3 (for example a printed circuit board). This can be provided with a further (protective) layer of oxides. Carrier 3 and metallic layer 4 may also consist of a base substrate made of aluminum plate with vapor deposited pure aluminum layers and optionally layers of oxides onto which a (FR4) circuit board 31 is laminated, which preferably has recesses which at least partially expose the base substrate 13 then later the LED chips 2 can be set.
In a second step, a ceramic varnish ("ink"), for example, is applied to the support 3, more precisely to the metallic layer 4 of the support 3, by means of a screen printing process. The ceramic lacquer is provided in such a way that the metallic layer 4 of the carrier 3 is at least partially, preferably completely covered, by the resulting lacquer layer 5. It is conceivable that this step is repeated several times (as often as desired) in order to increase the layer thickness of the lacquer. In a simple printing process, the Lack¬ layer 5, for example, a thickness of about 15 to 20pm. By multiple printing, the thickness of the varnish layer 5 can be increased to a range of, for example, 40 to 50pm or more. By increasing the paint thickness, the reflectance of the Lack¬ layer 5 increases from, for example, 80% at 18pm to about 95% at 40 to 50pm. This degree of reflection applies in each case when measuring the paint layer on a black background.
The light passing through the lacquer layer 5 of the LED chip 2 can be reflected back due to the underlying metallic layer or silver layer 4. This double-reflective design has the advantage that, for example, in the case of an oxidative blackening of the silver layer 4, a substantial proportion of the Light is reflected by the overlying paint layer 5, which increases the efficiency of the module 1. Also, the resist layer 5 can serve as oxidation protection for the metallic layer 4, so that its reflection properties are substantially maintained during the life of the module 1.
The lacquer layer 5 applied to the metallic layer 4 is particularly preferably provided such that the metallic layer 4 is partially covered by the lacquer layer 5. Partially means in this context that the metallic layer 4 is not completely covered by the lacquer layer 5, but remain free places 6, in the later used the LED chips 2 and thus applied to the metallic layer 4. In a construction with a printed circuit board laminated to a coated base substrate (FR4), the recesses thereof or the areas of the coated base substrate exposed thereby preferably at least partially coincide with the recesses 6 into which the LED chips 2 preferentially rest on the coated base substrate and thus can be applied to the metallic layer 4.
In a third step, at least one or more LED chip (s) 2 (for example, four LED chips 2 in FIG. 1) are / is then placed on the metallic layer 4 in the reliefs 6 of the lacquer layer 5; So applied, and contacted electrically. Preferably, the LED chip 2 is attached according to the chip-on-board (COB) technology or as SMD LED. The bonding wires 12 are, for example. shown in Figure 2A-C. However, it is also conceivable that the LED chips 2 are placed on the lacquer layer 5, should this cover the entire metallic layer 4. Also, the LED chip 2 can be provided directly on the support 3. In this case, the LED chip 2 is preferably first applied to the carrier 3, so that it is laterally surrounded by the metallic layer 4 and the lacquer layer 5 after the coating; in Abstrahlrich¬ direction (ie in particular on its top 21) of the LED chip 2 is then of course not coated.
The LED chips 2 are preferably glued, particularly preferably glued to the metallic layer 4 or base substrate 13. For this purpose, it is advantageously possible to use a reflective, preferably white, adhesive. The dosage of the adhesive should, according to a preferred embodiment, be chosen such that when the LED chip 2 is placed on the adhesive, for example in the clearances 6 of the lacquer layer 5, it is laterally displaced so as to leave a possibly remaining gap 7 between the side wall 20 of the LED chip 2 and one of the LED chip 2 facing the edge boundary 50 of the ceramic lacquer layer 5 / the recess 6 (possibly also the metallic layer 4) at least partially or completely fills, so that the metallic layer 4 (and possibly also the laminated (FR4) circuit board) is completely covered in the latter case. Thus, a double-reflective design can also be achieved in LED chip 2 near areas and over the entire area of the module 1 or carrier 3.
In an optional fourth step, a dam 8 is at least partially applied or provided on the metallic layer 4 (possibly including any possibly laminated (FR4) printed circuit board present) and / or the lacquer layer 5 such that the Dam 8 denoder or the LED chips 2 laterally surrounds. The dam 8 is preferably formed as an annular dam (eg. Torus). Preferably, the dam 8 is made up of a liquid polymer or resin or a polymer mixture around the LED chips 2 on the metallic layer 4. Alternatively, the dam 8 may also extend at least partially over the preferably imprinted ceramic lacquer layer 5.
It should be noted that " ring " or "annular" in connection with the present description and the claims, does not represent any restriction with regard to the contour of the wall of the dam 8; z. For example, the ring does not necessarily have a circular shape, but may be e.g. have the shape of a square, an oval, an ellipse or a rectangle etc. The circularity is preferred because of its proximity to well-designed reflectors because the plurality of LEDs preferably appear as a single round optical element. A square shape is preferred due to the simpler arrangement ferti¬ technology.
Preferably, a flat plate is used as the carrier 3 without depressions, since the reflecting effect of walls of a depression can be achieved by the dam walls.
Dispening techniques for resins and silicones and the like are known as such from the prior art. The cross-sectional shape of the dam 8 may be determined by the diameter of the dispensing needle used, the flow characteristics of the liquid dam material, and the
For example, due to the dispensing technique, the cross-section of the dam 8 may have a tapering shape toward the summit of the dam 8. As a result, the inner surface of the dam 8 is sloped and preferably steeper at its upper part may be advantageous for purposes of reflection.
The dam 8 can also be produced by means of overmolding in addition to dispensing. If it can then no longer be used to protect the wirebonds, it will increase the emitting surface slightly. Alternatively, the dam 8 may also be provided as a prefabricated element, which is preferably made of a polymer, resin, ceramic, metal or other plastic, for example as an injection molded part.
In an optional fifth step of the production process following the fourth step, the space surrounding the dam 8 is filled with a filling material. In other words, the volume bounded by the inner walls of the inherently stable ring 8 is filled with a liquid filling material. As can be seen in FIG. 1, this central filling 9 is preferably produced in such a way that the upper side of the filling 9 is flush with the upper side of the walls of the dam 8. Particularly preferably, the central filling 9 is provided so as to cover the top of the LED chip 2 entirely. The central filling 9 also covers the space between the LED chip 2 and the walls of the dam 8 and contacts the lacquer layer 5 and, via cladding 6 in the lacquer, the metallic layer (silver layer or high-purity aluminum layer or the like) 4 or used to apply the LED chips 2 Glue. Due to the preferred filling with a liquid polymer or resin, the top of the central filling 9 will preferably be flat.
Preferably, therefore, liquid uncured polymer or resin (e.g., silicone) is filled in a cavity made of an inherently stable dam 8 of uncured polymer / resin. The materials of the dam 8 and the central filling 9 are hereby preferably similar or the same, so that they are preferably chemically identical. The chemical identity should be such that the material used for the dam 8 and central filling 9 can each be cured by the use of the same curing mechanism, preferably to provide a chemical and / or physical bond between the two materials across their interface away.
With regard to optical and mechanical characteristics, the materials of the dam 8 and the central filling 9 may be different; thus, the material of the dam 8 which is preferably identical to the material of the central filling can also be provided with different additives than the material of the central filling 9. For colored LED modules (e.g., blue, green, amber and red), it is not necessary to add additional fillers to the polymer or resin for the central filling 9. On the other hand, for white color conversion LED modules, 9 color conversion particles can be added to the filler of the central filling 9. The type and amount of the color conversion particles depend on the desired color temperature of the LED module 1, which are known as such from the prior art. Preferably, there is an increasing concentration gradient of the color conversion particles from top to bottom, which e.g. B. can be achieved by dropping the Farb¬konversionspartikel on the bottom of the filling 9.
If the dam 8 and the central filling 9 made of a liquid polymer or resin or a polymer mixture, it is preferably after the application or. Filling hardened. The step of applying the dam 8 as well as filling the dam 8 with the filling material thus preferably further comprises hardening the dam 8, preferably made of a liquid polymer / polymer mixture, or curing the filler preferably made of a liquid polymer / polymer mixture the central filling 9. The hardening of the dam 8 and the hardening of the central filling 9 can be carried out after the respective steps for providing the dam 8 and the central filling 9, ie independently of each other.
In a particularly preferred embodiment, the liquid polymers (mi-loop), i. the polymers or resins of the central filling 9 and the dam 8, hardened by a single curing process and thus preferably chemically bonded together at their interface. This manufacturing process is based on a comparatively high mechanical stability of the material of the wall of the dam 8 in the non-hardened 'liquid' state. In turn, in order to achieve this mechanical stability in a liquid state, additional filling materials, such as silicones, may be added to the material of the dam 8. The co-curing of the dam 8 and the central filling 9 consequently has the advantage that a polymerization between the dam material and the matrix material of the central filling 9 can take place.
Both for the production of the dam 8 and for the filling 9, a standardized computer-controlled delivery device can be used.
The invention is not limited to the embodiments described above, as long as it is encompassed by the subject matter of the following claims.
Thus, it is conceivable that first the LED chips 2 are applied to the carrier 3 and then the carrier 3 (except for the LED chips 2) is coated with the metallic layer 4 and subsequently the lacquer layer 5 is applied. The only decisive factor is that the combination of lacquer layer 5 and metallic layer 4 forms a double-reflective effect for the light emitted by the LED chip 2, so that the light of the LED chip 2 passing through the lacquer layer 5 due to the underlying metal (Sil ber) layer 4 is reflected back and thus the efficiency of the module 1 is increased.
The module 1 may, for example, generally be embodied as an electronic or optoelectronic module and have other electronic or optoelectronic components instead of an LED chip.
For example, the module 1 may be embodied as a light-erasable memory device, such as an EEPROM. The invention can also be used for photosensitive sensors, such as RGB sensors, infrared sensors or CCD sensors. Infrared emitters as well as light-sensitive light sensing devices are also fields of application, particularly where the sensor is present as a bare chip in COB or lead frame technology.
The coating can, according to the present invention, also be used in connection with light guides and optical fibers. An optical fiber to which light is to be transmitted from the light source 2 is preferably spaced apart from and in front of the light source 2 and extends, for example, away from the light source 2 from the filler material 9. Furthermore, the module 1 can be provided with a mechanical fastening for the optical fibers. Such an arrangement provides improved light transmission from the light source 2 to the optical fiber.
LIST OF REFERENCE NUMBER 1 LED module 2 LED chip 3 carrier 4 metallic layer 5 lacquer layer 50 edge boundary of the lacquer layer 6 cut 7 gap 8 dam 9 central filling 10 areas uncovered by the lacquer layer 11 bonding pad 12 bonding wire 13 base substrate 14 recess 15 reflector 16 additional Substrate 17 Carrier surface under the dam 18 The surface occupied by the LED chips 31 Circuit board 32 Strand of the LED chips 20 Sidewall of the LED chip 21 Top of the LED chip 80 Surrounding the dam 90 Spatter particles
权利要求:
Claims (22)
[1]
Claims 1. LED module (1), comprising: - a support (3), wherein on the support (3) a metallic layer (4) is applied, - at least one LED chip (2), and - a dam ( 8), wherein the metallic layer (4) partially covers the surface (17) of the carrier (3, 31) lying below the dam.
[2]
2. LED module (1) according to claim 1, further comprising a lacquer layer (5), wherein the lacquer layer (5) is partially applied to the metallic layer (4).
[3]
3. LED module (1) according to claim 1 or 2, wherein the LED chip (2) on the metallic layer (4) and / or on the lacquer layer (5) and / or directly on the carrier (3, 13) up ¬bracht is.
[4]
4. LED module (1) according to one of the preceding claims, wherein the lacquer layer (5) has an average thickness of 10 to 100pm, preferably an average thickness of 20 to 50pm.
[5]
5. LED module (1) according to one of the preceding claims, wherein the metallic layer (4) has a thickness of 30 to 8000 nm, preferably a thickness of 100 to 300 nm and 2000 to 6000 nm.
[6]
6. LED module (1) according to one of the preceding claims, wherein the lacquer layer (5) is positioned on the metallic layer (4) and completely covers the space (80) surrounding the dam (8) and / or up to the surface (17). of the carrier (3) under the dam (8) protrudes and the carrier (3) at least one of the lacquer layer (5) uncovered area (10) shows.
[7]
7. LED module (1) according to one of the preceding claims, wherein the carrier (3) includes a printed circuit board 31 and / or a base substrates 13.
[8]
8. LED module (1) according to one of the preceding claims, further comprising a reflector and an additional substrate (16).
[9]
9. LED module (1) according to one of the preceding claims, - wherein the dam (8) laterally surrounding the LED chip (2) or a plurality of LED chips (2) and the LED chips (2) preferably in height surmounted at least partially on the metallic layer (4) and / or the lacquer layer (5), and preferably also a central filling (9) of a matrix material, preferably a transparent and preferably liquid and temperature-curable polymer or a polymer mixture the central filling (9) preferably completely fills the space (80) surrounding the dam (9) so that the upper side of the LED chip (2) is coated.
[10]
10. LED module (1) according to claim 9, wherein the central filling (9) color conversion particles and / or scattering particles.
[11]
The LED module (1) according to claim 9 or 10, wherein the material of the dam (8) and the material of the central filling (9) are of the same class of materials, preferably silicone-based, more preferably the dam (8) and the central one Filling (9) made of a polymer or resin having the same structure, thereby making it possible to cure the dam (8) and the filling (9) both in a curing step.
[12]
12. LED module (1) according to one of claims 9 to 11, wherein the material of the dam (8) fillers in the form of particulate material such. Has silica.
[13]
13. LED module (1) according to one of claims 9 to 12, wherein at least the inner wall of the dam (8) is light-reflecting or scattering, and / or the dam-reflecting o-the light-scattering particles, preferably white pigments.
[14]
14. LED module (1) according to any one of claims 9 to 13, wherein the dam (8) is a vorgefertig¬tes element, preferably of a polymer, ceramic, metal or plastic.
[15]
15. LED module (1) according to one of claims 9 to 14, wherein the dam (8) has a height of 0.1 to 3mm, preferably 0.25 to 2mm, more preferably 0.5mm, and wherein the diameter of the cross-sectional area of the Dam (8), ie the average thickness of the dam (8) or the maximum distance between the inner wall and the outer wall of the dam (8), preferably substantially equal to the height of the dam (8).
[16]
16. LED module (1) according to one of claims 9 to 15, wherein the dam (8) seen in the plan view, ie perpendicular to the carrier, a circular, ellipsoidal, oval or polygonal shape, for example a rectangular or square or polygonal Shape, has.
[17]
17. Spotlight or retrofit LED lamp comprising at least one LED module (1) according to one of the preceding claims, preferably further comprising a housing (130, 140, 150), a reflector (15), a driver circuit (110), a sensor system, a Kühlkör ¬per (150) and / or a lamp base (120).
[18]
18. A method for producing an LED module (1), comprising the following steps: - applying a metallic layer (4) on a support (3), - applying a ceramic paint on the support (3) such that the metallic layer ( 4) of the carrier (3) is partially covered by a lacquer layer (5), - placing at least one LED chip (2) on the carrier (3, 13), the metallic layer (4) or the lacquer layer (5).
[19]
19. The method according to claim 18, further comprising the steps: - applying a dam (8) at least partially on the metallic layer (4) and / or the lacquer layer (5) such that the dam (8) the at least one LED chip (2) surrounds laterally, - filling the space (80) surrounding the dam (8) with a filling material, whereby the resulting central filling (9) is preferably provided such that it covers the upper side of the LED chip (2) coated, wherein the dam (8) and the central filling (9) are preferably made of a liquid polymer or a polymer mixture which is cured after the application or filling, and wherein the hardening of the dam (8 ) and the hardening of the central filling (9) after the respective steps for providing the dam (8) and the central filling (8), or in a single step after the provision of the dam (8) and the central filling (9 ), in the latter case preferably forming a chemically and / or physically bonded interface between the dam (8) and the central filling (9).
[20]
20. The method according to claim 18 or 19, wherein a plurality of steps are provided for applying the Kera¬mischen paint on the metallic layer (4), so that the layer thickness of the paint layer (5) is increased.
[21]
21. The method according to any one of claims 18 to 20, wherein the ceramic paint is printed on the metallic layer (4), preferably by means of a screen printing method or a dispensing method.
[22]
22. The method according to any one of claims 18 to 21, wherein the ceramic lacquer is applied to the metallic layer (4) such that it is only partially covered by the lacquer layer (5) and has recesses (6), wherein the LED Chip (2) is glued preferably in the free places (6) of the lacquer layer (5) on the metallic layer, preferably with a reflective, particularly preferably white adhesive, and wherein the dosage of the adhesive is preferably selected such that during Placing the LED chip (2) on the adhesive in the recesses (6) of the adhesive is laterally displaced such that it the remaining gap (7) between the side wall (20) of the LED chip (2) and the LED chip ( 2) facing edge boundary (50) of the ceramic lacquer layer (5) at least partially or completely, so that the metallic layer (4) is completely covered in the latter case. For this 8 sheets of drawings
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同族专利:
公开号 | 公开日
EP2815439B1|2020-04-22|
DE102012223039A1|2013-08-14|
CN104205378B|2018-02-02|
EP2815439A1|2014-12-24|
DE202012011948U1|2014-03-20|
US20150016107A1|2015-01-15|
CN104205378A|2014-12-10|
US10586901B2|2020-03-10|
WO2013120760A1|2013-08-22|
引用文献:
公开号 | 申请日 | 公开日 | 申请人 | 专利标题
JP2003051620A|2001-08-08|2003-02-21|Rohm Co Ltd|Semiconductor light-emitting device|
US20110001156A1|2009-07-01|2011-01-06|Makoto Matsuda|Light emitting device and method for manufacturing same|
US20110180817A1|2010-01-22|2011-07-28|Sharp Kabushiki Kaisha|Light emitting device|DE102016202801A1|2016-02-24|2017-08-24|Tridonic Jennersdorf Gmbh|LED module with insulating dam|DE10024336A1|2000-05-17|2001-11-22|Heidenhain Gmbh Dr Johannes|Component arrangement on bearer substrate has two barrier layers of identical material joined in contact region with ratio of barrier height and width between 0.5 and one|
DE10245946C1|2002-09-30|2003-10-23|Osram Opto Semiconductors Gmbh|Production of a light source module comprises arranging light emitting diodes in a recess of a casting frame, casting the recesses and removing the casting frame|
US7095053B2|2003-05-05|2006-08-22|Lamina Ceramics, Inc.|Light emitting diodes packaged for high temperature operation|
US20100002455A1|2005-11-24|2010-01-07|Yoichi Matsuoka|Electronic Component Mounting Board and Method for Manufacturing Such Board|
TW200802957A|2006-06-16|2008-01-01|Gigno Technology Co Ltd|Light emitting diode module|
EP1914809A1|2006-10-20|2008-04-23|Tridonic Optoelectronics GmbH|Cover for optoelectronic components|
CA2687532C|2007-05-18|2018-07-17|Denki Kagaku Kogyo Kabushiki Kaisha|Metal base circuit board|
TW200905905A|2007-07-18|2009-02-01|Lee Ko Hsin|Method of manufacture of light emitting diode|
JP5345363B2|2008-06-24|2013-11-20|シャープ株式会社|Light emitting device|
JP2010199547A|2009-01-30|2010-09-09|Nichia Corp|Light emitting device and method of manufacturing same|
US20100193825A1|2009-02-05|2010-08-05|Chih-Wen Yang|Light-emitting diode package and method for fabricating the same|
JP5684700B2|2009-03-31|2015-03-18|東芝ライテック株式会社|Light emitting device and lighting device|
JP5499325B2|2009-06-01|2014-05-21|東芝ライテック株式会社|Light emitting module and lighting device|
US9048404B2|2009-07-06|2015-06-02|Zhuo Sun|Thin flat solid state light source module|
TWI501432B|2009-07-17|2015-09-21|Denki Kagaku Kogyo Kk|Led chip bonding body, led package and method for manufacturing a led package|
US20110121326A1|2009-11-26|2011-05-26|Dsem Holdings Sdn. Bhd.|Submount Having Reflective Cu-Ni-Ag Pads Formed Using Electroless Deposition|
JP2011151248A|2010-01-22|2011-08-04|Seiwa Electric Mfg Co Ltd|Light emitting device, and method of manufacturing the same|
JPWO2011092945A1|2010-01-28|2013-05-30|旭硝子株式会社|Light-emitting element mounting substrate, manufacturing method thereof, and light-emitting device|
US20110186874A1|2010-02-03|2011-08-04|Soraa, Inc.|White Light Apparatus and Method|
DE202010017532U1|2010-03-16|2012-01-19|Eppsteinfoils Gmbh & Co.Kg|Foil system for LED applications|
WO2011125346A1|2010-04-07|2011-10-13|シャープ株式会社|Light emitting device and method for manufacturing same|
US9012938B2|2010-04-09|2015-04-21|Cree, Inc.|High reflective substrate of light emitting devices with improved light output|
DE102010027748A1|2010-04-14|2011-10-20|Osram Opto Semiconductors Gmbh|Optoelectronic component e.g. LED, has bonding material formed with high reflectivity in range of maximum frequency and provided between semiconductor chip and lead frame, where chip is secured over bonding material on lead frame|
EP2378576A2|2010-04-15|2011-10-19|Samsung LED Co., Ltd.|Light emitting diode package, lighting apparatus having the same, and method for manufacturing light emitting diode package|
JP2012033853A|2010-04-28|2012-02-16|Fujifilm Corp|Insulation light reflection substrate|
TWI472067B|2010-04-28|2015-02-01|Lg Innotek Co Ltd|Optical package and method of manufacturing the same|
JP5429038B2|2010-05-14|2014-02-26|旭硝子株式会社|Light emitting element mounting substrate and light emitting device|
JP2012015330A|2010-06-30|2012-01-19|Toshiba Lighting & Technology Corp|Light emitting module and lighting system|
JP2012033855A|2010-07-01|2012-02-16|Hitachi Cable Ltd|Led module, led package, wiring board, and manufacturing method therefor|
JP5486431B2|2010-07-27|2014-05-07|日東電工株式会社|LIGHT EMITTING DEVICE COMPONENT, LIGHT EMITTING DEVICE, AND ITS MANUFACTURING METHOD|
US9461023B2|2011-10-28|2016-10-04|Bridgelux, Inc.|Jetting a highly reflective layer onto an LED assembly|DE102012110774A1|2012-11-09|2014-05-15|Osram Opto Semiconductors Gmbh|Optoelectronic semiconductor device|
JP6249348B2|2013-11-22|2017-12-20|東芝ライテック株式会社|Light emitting device|
CN104835809A|2014-02-10|2015-08-12|漳州灿坤实业有限公司|LED light-emitting device|
US10453825B2|2014-11-11|2019-10-22|Cree, Inc.|Light emitting diodecomponents and methods|
DE102015112969A1|2015-08-06|2017-02-09|Osram Opto Semiconductors Gmbh|Method for producing an optoelectronic component|
CN105623658B|2016-01-29|2017-04-12|江苏博睿光电有限公司|Nitrogen oxide fluorescent powder and preparation method thereof, nitrogen oxide light emitter, and light emitting device|
DE102016103819A1|2016-03-03|2017-09-07|Heraeus Deutschland GmbH & Co. KG|Connection carrier, optoelectronic component and method for producing a connection carrier or an optoelectronic component|
EP3451394B1|2016-04-26|2021-01-06|Citizen Electronics Co., Ltd.|Light-emitting device|
JP6683000B2|2016-05-09|2020-04-15|日亜化学工業株式会社|Light emitting device and manufacturing method thereof|
EP3467887B1|2016-05-24|2022-01-26|Citizen Electronics Co., Ltd.|Led lighting device and method for manufacturing led lighting device|
DE102016112293A1|2016-07-05|2018-01-11|Osram Opto Semiconductors Gmbh|METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT|
DE102016116298A1|2016-09-01|2018-03-01|Osram Opto Semiconductors Gmbh|Arrangement with carrier and optoelectronic component|
DE102016219116A1|2016-09-30|2018-04-05|Robert Bosch Gmbh|Method for producing an electronic assembly and electronic assembly, in particular for a transmission control module|
US10957736B2|2018-03-12|2021-03-23|Cree, Inc.|Light emitting diodecomponents and methods|
KR20190138045A|2018-06-04|2019-12-12|삼성전자주식회사|White light emitting diode module and lighting apparatus|
JP6923808B2|2018-06-22|2021-08-25|日亜化学工業株式会社|Light emitting device and its manufacturing method|
US11189764B2|2018-11-22|2021-11-30|Nichia Corporation|Light-emitting device and manufacturing method thereof|
WO2021117400A1|2019-12-11|2021-06-17|ヌヴォトンテクノロジージャパン株式会社|Semiconductor device|
法律状态:
2017-12-15| MM01| Lapse because of not paying annual fees|Effective date: 20170430 |
优先权:
申请号 | 申请日 | 专利标题
DE102012202089|2012-02-13|DE202012011948.6U| DE202012011948U1|2012-02-13|2012-12-13|LED module with Flächenverguß|
DE201210223039| DE102012223039A1|2012-02-13|2012-12-13|Surface mount device LED module e.g. electrically EPROM for fastening on circuit board in spotlight or retrofit LED lamp, has metallic layer applied on carrier with high reflection degree, and oxide layer provided over metallic layer|
EP13154408.2A| EP2626918B8|2012-02-13|2013-02-07|LED module with highly reflective support and method of manufacturing LED module with highly reflective support|
PCT/EP2013/052435| WO2013120760A1|2012-02-13|2013-02-07|Led module having a highly reflective carrier|
US14/378,581| US10586901B2|2012-02-13|2013-02-07|LED module having a highly reflective carrier|
EP13705413.6A| EP2815439B1|2012-02-13|2013-02-07|LED module with highly reflective support and method of manufacturing LED module with highly reflective support|
CN201380018764.7A| CN104205378B|2012-02-13|2013-02-07|LED module with high reflector carrier|
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